Angular Effects on Single-Event Mechanisms in Bulk FinFET Technologies
Angular single-event (SE) mechanisms and experimental upset data for 14-/16-nm bulk fin field-effect transistor (FinFET) technologies are presented and analyzed. The discrete structure of FinFETs introduces unique geometrical and orientation dependences for angular SE mechanisms and SE upset (SEU) r...
Gespeichert in:
| Veröffentlicht in: | IEEE transactions on nuclear science 2018-01, Vol.65 (1), p.223-230 |
|---|---|
| Hauptverfasser: | , , , , , , , , , , , , |
| Format: | Artikel |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext bestellen |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | 230 |
|---|---|
| container_issue | 1 |
| container_start_page | 223 |
| container_title | IEEE transactions on nuclear science |
| container_volume | 65 |
| creator | Nsengiyumva, Patrick Massengill, Lloyd W. Kauppila, Jeffrey S. Maharrey, Jeffrey A. Harrington, Rachel C. Haeffner, Timothy D. Ball, Dennis R. Alles, Michael L. Bhuva, Bharat L. Holman, W. Timothy Zhang, En Xia Rowe, Jason D. Sternberg, Andrew L. |
| description | Angular single-event (SE) mechanisms and experimental upset data for 14-/16-nm bulk fin field-effect transistor (FinFET) technologies are presented and analyzed. The discrete structure of FinFETs introduces unique geometrical and orientation dependences for angular SE mechanisms and SE upset (SEU) responses of FinFET circuits. Geometric analyses and 3-D technology computer-aided design results effectively explain the angular mechanisms behind experimentally observed SE crosssectional responses. Results show that angular SEU crosssectional characteristics can be attributed to the proportional contributions of charge deposition regions in the fin structure and the subfin bulk substrate. |
| doi_str_mv | 10.1109/TNS.2017.2775234 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_RIE</sourceid><recordid>TN_cdi_proquest_journals_1988729104</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>8116674</ieee_id><sourcerecordid>1988729104</sourcerecordid><originalsourceid>FETCH-LOGICAL-c291t-b6a091468a1345f5a90e3a954869850738ca60b94edbc62e9011414fcc362f333</originalsourceid><addsrcrecordid>eNo9kE1LAzEQhoMoWKt3wUvA89bM5mOTYy2tClUPreeQxqSmbrN1s1vw35vS4mkY5nnnhQehWyAjAKIelm-LUUmgGpVVxUvKztAAOJcF8EqeowEhIAvFlLpEVylt8so44QM0G8d1X5sWT713tku4iXgR4rp2xXTvYodfnf0yMaRtwiHix77-xrMQZ9MlXuZLbOpmHVy6Rhfe1MndnOYQfWRk8lzM359eJuN5YUsFXbEShihgQhqgjHtuFHHUKM6kUJKTikprBFkp5j5XVpROEQAGzFtLRekppUN0f_y7a5uf3qVOb5q-jblSg5Kyyi2EZYocKds2KbXO610btqb91UD0wZbOtvTBlj7ZypG7YyQ45_5xCSBExegfJCpjdw</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>1988729104</pqid></control><display><type>article</type><title>Angular Effects on Single-Event Mechanisms in Bulk FinFET Technologies</title><source>IEEE Electronic Library (IEL)</source><creator>Nsengiyumva, Patrick ; Massengill, Lloyd W. ; Kauppila, Jeffrey S. ; Maharrey, Jeffrey A. ; Harrington, Rachel C. ; Haeffner, Timothy D. ; Ball, Dennis R. ; Alles, Michael L. ; Bhuva, Bharat L. ; Holman, W. Timothy ; Zhang, En Xia ; Rowe, Jason D. ; Sternberg, Andrew L.</creator><creatorcontrib>Nsengiyumva, Patrick ; Massengill, Lloyd W. ; Kauppila, Jeffrey S. ; Maharrey, Jeffrey A. ; Harrington, Rachel C. ; Haeffner, Timothy D. ; Ball, Dennis R. ; Alles, Michael L. ; Bhuva, Bharat L. ; Holman, W. Timothy ; Zhang, En Xia ; Rowe, Jason D. ; Sternberg, Andrew L.</creatorcontrib><description>Angular single-event (SE) mechanisms and experimental upset data for 14-/16-nm bulk fin field-effect transistor (FinFET) technologies are presented and analyzed. The discrete structure of FinFETs introduces unique geometrical and orientation dependences for angular SE mechanisms and SE upset (SEU) responses of FinFET circuits. Geometric analyses and 3-D technology computer-aided design results effectively explain the angular mechanisms behind experimentally observed SE crosssectional responses. Results show that angular SEU crosssectional characteristics can be attributed to the proportional contributions of charge deposition regions in the fin structure and the subfin bulk substrate.