Oxygen Nitrogen Mixture Effect on Aluminum Nitride Synthesis by Reactive Ion Plasma Deposition
In the work we investigate synthesis of aluminum nitride films using reactive ion plasma deposition in oxygen/nitrogen gas mixture for application as optical elements for power semiconductor lasers. The experimental refractive index of synthesized AlNO films is dependent on oxygen composition and is...
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| Veröffentlicht in: | Semiconductors (Woodbury, N.Y.) N.Y.), 2018-02, Vol.52 (2), p.184-188 |
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| container_title | Semiconductors (Woodbury, N.Y.) |
| container_volume | 52 |
| creator | Lubyanskiy, Ya. V. Bondarev, A. D. Soshnikov, I. P. Bert, N. A. Zolotarev, V. V. Kirilenko, D. A. Kotlyar, K. P. Pikhtin, N. A. Tarasov, I. S. |
| description | In the work we investigate synthesis of aluminum nitride films using reactive ion plasma deposition in oxygen/nitrogen gas mixture for application as optical elements for power semiconductor lasers. The experimental refractive index of synthesized AlNO films is dependent on oxygen composition and is decreasing in diapason from 1.76 to 2.035 at elevation of the oxygen fraction.It is shown that the AlN films synthesized by pure nitrogen plasma are polycrystalline and textured. The oxygen presence in discharging gas results to growth of amorphous phase of the AlNO film. |
| doi_str_mv | 10.1134/S1063782618020070 |
| format | Article |
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V. ; Bondarev, A. D. ; Soshnikov, I. P. ; Bert, N. A. ; Zolotarev, V. V. ; Kirilenko, D. A. ; Kotlyar, K. P. ; Pikhtin, N. A. ; Tarasov, I. S.</creator><creatorcontrib>Lubyanskiy, Ya. V. ; Bondarev, A. D. ; Soshnikov, I. P. ; Bert, N. A. ; Zolotarev, V. V. ; Kirilenko, D. A. ; Kotlyar, K. P. ; Pikhtin, N. A. ; Tarasov, I. S.</creatorcontrib><description>In the work we investigate synthesis of aluminum nitride films using reactive ion plasma deposition in oxygen/nitrogen gas mixture for application as optical elements for power semiconductor lasers. The experimental refractive index of synthesized AlNO films is dependent on oxygen composition and is decreasing in diapason from 1.76 to 2.035 at elevation of the oxygen fraction.It is shown that the AlN films synthesized by pure nitrogen plasma are polycrystalline and textured. The oxygen presence in discharging gas results to growth of amorphous phase of the AlNO film.</description><identifier>ISSN: 1063-7826</identifier><identifier>EISSN: 1090-6479</identifier><identifier>DOI: 10.1134/S1063782618020070</identifier><language>eng</language><publisher>Moscow: Pleiades Publishing</publisher><subject>Aluminum ; Aluminum compounds ; Aluminum nitride ; Chemical synthesis ; Electronics industry ; Gallium arsenide ; Gallium nitrate ; Interfaces ; Lasers ; Magnetic Materials ; Magnetism ; Nitrides ; Nitrogen ; Nitrogen plasma ; Optical components ; Oxygen ; Physics ; Physics and Astronomy ; Plasma deposition ; Refractivity ; Semiconductor lasers ; Silicon ; Surfaces ; Thin Films</subject><ispartof>Semiconductors (Woodbury, N.Y.), 2018-02, Vol.52 (2), p.184-188</ispartof><rights>Pleiades Publishing, Ltd. 2018</rights><rights>COPYRIGHT 2018 Springer</rights><rights>Copyright Springer Science & Business Media 2018</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c355t-e68aa8fb7d9d396c3c78c4ffebca5537ff6354cf3922b3e1b782efc4fc04d2793</citedby><cites>FETCH-LOGICAL-c355t-e68aa8fb7d9d396c3c78c4ffebca5537ff6354cf3922b3e1b782efc4fc04d2793</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://link.springer.com/content/pdf/10.1134/S1063782618020070$$EPDF$$P50$$Gspringer$$H</linktopdf><linktohtml>$$Uhttps://link.springer.com/10.1134/S1063782618020070$$EHTML$$P50$$Gspringer$$H</linktohtml><link.rule.ids>314,780,784,27924,27925,41488,42557,51319</link.rule.ids></links><search><creatorcontrib>Lubyanskiy, Ya. V.</creatorcontrib><creatorcontrib>Bondarev, A. D.</creatorcontrib><creatorcontrib>Soshnikov, I. P.</creatorcontrib><creatorcontrib>Bert, N. A.</creatorcontrib><creatorcontrib>Zolotarev, V. V.</creatorcontrib><creatorcontrib>Kirilenko, D. A.</creatorcontrib><creatorcontrib>Kotlyar, K. P.</creatorcontrib><creatorcontrib>Pikhtin, N. A.</creatorcontrib><creatorcontrib>Tarasov, I. S.</creatorcontrib><title>Oxygen Nitrogen Mixture Effect on Aluminum Nitride Synthesis by Reactive Ion Plasma Deposition</title><title>Semiconductors (Woodbury, N.Y.)