Thermodynamic simulation and experimental investigation of reactive chemical vapor deposition in the Ta–C–Si–O–F system

Reactive deposition processes of tantalum carbide are studied experimentally and theoretically in the Ta–C–Si–O–F system. It is shown that Sio 2 substantially affects the carbide formation process. This is expressed in a decreased efficiency of tantalum transfer from the source zone to the crystalli...

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Veröffentlicht in:	Journal of structural chemistry 2017-12, Vol.58 (8), p.1477-1483
Hauptverfasser:	Lozanov, V. V., Baklanova, N. I., Piryazev, D. A.
Format:	Artikel
Sprache:	eng
Schlagworte:	Atomic Atomic/Molecular Structure and Spectra Chemical vapor deposition Chemistry Chemistry and Materials Science Crystallization Inorganic Chemistry Molecular Optical and Plasma Physics Physical Chemistry Solid State Physics Tantalum Tantalum carbide
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