Time-Resolved Reflectivity and Temperature Measurements During Laser Irradiation of Crystalline Silicon
Time-resolved reflectivity measurements have been used to characterize the temperature-dependence of the reflectivity of crystalline silicon between room temperature and the melting point during pulsed laser irradiation ([lambda] = 532 nm, pulse durations between 50 ns and 600 ns). Based on these me...
Gespeichert in:
| Veröffentlicht in: | Journal of laser micro nanoengineering 2017-12, Vol.12 (3), p.230-234 |
|---|---|
| Hauptverfasser: | , , |
| Format: | Artikel |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | 234 |
|---|---|
| container_issue | 3 |
| container_start_page | 230 |
| container_title | Journal of laser micro nanoengineering |
| container_volume | 12 |
| creator | Diez, Michael Ametowobla, Mawuli Graf, Thomas |
| description | Time-resolved reflectivity measurements have been used to characterize the temperature-dependence of the reflectivity of crystalline silicon between room temperature and the melting point during pulsed laser irradiation ([lambda] = 532 nm, pulse durations between 50 ns and 600 ns). Based on these measurements, the reflectivity [R.sub.Si]([T.sub.m]) of the hot solid just before the onset of melting was determined for the probe wavelength of [lambda] = 632.8 nm. For this wavelength, [R.sub.Si]([T.sub.m]) was found to be 39.8 % [+ or -] 0.6 %. The increase of the measured reflectivity was correlated to the laser-induced temperature increase of the silicon surface as calculated by solving the 1D heat-conduction equation. This approach allows to indirectly determine the temperature in the laser-material interaction zone on the surface of a silicon sample during pulsed laser irradiation with sub-nanosecond time resolution by monitoring its reflectivity. Keywords: reflectivity, silicon, laser, pump-probe, temperature dependence, melting point |
| doi_str_mv | 10.2961/jlmn.2017.03.0010 |
| format | Article |
| fullrecord | <record><control><sourceid>gale_proqu</sourceid><recordid>TN_cdi_proquest_journals_1987371180</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><galeid>A528197978</galeid><sourcerecordid>A528197978</sourcerecordid><originalsourceid>FETCH-LOGICAL-c410t-3990623bcd581b46711c4fa5209219883a12dc4a03a82a7fee8213e1f27b2aac3</originalsourceid><addsrcrecordid>eNpNUU1LAzEQXUTBov0B3gKed80kbTd7lPoJFUHrOUyzk5Kym61JKvTfm6UenDm8YXjvzcArihvglWgWcLfrel8JDnXFZcU58LNiAkrxki-UOv83XxbTGHc8l1JzqMWk2K5dT-UHxaH7oZZ9kO3IJPfj0pGhb9ma-j0FTIdA7I0wZuzJp8geDsH5LVthpMBeQ8DWYXKDZ4Nly3CMCbvOeWKfrnNm8NfFhcUu0vQPr4qvp8f18qVcvT-_Lu9XpZkBT6VsGr4QcmPauYLNbFEDmJnFueCNgEYpiSBaM0MuUQmsLZESIAmsqDcC0cir4vbkuw_D94Fi0rvhEHw-qbO-ltlQ8cyqTqwtdqSdt0MKaHK31I_fknV5fz8XCpq6qVUWwElgwhBjIKv3wfUYjhq4HjPQYwZ6zEBzqccM5C8WeXsC</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>1987371180</pqid></control><display><type>article</type><title>Time-Resolved Reflectivity and Temperature Measurements During Laser Irradiation of Crystalline Silicon</title><source>Elektronische Zeitschriftenbibliothek - Frei zugängliche E-Journals</source><creator>Diez, Michael ; Ametowobla, Mawuli ; Graf, Thomas</creator><creatorcontrib>Diez, Michael ; Ametowobla, Mawuli ; Graf, Thomas</creatorcontrib><description>Time-resolved reflectivity measurements have been used to characterize the temperature-dependence of the reflectivity of crystalline silicon between room temperature and the melting point during pulsed laser irradiation ([lambda] = 532 nm, pulse durations between 50 ns and 600 ns). Based on these measurements, the reflectivity [R.sub.Si]([T.sub.m]) of the hot solid just before the onset of melting was determined for the probe wavelength of [lambda] = 632.8 nm. For this wavelength, [R.sub.Si]([T.sub.m]) was found to be 39.8 % [+ or -] 0.6 %. The increase of the measured reflectivity was correlated to the laser-induced temperature increase of the silicon surface as calculated by solving the 1D heat-conduction equation. This approach allows to indirectly determine the temperature in the laser-material interaction zone on the surface of a silicon sample during pulsed laser irradiation with sub-nanosecond time resolution by monitoring its reflectivity. Keywords: reflectivity, silicon, laser, pump-probe, temperature dependence, melting point</description><identifier>ISSN: 1880-0688</identifier><identifier>EISSN: 1880-0688</identifier><identifier>DOI: 10.2961/jlmn.2017.03.0010</identifier><language>eng</language><publisher>Ibaraki: Japan Laser Processing Society</publisher><subject>Conduction heating ; Cooling ; Correlation analysis ; Crystal structure ; Crystallinity ; Irradiation ; Lasers ; Oxidation ; Reflectance ; Semiconductors ; Silicon ; Temperature ; Temperature dependence ; Thermal conductivity</subject><ispartof>Journal of laser micro nanoengineering, 2017-12, Vol.12 (3), p.230-234</ispartof><rights>COPYRIGHT 2017 Japan Laser Processing Society</rights><rights>Copyright Reza Netsu Kako Kenkyukai Dec 2017</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c410t-3990623bcd581b46711c4fa5209219883a12dc4a03a82a7fee8213e1f27b2aac3</citedby></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,777,781,27905,27906</link.rule.ids></links><search><creatorcontrib>Diez, Michael</creatorcontrib><creatorcontrib>Ametowobla, Mawuli</creatorcontrib><creatorcontrib>Graf, Thomas</creatorcontrib><title>Time-Resolved Reflectivity and Temperature Measurements During Laser Irradiation of Crystalline Silicon</title><title>Journal of laser micro nanoengineering</title><description>Time-resolved reflectivity measurements have been used to characterize the temperature-dependence of the reflectivity of crystalline silicon between room temperature and the melting point during pulsed laser irradiation ([lambda] = 532 nm, pulse durations between 50 ns and 600 ns). Based on these measurements, the reflectivity [R.sub.Si]([T.sub.m]) of the hot solid just before the onset of melting was determined for the probe wavelength of [lambda] = 632.8 nm. For this wavelength, [R.sub.Si]([T.sub.m]) was found to be 39.8 % [+ or -] 0.6 %. The increase of the measured reflectivity was correlated to the laser-induced temperature increase of the silicon surface as calculated by solving the 1D heat-conduction equation. This approach allows to indirectly determine the temperature in the laser-material interaction zone on the surface of a silicon sample during pulsed laser irradiation with sub-nanosecond time resolution by monitoring its reflectivity. Keywords: reflectivity, silicon, laser, pump-probe, temperature dependence, melting point</description><subject>Conduction heating</subject><subject>Cooling</subject><subject>Correlation analysis</subject><subject>Crystal structure</subject><subject>Crystallinity</subject><subject>Irradiation</subject><subject>Lasers</subject><subject>Oxidation</subject><subject>Reflectance</subject><subject>Semiconductors</subject><subject>Silicon</subject><subject>Temperature</subject><subject>Temperature dependence</subject><subject>Thermal conductivity</subject><issn>1880-0688</issn><issn>1880-0688</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2017</creationdate><recordtype>article</recordtype><sourceid>ABUWG</sourceid><sourceid>AFKRA</sourceid><sourceid>BENPR</sourceid><sourceid>CCPQU</sourceid><sourceid>DWQXO</sourceid><recordid>eNpNUU1LAzEQXUTBov0B3gKed80kbTd7lPoJFUHrOUyzk5Kym61JKvTfm6UenDm8YXjvzcArihvglWgWcLfrel8JDnXFZcU58LNiAkrxki-UOv83XxbTGHc8l1JzqMWk2K5dT-UHxaH7oZZ9kO3IJPfj0pGhb9ma-j0FTIdA7I0wZuzJp8geDsH5LVthpMBeQ8DWYXKDZ4Nly3CMCbvOeWKfrnNm8NfFhcUu0vQPr4qvp8f18qVcvT-_Lu9XpZkBT6VsGr4QcmPauYLNbFEDmJnFueCNgEYpiSBaM0MuUQmsLZESIAmsqDcC0cir4vbkuw_D94Fi0rvhEHw-qbO-ltlQ8cyqTqwtdqSdt0MKaHK31I_fknV5fz8XCpq6qVUWwElgwhBjIKv3wfUYjhq4HjPQYwZ6zEBzqccM5C8WeXsC</recordid><startdate>20171201</startdate><enddate>20171201</enddate><creator>Diez, Michael</creator><creator>Ametowobla, Mawuli</creator><creator>Graf, Thomas</creator><general>Japan Laser Processing Society</general><general>Reza Netsu Kako Kenkyukai</general><scope>AAYXX</scope><scope>CITATION</scope><scope>8FE</scope><scope>8FG</scope><scope>ABJCF</scope><scope>ABUWG</scope><scope>AFKRA</scope><scope>ARAPS</scope><scope>BENPR</scope><scope>BGLVJ</scope><scope>BVBZV</scope><scope>CCPQU</scope><scope>D1I</scope><scope>DWQXO</scope><scope>HCIFZ</scope><scope>KB.</scope><scope>L6V</scope><scope>M7S</scope><scope>P5Z</scope><scope>P62</scope><scope>PDBOC</scope><scope>PQEST</scope><scope>PQQKQ</scope><scope>PQUKI</scope><scope>PRINS</scope><scope>PTHSS</scope></search><sort><creationdate>20171201</creationdate><title>Time-Resolved Reflectivity and Temperature Measurements During Laser Irradiation of Crystalline Silicon</title><author>Diez, Michael ; Ametowobla, Mawuli ; Graf, Thomas</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c410t-3990623bcd581b46711c4fa5209219883a12dc4a03a82a7fee8213e1f27b2aac3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2017</creationdate><topic>Conduction heating</topic><topic>Cooling</topic><topic>Correlation analysis</topic><topic>Crystal structure</topic><topic>Crystallinity</topic><topic>Irradiation</topic><topic>Lasers</topic><topic>Oxidation</topic><topic>Reflectance</topic><topic>Semiconductors</topic><topic>Silicon</topic><topic>Temperature</topic><topic>Temperature dependence</topic><topic>Thermal