</title><addtitle>Semiconductors</addtitle><description>In the work we investigate synthesis of aluminum nitride films using reactive ion plasma deposition in oxygen/nitrogen gas mixture for application as optical elements for power semiconductor lasers. The experimental refractive index of synthesized AlNO films is dependent on oxygen composition and is decreasing in diapason from 1.76 to 2.035 at elevation of the oxygen fraction.It is shown that the AlN films synthesized by pure nitrogen plasma are polycrystalline and textured. The oxygen presence in discharging gas results to growth of amorphous phase of the AlNO film.</description><subject>Aluminum</subject><subject>Aluminum compounds</subject><subject>Aluminum nitride</subject><subject>Chemical synthesis</subject><subject>Electronics industry</subject><subject>Gallium arsenide</subject><subject>Gallium nitrate</subject><subject>Interfaces</subject><subject>Lasers</subject><subject>Magnetic Materials</subject><subject>Magnetism</subject><subject>Nitrides</subject><subject>Nitrogen</subject><subject>Nitrogen plasma</subject><subject>Optical components</subject><subject>Oxygen</subject><subject>Physics</subject><subject>Physics and Astronomy</subject><subject>Plasma deposition</subject><subject>Refractivity</subject><subject>Semiconductor lasers</subject><subject>Silicon</subject><subject>Surfaces</subject><subject>Thin Films</subject><issn>1063-7826</issn><issn>1090-6479</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2018</creationdate><recordtype>article</recordtype><recordid>eNp1kEtPAyEQgDdGE7X6A7yReF6FZZeFY1OrNqmP-Li6YdmhYrpQgTX230utBxNj5jAT-L5hmCw7IfiMEFqePxLMaM0LRjguMK7xTnZAsMA5K2uxu6kZzTf3-9lhCG8YE8Kr8iB7uftcL8CiWxO92xQ35jMOHtBUa1AROYvGy6E3dui_GdMBelzb-ArBBNSu0QNIFc0HoFlC75cy9BJdwMoFE42zR9melssAxz95lD1fTp8m1_n87mo2Gc9zRasq5sC4lFy3dSc6KpiiquaqTBO0SlYVrbVmtCqVpqIoWgqkTT8BnQiFy66oBR1lp9u-K-_eBwixeXODt-nJhghRUs4FKxJ1tqUWcgmNsdpFL1WKDnqjnAVt0vm4KjgRNSM0CWQrKO9C8KCblTe99OuG4Gaz9-bP3pNTbJ2QWLsA_2uUf6UvezSE8A</recordid><startdate>20180201</startdate><enddate>20180201</enddate><creator>Lubyanskiy, Ya. 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V.</creatorcontrib><creatorcontrib>Bondarev, A. D.</creatorcontrib><creatorcontrib>Soshnikov, I. P.</creatorcontrib><creatorcontrib>Bert, N. A.</creatorcontrib><creatorcontrib>Zolotarev, V. V.</creatorcontrib><creatorcontrib>Kirilenko, D. A.</creatorcontrib><creatorcontrib>Kotlyar, K. P.</creatorcontrib><creatorcontrib>Pikhtin, N. A.</creatorcontrib><creatorcontrib>Tarasov, I. S.</creatorcontrib><collection>CrossRef</collection><jtitle>Semiconductors (Woodbury, N.Y.)</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Lubyanskiy, Ya. V.</au><au>Bondarev, A. D.</au><au>Soshnikov, I. P.</au><au>Bert, N. A.</au><au>Zolotarev, V. V.</au><au>Kirilenko, D. A.</au><au>Kotlyar, K. P.</au><au>Pikhtin, N. A.</au><au>Tarasov, I. S.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Oxygen Nitrogen Mixture Effect on Aluminum Nitride Synthesis by Reactive Ion Plasma Deposition</atitle><jtitle>Semiconductors (Woodbury, N.Y.)</jtitle><stitle>Semiconductors</stitle><date>2018-02-01</date><risdate>2018</risdate><volume>52</volume><issue>2</issue><spage>184</spage><epage>188</epage><pages>184-188</pages><issn>1063-7826</issn><eissn>1090-6479</eissn><abstract>In the work we investigate synthesis of aluminum nitride films using reactive ion plasma deposition in oxygen/nitrogen gas mixture for application as optical elements for power semiconductor lasers. The experimental refractive index of synthesized AlNO films is dependent on oxygen composition and is decreasing in diapason from 1.76 to 2.035 at elevation of the oxygen fraction.It is shown that the AlN films synthesized by pure nitrogen plasma are polycrystalline and textured. 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| subjects | Aluminum Aluminum compounds Aluminum nitride Chemical synthesis Electronics industry Gallium arsenide Gallium nitrate Interfaces Lasers Magnetic Materials Magnetism Nitrides Nitrogen Nitrogen plasma Optical components Oxygen Physics Physics and Astronomy Plasma deposition Refractivity Semiconductor lasers Silicon Surfaces Thin Films |
| title | Oxygen Nitrogen Mixture Effect on Aluminum Nitride Synthesis by Reactive Ion Plasma Deposition |
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