</description><identifier>ISSN: 0018-9499</identifier><identifier>EISSN: 1558-1578</identifier><identifier>DOI: 10.1109/TNS.2017.2775234</identifier><identifier>CODEN: IETNAE</identifier><language>eng</language><publisher>New York: IEEE</publisher><subject>Angular single-event effects (SEEs) ; CAD ; Charge deposition ; Circuit design ; compact models ; Computer aided design ; Field effect transistors ; fin field-effect transistor (FinFET) ; FinFETs ; flip-flop ; Periodic structures ; SE upset (SEU) ; SEE ; Silicon ; Single event upsets ; Substrates ; Technology assessment ; technology computer-aided design (TCAD) modeling ; Three-dimensional displays ; Two dimensional displays</subject><ispartof>IEEE transactions on nuclear science, 2018-01, Vol.65 (1), p.223-230</ispartof><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 2018</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c291t-b6a091468a1345f5a90e3a954869850738ca60b94edbc62e9011414fcc362f333</citedby><cites>FETCH-LOGICAL-c291t-b6a091468a1345f5a90e3a954869850738ca60b94edbc62e9011414fcc362f333</cites><orcidid>0000-0003-0270-7731</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/8116674$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,776,780,792,27901,27902,54733</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/8116674$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Nsengiyumva, Patrick</creatorcontrib><creatorcontrib>Massengill, Lloyd W.</creatorcontrib><creatorcontrib>Kauppila, Jeffrey S.</creatorcontrib><creatorcontrib>Maharrey, Jeffrey A.</creatorcontrib><creatorcontrib>Harrington, Rachel C.</creatorcontrib><creatorcontrib>Haeffner, Timothy D.</creatorcontrib><creatorcontrib>Ball, Dennis R.</creatorcontrib><creatorcontrib>Alles, Michael L.</creatorcontrib><creatorcontrib>Bhuva, Bharat L.</creatorcontrib><creatorcontrib>Holman, W. Timothy</creatorcontrib><creatorcontrib>Zhang, En Xia</creatorcontrib><creatorcontrib>Rowe, Jason D.</creatorcontrib><creatorcontrib>Sternberg, Andrew L.</creatorcontrib><title>Angular Effects on Single-Event Mechanisms in Bulk FinFET Technologies</title><title>IEEE transactions on nuclear science</title><addtitle>TNS</addtitle><description>Angular single-event (SE) mechanisms and experimental upset data for 14-/16-nm bulk fin field-effect transistor (FinFET) technologies are presented and analyzed. The discrete structure of FinFETs introduces unique geometrical and orientation dependences for angular SE mechanisms and SE upset (SEU) responses of FinFET circuits. Geometric analyses and 3-D technology computer-aided design results effectively explain the angular mechanisms behind experimentally observed SE crosssectional responses. Results show that angular SEU crosssectional characteristics can be attributed to the proportional contributions of charge deposition regions in the fin structure and the subfin bulk substrate.</description><subject>Angular single-event effects (SEEs)</subject><subject>CAD</subject><subject>Charge deposition</subject><subject>Circuit design</subject><subject>compact models</subject><subject>Computer aided design</subject><subject>Field effect transistors</subject><subject>fin field-effect transistor (FinFET)</subject><subject>FinFETs</subject><subject>flip-flop</subject><subject>Periodic structures</subject><subject>SE upset (SEU)</subject><subject>SEE</subject><subject>Silicon</subject><subject>Single event upsets</subject><subject>Substrates</subject><subject>Technology assessment</subject><subject>technology computer-aided design (TCAD) modeling</subject><subject>Three-dimensional displays</subject><subject>Two dimensional displays</subject><issn>0018-9499</issn><issn>1558-1578</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2018</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNo9kE1LAzEQhoMoWKt3wUvA89bM5mOTYy2tClUPreeQxqSmbrN1s1vw35vS4mkY5nnnhQehWyAjAKIelm-LUUmgGpVVxUvKztAAOJcF8EqeowEhIAvFlLpEVylt8so44QM0G8d1X5sWT713tku4iXgR4rp2xXTvYodfnf0yMaRtwiHix77-xrMQZ9MlXuZLbOpmHVy6Rhfe1MndnOYQfWRk8lzM359eJuN5YUsFXbEShihgQhqgjHtuFHHUKM6kUJKTikprBFkp5j5XVpROEQAGzFtLRekppUN0f_y7a5uf3qVOb5q-jblSg5Kyyi2EZYocKds2KbXO610btqb91UD0wZbOtvTBlj7ZypG7YyQ45_5xCSBExegfJCpjdw</recordid><startdate>201801</startdate><enddate>201801</enddate><creator>Nsengiyumva, Patrick</creator><creator>Massengill, Lloyd W.