Analysis of current conduction mechanism in CZTSSe/n-Si structure
In this study, Cu 2 ZnSn(S,Se) 4 (CZTSSe) thin films were deposited by the single step thermal evaporation process using the sintered powder of CZTSSe on soda lime glass (SLG) and Si wafer substrates. The structural, optical, and electrical properties of deposited films were investigated. Current–vo...
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| Veröffentlicht in: | Journal of materials science. Materials in electronics 2018-04, Vol.29 (7), p.5264-5274 |
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| creator | Terlemezoglu, M. Bayraklı, Ö. Güllü, H. H. Çolakoğlu, T. Yildiz, D. E. Parlak, M. |
| description | In this study, Cu
2
ZnSn(S,Se)
4
(CZTSSe) thin films were deposited by the single step thermal evaporation process using the sintered powder of CZTSSe on soda lime glass (SLG) and Si wafer substrates. The structural, optical, and electrical properties of deposited films were investigated. Current–voltage (I–V) in the temperature range of 250–350 K, capacitance–voltage(C–V) and conductance–voltage (G/w–V) measurements at room temperature were carried out to determine electrical properties of CZTSSe/n-Si structure. The forward bias I–V analysis based on thermionic emission (TE) showed barrier height inhomogeneity at the interface and thus, the conduction mechanism was modeled under the assumption of Gaussian distribution of barrier height. The mean barrier height
(
Φ
¯
B
0
)
and standard deviation
(
σ
0
)
at zero bias were obtained as 1.27 eV and 0.18 V, respectively. Moreover, Richardson constant was obtained as 120.46 A cm
−2
K
−2
via modified Richardson plot and the density of interface states (D
it
) profile was determined using the data obtained from forward bias I–V measurements. In addition, by the results of frequency dependent C–V measurements, characteristics of the interface state density were calculated applying high-low frequency capacitance (C
HF
− C
LF
) and Hill–Coleman methods. |
| doi_str_mv | 10.1007/s10854-017-8490-1 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_journals_1985024034</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>1985024034</sourcerecordid><originalsourceid>FETCH-LOGICAL-c316t-9f0f77e4a17ea65471156411c4246107ace9083ca05d9ef7bdaca746cfbcf74a3</originalsourceid><addsrcrecordid>eNp1kD9PwzAQRy0EEqXwAdgsMZveJec4GauKf1IlhhQJsViua0Oq1il2MvTbkyoMLEy3vPfT6TF2i3CPAGqWEEpJAlCJkioQeMYmKFUuqMzez9kEKqkEySy7ZFcpbQGgoLycsPk8mN0xNYm3nts-Rhc6btuw6W3XtIHvnf0yoUl73gS--FjVtZsFUTc8dXFA-uiu2YU3u-Rufu-UvT0-rBbPYvn69LKYL4XNsehE5cEr5cigcqaQpBBlQYiWMioQlLGugjK3BuSmcl6tN8YaRYX1a-sVmXzK7sbdQ2y_e5c6vW37OHyfNFalhIwgp4HCkbKxTSk6rw-x2Zt41Aj6VEqPpfRQSp9KaRycbHTSwIZPF_8s_yv9AEw7awQ</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>1985024034</pqid></control><display><type>article</type><title>Analysis of current conduction mechanism in CZTSSe/n-Si structure</title><source>SpringerLink Journals - AutoHoldings</source><creator>Terlemezoglu, M. ; Bayraklı, Ö. ; Güllü, H. H. ; Çolakoğlu, T. ; Yildiz, D. E. ; Parlak, M.</creator><creatorcontrib>Terlemezoglu, M. ; Bayraklı, Ö. ; Güllü, H. H. ; Çolakoğlu, T. ; Yildiz, D. E. ; Parlak, M.</creatorcontrib><description>In this study, Cu
2
ZnSn(S,Se)
4
(CZTSSe) thin films were deposited by the single step thermal evaporation process using the sintered powder of CZTSSe on soda lime glass (SLG) and Si wafer substrates. The structural, optical, and electrical properties of deposited films were investigated. Current–voltage (I–V) in the temperature range of 250–350 K, capacitance–voltage(C–V) and conductance–voltage (G/w–V) measurements at room temperature were carried out to determine electrical properties of CZTSSe/n-Si structure. The forward bias I–V analysis based on thermionic emission (TE) showed barrier height inhomogeneity at the interface and thus, the conduction mechanism was modeled under the assumption of Gaussian distribution of barrier height. The mean barrier height