conductivity</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Diez, Michael</creatorcontrib><creatorcontrib>Ametowobla, Mawuli</creatorcontrib><creatorcontrib>Graf, Thomas</creatorcontrib><collection>CrossRef</collection><collection>ProQuest SciTech Collection</collection><collection>ProQuest Technology Collection</collection><collection>Materials Science & Engineering Collection</collection><collection>ProQuest Central (Alumni Edition)</collection><collection>ProQuest Central UK/Ireland</collection><collection>Advanced Technologies & Aerospace Collection</collection><collection>ProQuest Central</collection><collection>Technology Collection</collection><collection>East & South Asia Database</collection><collection>ProQuest One Community College</collection><collection>ProQuest Materials Science Collection</collection><collection>ProQuest Central Korea</collection><collection>SciTech Premium Collection</collection><collection>Materials Science Database</collection><collection>ProQuest Engineering Collection</collection><collection>Engineering Database</collection><collection>Advanced Technologies & Aerospace Database</collection><collection>ProQuest Advanced Technologies & Aerospace Collection</collection><collection>Materials Science Collection</collection><collection>ProQuest One Academic Eastern Edition (DO NOT USE)</collection><collection>ProQuest One Academic</collection><collection>ProQuest One Academic UKI Edition</collection><collection>ProQuest Central China</collection><collection>Engineering Collection</collection><jtitle>Journal of laser micro nanoengineering</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Diez, Michael</au><au>Ametowobla, Mawuli</au><au>Graf, Thomas</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Time-Resolved Reflectivity and Temperature Measurements During Laser Irradiation of Crystalline Silicon</atitle><jtitle>Journal of laser micro nanoengineering</jtitle><date>2017-12-01</date><risdate>2017</risdate><volume>12</volume><issue>3</issue><spage>230</spage><epage>234</epage><pages>230-234</pages><issn>1880-0688</issn><eissn>1880-0688</eissn><abstract>Time-resolved reflectivity measurements have been used to characterize the temperature-dependence of the reflectivity of crystalline silicon between room temperature and the melting point during pulsed laser irradiation ([lambda] = 532 nm, pulse durations between 50 ns and 600 ns). Based on these measurements, the reflectivity [R.sub.Si]([T.sub.m]) of the hot solid just before the onset of melting was determined for the probe wavelength of [lambda] = 632.8 nm. For this wavelength, [R.sub.Si]([T.sub.m]) was found to be 39.8 % [+ or -] 0.6 %. The increase of the measured reflectivity was correlated to the laser-induced temperature increase of the silicon surface as calculated by solving the 1D heat-conduction equation. This approach allows to indirectly determine the temperature in the laser-material interaction zone on the surface of a silicon sample during pulsed laser irradiation with sub-nanosecond time resolution by monitoring its reflectivity. Keywords: reflectivity, silicon, laser, pump-probe, temperature dependence, melting point</abstract><cop>Ibaraki</cop><pub>Japan Laser Processing Society</pub><doi>10.2961/jlmn.2017.03.0010</doi><tpages>5</tpages><oa>free_for_read</oa></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 1880-0688 |
| ispartof | Journal of laser micro nanoengineering, 2017-12, Vol.12 (3), p.230-234 |
| issn | 1880-0688 1880-0688 |
| language | eng |
| recordid | cdi_proquest_journals_1987371180 |
| source | Elektronische Zeitschriftenbibliothek - Frei zugängliche E-Journals |
| subjects | Conduction heating Cooling Correlation analysis Crystal structure Crystallinity Irradiation Lasers Oxidation Reflectance Semiconductors Silicon Temperature Temperature dependence Thermal conductivity |
| title | Time-Resolved Reflectivity and Temperature Measurements During Laser Irradiation of Crystalline Silicon |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-19T10%3A47%3A18IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-gale_proqu&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Time-Resolved%20Reflectivity%20and%20Temperature%20Measurements%20During%20Laser%20Irradiation%20of%20Crystalline%20Silicon&rft.jtitle=Journal%20of%20laser%20micro%20nanoengineering&rft.au=Diez,%20Michael&rft.date=2017-12-01&rft.volume=12&rft.issue=3&rft.spage=230&rft.epage=234&rft.pages=230-234&rft.issn=1880-0688&rft.eissn=1880-0688&rft_id=info:doi/10.2961/jlmn.2017.03.0010&rft_dat=%3Cgale_proqu%3EA528197978%3C/gale_proqu%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=1987371180&rft_id=info:pmid/&rft_galeid=A528197978&rfr_iscdi=true |