</creator><creator>Kauppila, Jeffrey S.</creator><creator>Maharrey, Jeffrey A.</creator><creator>Harrington, Rachel C.</creator><creator>Haeffner, Timothy D.</creator><creator>Ball, Dennis R.</creator><creator>Alles, Michael L.</creator><creator>Bhuva, Bharat L.</creator><creator>Holman, W. Timothy</creator><creator>Zhang, En Xia</creator><creator>Rowe, Jason D.</creator><creator>Sternberg, Andrew L.</creator><general>IEEE</general><general>The Institute of Electrical and Electronics Engineers, Inc. (IEEE)</general><scope>97E</scope><scope>RIA</scope><scope>RIE</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7QF</scope><scope>7QL</scope><scope>7QQ</scope><scope>7SC</scope><scope>7SE</scope><scope>7SP</scope><scope>7SR</scope><scope>7T7</scope><scope>7TA</scope><scope>7TB</scope><scope>7U5</scope><scope>7U9</scope><scope>8BQ</scope><scope>8FD</scope><scope>C1K</scope><scope>F28</scope><scope>FR3</scope><scope>H8D</scope><scope>H94</scope><scope>JG9</scope><scope>JQ2</scope><scope>KR7</scope><scope>L7M</scope><scope>L~C</scope><scope>L~D</scope><scope>M7N</scope><scope>P64</scope><orcidid>https://orcid.org/0000-0003-0270-7731</orcidid></search><sort><creationdate>201801</creationdate><title>Angular Effects on Single-Event Mechanisms in Bulk FinFET Technologies</title><author>Nsengiyumva, Patrick ; Massengill, Lloyd W. ; Kauppila, Jeffrey S. ; Maharrey, Jeffrey A. ; Harrington, Rachel C. ; Haeffner, Timothy D. ; Ball, Dennis R. ; Alles, Michael L. ; Bhuva, Bharat L. ; Holman, W. Timothy ; Zhang, En Xia ; Rowe, Jason D. ; Sternberg, Andrew L.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c291t-b6a091468a1345f5a90e3a954869850738ca60b94edbc62e9011414fcc362f333</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2018</creationdate><topic>Angular single-event effects (SEEs)</topic><topic>CAD</topic><topic>Charge deposition</topic><topic>Circuit design</topic><topic>compact models</topic><topic>Computer aided design</topic><topic>Field effect transistors</topic><topic>fin field-effect transistor (FinFET)</topic><topic>FinFETs</topic><topic>flip-flop</topic><topic>Periodic structures</topic><topic>SE upset (SEU)</topic><topic>SEE</topic><topic>Silicon</topic><topic>Single event upsets</topic><topic>Substrates</topic><topic>Technology assessment</topic><topic>technology computer-aided design (TCAD) modeling</topic><topic>Three-dimensional displays</topic><topic>Two dimensional displays</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Nsengiyumva, Patrick</creatorcontrib><creatorcontrib>Massengill, Lloyd W.</creatorcontrib><creatorcontrib>Kauppila, Jeffrey S.</creatorcontrib><creatorcontrib>Maharrey, Jeffrey A.</creatorcontrib><creatorcontrib>Harrington, Rachel C.</creatorcontrib><creatorcontrib>Haeffner, Timothy D.</creatorcontrib><creatorcontrib>Ball, Dennis R.</creatorcontrib><creatorcontrib>Alles, Michael L.</creatorcontrib><creatorcontrib>Bhuva, Bharat L.</creatorcontrib><creatorcontrib>Holman, W. Timothy</creatorcontrib><creatorcontrib>Zhang, En Xia</creatorcontrib><creatorcontrib>Rowe, Jason D.</creatorcontrib><creatorcontrib>Sternberg, Andrew L.</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005-present</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>CrossRef</collection><collection>Aluminium Industry Abstracts</collection><collection>Bacteriology Abstracts (Microbiology B)</collection><collection>Ceramic Abstracts</collection><collection>Computer and Information Systems Abstracts</collection><collection>Corrosion Abstracts</collection><collection>Electronics & Communications Abstracts</collection><collection>Engineered Materials Abstracts</collection><collection>Industrial and Applied Microbiology Abstracts (Microbiology A)</collection><collection>Materials Business File</collection><collection>Mechanical & Transportation Engineering Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Virology