(
Φ
¯
B
0
)
and standard deviation
(
σ
0
)
at zero bias were obtained as 1.27 eV and 0.18 V, respectively. Moreover, Richardson constant was obtained as 120.46 A cm
−2
K
−2
via modified Richardson plot and the density of interface states (D
it
) profile was determined using the data obtained from forward bias I–V measurements. In addition, by the results of frequency dependent C–V measurements, characteristics of the interface state density were calculated applying high-low frequency capacitance (C
HF
− C
LF
) and Hill–Coleman methods.</description><identifier>ISSN: 0957-4522</identifier><identifier>EISSN: 1573-482X</identifier><identifier>DOI: 10.1007/s10854-017-8490-1</identifier><language>eng</language><publisher>New York: Springer US</publisher><subject>Barriers ; Bias ; Capacitance ; Characterization and Evaluation of Materials ; Chemistry and Materials Science ; Electric potential ; Electrical properties ; Emission analysis ; Gaussian distribution ; Inhomogeneity ; Materials Science ; Normal distribution ; Optical and Electronic Materials ; Optical properties ; Resistance ; Silicon substrates ; Sintering (powder metallurgy) ; Soda-lime glass ; Thermionic emission ; Thin films</subject><ispartof>Journal of materials science. Materials in electronics, 2018-04, Vol.29 (7), p.5264-5274</ispartof><rights>Springer Science+Business Media, LLC, part of Springer Nature 2018</rights><rights>Journal of Materials Science: Materials in Electronics is a copyright of Springer, (2018). All Rights Reserved.</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c316t-9f0f77e4a17ea65471156411c4246107ace9083ca05d9ef7bdaca746cfbcf74a3</citedby><cites>FETCH-LOGICAL-c316t-9f0f77e4a17ea65471156411c4246107ace9083ca05d9ef7bdaca746cfbcf74a3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://link.springer.com/content/pdf/10.1007/s10854-017-8490-1$$EPDF$$P50$$Gspringer$$H</linktopdf><linktohtml>$$Uhttps://link.springer.com/10.1007/s10854-017-8490-1$$EHTML$$P50$$Gspringer$$H</linktohtml><link.rule.ids>314,780,784,27924,27925,41488,42557,51319</link.rule.ids></links><search><creatorcontrib>Terlemezoglu, M.</creatorcontrib><creatorcontrib>Bayraklı, Ö.</creatorcontrib><creatorcontrib>Güllü, H. H.</creatorcontrib><creatorcontrib>Çolakoğlu, T.</creatorcontrib><creatorcontrib>Yildiz, D. E.</creatorcontrib><creatorcontrib>Parlak, M.</creatorcontrib><title>Analysis of current conduction mechanism in CZTSSe/n-Si structure</title><title>Journal of materials science. Materials in electronics</title><addtitle>J Mater Sci: Mater Electron</addtitle><description>In this study, Cu
2
ZnSn(S,Se)
4
(CZTSSe) thin films were deposited by the single step thermal evaporation process using the sintered powder of CZTSSe on soda lime glass (SLG) and Si wafer substrates. The structural, optical, and electrical properties of deposited films were investigated. Current–voltage (I–V) in the temperature range of 250–350 K, capacitance–voltage(C–V) and conductance–voltage (G/w–V) measurements at room temperature were carried out to determine electrical properties of CZTSSe/n-Si structure. The forward bias I–V analysis based on thermionic emission (TE) showed barrier height inhomogeneity at the interface and thus, the conduction mechanism was modeled under the assumption of Gaussian distribution of barrier height. The mean barrier height
(
Φ
¯
B
0
)
and standard deviation
(
σ
0
)
at zero bias were obtained as 1.27 eV and 0.18 V, respectively. Moreover, Richardson constant was obtained as 120.46 A cm
−2
K
−2
via modified Richardson plot and the density of interface states (D
it
) profile was determined using the data obtained from forward bias I–V measurements. In addition, by the results of frequency dependent C–V measurements, characteristics of the interface state density were calculated applying high-low frequency capacitance (C
HF
− C
LF
