Self‐Compensation in Transparent Conducting F‐Doped SnO2

The factors limiting the conductivity of fluorine‐doped tin dioxide (FTO) produced via atmospheric pressure chemical vapor deposition are investigated. Modeling of the transport properties indicates that the measured Hall effect mobilities are far below the theoretical ionized impurity scattering li...

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Veröffentlicht in:	Advanced functional materials 2018-01, Vol.28 (4), p.n/a
Hauptverfasser:	Swallow, Jack E. N., Williamson, Benjamin A. D., Whittles, Thomas J., Birkett, Max, Featherstone, Thomas J., Peng, Nianhua, Abbott, Alex, Farnworth, Mark, Cheetham, Kieran J., Warren, Paul, Scanlon, David O., Dhanak, Vin R., Veal, Tim D.
Format:	Artikel
Sprache:	eng
Schlagworte:	Atmospheric models carrier transport Chemical vapor deposition Compensation Defects Density functional theory Electromagnetism Fluorine fluorine‐doped stannic oxide fluorine‐doped tin dioxide fluorine‐doped tin oxide Hall effect Impurities Interstitials Mass spectrometry Materials science Photoelectric emission Photoelectron spectroscopy Quantitative analysis Secondary ion mass spectrometry Self compensation Tin dioxide Transport properties
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