and AIDS Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Environmental Sciences and Pollution Management</collection><collection>ANTE: Abstracts in New Technology & Engineering</collection><collection>Engineering Research Database</collection><collection>Aerospace Database</collection><collection>AIDS and Cancer Research Abstracts</collection><collection>Materials Research Database</collection><collection>ProQuest Computer Science Collection</collection><collection>Civil Engineering Abstracts</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>Computer and Information Systems Abstracts Academic</collection><collection>Computer and Information Systems Abstracts Professional</collection><collection>Algology Mycology and Protozoology Abstracts (Microbiology C)</collection><collection>Biotechnology and BioEngineering Abstracts</collection><jtitle>IEEE transactions on nuclear science</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Nsengiyumva, Patrick</au><au>Massengill, Lloyd W.</au><au>Kauppila, Jeffrey S.</au><au>Maharrey, Jeffrey A.</au><au>Harrington, Rachel C.</au><au>Haeffner, Timothy D.</au><au>Ball, Dennis R.</au><au>Alles, Michael L.</au><au>Bhuva, Bharat L.</au><au>Holman, W. Timothy</au><au>Zhang, En Xia</au><au>Rowe, Jason D.</au><au>Sternberg, Andrew L.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Angular Effects on Single-Event Mechanisms in Bulk FinFET Technologies</atitle><jtitle>IEEE transactions on nuclear science</jtitle><stitle>TNS</stitle><date>2018-01</date><risdate>2018</risdate><volume>65</volume><issue>1</issue><spage>223</spage><epage>230</epage><pages>223-230</pages><issn>0018-9499</issn><eissn>1558-1578</eissn><coden>IETNAE</coden><abstract>Angular single-event (SE) mechanisms and experimental upset data for 14-/16-nm bulk fin field-effect transistor (FinFET) technologies are presented and analyzed. The discrete structure of FinFETs introduces unique geometrical and orientation dependences for angular SE mechanisms and SE upset (SEU) responses of FinFET circuits. Geometric analyses and 3-D technology computer-aided design results effectively explain the angular mechanisms behind experimentally observed SE crosssectional responses. Results show that angular SEU crosssectional characteristics can be attributed to the proportional contributions of charge deposition regions in the fin structure and the subfin bulk substrate.</abstract><cop>New York</cop><pub>IEEE</pub><doi>10.1109/TNS.2017.2775234</doi><tpages>8</tpages><orcidid>https://orcid.org/0000-0003-0270-7731</orcidid></addata></record> |
| fulltext | fulltext_linktorsrc |
| identifier | ISSN: 0018-9499 |
| ispartof | IEEE transactions on nuclear science, 2018-01, Vol.65 (1), p.223-230 |
| issn | 0018-9499 1558-1578 |
| language | eng |
| recordid | cdi_proquest_journals_1988729104 |
| source | IEEE Electronic Library (IEL) |
| subjects | Angular single-event effects (SEEs) CAD Charge deposition Circuit design compact models Computer aided design Field effect transistors fin field-effect transistor (FinFET) FinFETs flip-flop Periodic structures SE upset (SEU) SEE Silicon Single event upsets Substrates Technology assessment technology computer-aided design (TCAD) modeling Three-dimensional displays Two dimensional displays |
| title | Angular Effects on Single-Event Mechanisms in Bulk FinFET Technologies |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-14T11%3A15%3A00IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_RIE&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Angular%20Effects%20on%20Single-Event%20Mechanisms%20in%20Bulk%20FinFET%20Technologies&rft.jtitle=IEEE%20transactions%20on%20nuclear%20science&rft.au=Nsengiyumva,%20Patrick&rft.date=2018-01&rft.volume=65&rft.issue=1&rft.spage=223&rft.epage=230&rft.pages=223-230&rft.issn=0018-9499&rft.eissn=1558-1578&rft.coden=IETNAE&rft_id=info:doi/10.1109/TNS.2017.2775234&rft_dat=%3Cproquest_RIE%3E1988729104%3C/proquest_RIE%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=1988729104&rft_id=info:pmid/&rft_ieee_id=8116674&rfr_iscdi=true |