) and Hill–Coleman methods.</description><subject>Barriers</subject><subject>Bias</subject><subject>Capacitance</subject><subject>Characterization and Evaluation of Materials</subject><subject>Chemistry and Materials Science</subject><subject>Electric potential</subject><subject>Electrical properties</subject><subject>Emission analysis</subject><subject>Gaussian distribution</subject><subject>Inhomogeneity</subject><subject>Materials Science</subject><subject>Normal distribution</subject><subject>Optical and Electronic Materials</subject><subject>Optical properties</subject><subject>Resistance</subject><subject>Silicon substrates</subject><subject>Sintering (powder metallurgy)</subject><subject>Soda-lime glass</subject><subject>Thermionic emission</subject><subject>Thin films</subject><issn>0957-4522</issn><issn>1573-482X</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2018</creationdate><recordtype>article</recordtype><sourceid>AFKRA</sourceid><sourceid>BENPR</sourceid><sourceid>CCPQU</sourceid><sourceid>DWQXO</sourceid><recordid>eNp1kD9PwzAQRy0EEqXwAdgsMZveJec4GauKf1IlhhQJsViua0Oq1il2MvTbkyoMLEy3vPfT6TF2i3CPAGqWEEpJAlCJkioQeMYmKFUuqMzez9kEKqkEySy7ZFcpbQGgoLycsPk8mN0xNYm3nts-Rhc6btuw6W3XtIHvnf0yoUl73gS--FjVtZsFUTc8dXFA-uiu2YU3u-Rufu-UvT0-rBbPYvn69LKYL4XNsehE5cEr5cigcqaQpBBlQYiWMioQlLGugjK3BuSmcl6tN8YaRYX1a-sVmXzK7sbdQ2y_e5c6vW37OHyfNFalhIwgp4HCkbKxTSk6rw-x2Zt41Aj6VEqPpfRQSp9KaRycbHTSwIZPF_8s_yv9AEw7awQ</recordid><startdate>20180401</startdate><enddate>20180401</enddate><creator>Terlemezoglu, M.</creator><creator>Bayraklı, Ö.</creator><creator>Güllü, H. H.</creator><creator>Çolakoğlu, T.</creator><creator>Yildiz, D. E.</creator><creator>Parlak, M.</creator><general>Springer US</general><general>Springer Nature B.V</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>7SR</scope><scope>8BQ</scope><scope>8FD</scope><scope>8FE</scope><scope>8FG</scope><scope>ABJCF</scope><scope>AFKRA</scope><scope>ARAPS</scope><scope>BENPR</scope><scope>BGLVJ</scope><scope>CCPQU</scope><scope>D1I</scope><scope>DWQXO</scope><scope>F28</scope><scope>FR3</scope><scope>HCIFZ</scope><scope>JG9</scope><scope>KB.</scope><scope>L7M</scope><scope>P5Z</scope><scope>P62</scope><scope>PDBOC</scope><scope>PQEST</scope><scope>PQQKQ</scope><scope>PQUKI</scope><scope>PRINS</scope><scope>S0W</scope></search><sort><creationdate>20180401</creationdate><title>Analysis of current conduction mechanism in CZTSSe/n-Si structure</title><author>Terlemezoglu, M. ; Bayraklı, Ö. ; Güllü, H. H. ; Çolakoğlu, T. ; Yildiz, D. E. ; Parlak, M.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c316t-9f0f77e4a17ea65471156411c4246107ace9083ca05d9ef7bdaca746cfbcf74a3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2018</creationdate><topic>Barriers</topic><topic>Bias</topic><topic>Capacitance</topic><topic>Characterization and Evaluation of Materials</topic><topic>Chemistry and Materials Science</topic><topic>Electric potential</topic><topic>Electrical properties</topic><topic>Emission analysis</topic><topic>Gaussian distribution</topic><topic>Inhomogeneity</topic><topic>Materials Science</topic><topic>Normal distribution</topic><topic>Optical and Electronic Materials</topic><topic>Optical properties</topic><topic>Resistance</topic><topic>Silicon substrates</topic><topic>Sintering (powder metallurgy)</topic><topic>Soda-lime glass</topic><topic>Thermionic emission</topic><topic>Thin films</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Terlemezoglu, M.</creatorcontrib><creatorcontrib>Bayraklı, Ö.</creatorcontrib><creatorcontrib>Güllü, H. H.</creatorcontrib><creatorcontrib>Çolakoğlu, T.</creatorcontrib><creatorcontrib>Yildiz, D. E.</creatorcontrib><creatorcontrib>Parlak, M.</creatorcontrib><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Engineered Materials Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>ProQuest SciTech Collection</collection><collection>ProQuest Technology Collection</collection><collection>Materials Science & Engineering Collection</collection><collection>ProQuest Central UK/Ireland</collection><collection>Advanced Technologies & Aerospace Collection</collection><collection>ProQuest Central</collection><collection>Technology Collection</collection><collection>ProQuest One Community College</collection><collection>ProQuest Materials Science Collection</collection><collection>ProQuest Central Korea</collection><collection>ANTE: Abstracts in New Technology & Engineering</collection><collection>Engineering Research Database</collection><collection>SciTech Premium Collection</collection><collection>Materials Research Database</collection><collection>Materials Science Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>Advanced Technologies & Aerospace Database</collection><collection>ProQuest Advanced Technologies & Aerospace Collection</collection><collection>Materials Science Collection</collection><collection>ProQuest One Academic Eastern Edition (DO NOT USE)</collection><collection>ProQuest One Academic</collection><collection>ProQuest One Academic UKI Edition</collection><collection>ProQuest Central China</collection><collection>DELNET Engineering & Technology Collection</collection><jtitle>Journal of materials science. Materials in electronics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Terlemezoglu, M.</au><au>Bayraklı, Ö.</au><au>Güllü, H. H.</au><au>Çolakoğlu, T.</au><au>Yildiz, D. E.</au><au>Parlak, M.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Analysis of current conduction mechanism in CZTSSe/n-Si structure</atitle><jtitle>Journal of materials science. Materials in electronics</jtitle><stitle>J Mater Sci: Mater Electron</stitle><date>2018-04-01</date><risdate>2018</risdate><volume>29</volume><issue>7</issue><spage>5264</spage><epage>5274</epage><pages>5264-5274</pages><issn>0957-4522</issn><eissn>1573-482X</eissn><abstract>In this study, Cu
2
ZnSn(S,Se)
4
(CZTSSe) thin films were deposited by the single step thermal evaporation process using the sintered powder of CZTSSe on soda lime glass (SLG) and Si wafer substrates. The structural, optical, and electrical properties of deposited films were investigated. Current–voltage (I–V) in the temperature range of 250–350 K, capacitance–voltage(C–V) and conductance–voltage (G/w–V) measurements at room temperature were carried out to determine electrical properties of CZTSSe/n-Si structure. The forward bias I–V analysis based on thermionic emission (TE) showed barrier height inhomogeneity at the interface and thus, the conduction mechanism was modeled under the assumption of Gaussian distribution of barrier height. The mean barrier height
(
Φ
¯
B
0
)
and standard deviation
(
σ
0
)
at zero bias were obtained as 1.27 eV and 0.18 V, respectively. Moreover, Richardson constant was obtained as 120.46 A cm
−2
K
−2
via modified Richardson plot and the density of interface states (D
it
) profile was determined using the data obtained from forward bias I–V measurements. In addition, by the results of frequency dependent C–V measurements, characteristics of the interface state density were calculated applying high-low frequency capacitance (C
HF
− C
LF
) and Hill–Coleman methods.</abstract><cop>New York</cop><pub>Springer US</pub><doi>10.1007/s10854-017-8490-1</doi><tpages>11</tpages></addata></record> |
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| language | eng |
| recordid | cdi_proquest_journals_1985024034 |
| source | SpringerLink Journals - AutoHoldings |
| subjects | Barriers Bias Capacitance Characterization and Evaluation of Materials Chemistry and Materials Science Electric potential Electrical properties Emission analysis Gaussian distribution Inhomogeneity Materials Science Normal distribution Optical and Electronic Materials Optical properties Resistance Silicon substrates Sintering (powder metallurgy) Soda-lime glass Thermionic emission Thin films |
| title | Analysis of current conduction mechanism in CZTSSe/n-Si structure |
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