Immobilization of glucose oxidase on ZnO nanorods decorated electrolyte-gated field effect transistor for glucose detection
In this paper, we report on growth of ZnO nanorods on the surface of gold interdigital electrodes and its implementation as a conductive n-type channel for the fabrication of a liquid-gated field effect transistor. Glucose oxidase was immobilized on the surface of the ZnO nanorods and the fabricated...
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| Veröffentlicht in: | Journal of solid state electrochemistry 2018, Vol.22 (1), p.61-67 |
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| container_title | Journal of solid state electrochemistry |
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| creator | Fathollahzadeh, M. Hosseini, M. Norouzi, M. Ebrahimi, A. Fathipour, M. Kolahdouz, M. Haghighi, B. |
| description | In this paper, we report on growth of ZnO nanorods on the surface of gold interdigital electrodes and its implementation as a conductive n-type channel for the fabrication of a liquid-gated field effect transistor. Glucose oxidase was immobilized on the surface of the ZnO nanorods and the fabricated device was used as a four-electrode glucose biosensor. The resistance of the conductive channel was affected by addition of glucose. The applied bias voltage to the gate in the fabricated device affects the channel resistance in the same manner as the increase of enzymatic products during the glucose oxidation. Large effective area, good conductivity, and biocompatibility properties of ZnO nanorods are the key features in this highly sensitive and stable biosensor. Our measurements showed that the threshold voltage of transistor was about 0.75 V. The current increased in the presence of the glucose and exhibited a dynamic linear range with the logarithm of glucose concentration in the range between 0.01 and 5 mM. The detection limit was about 3.8 μM. |
| doi_str_mv | 10.1007/s10008-017-3716-y |
| format | Article |
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Glucose oxidase was immobilized on the surface of the ZnO nanorods and the fabricated device was used as a four-electrode glucose biosensor. The resistance of the conductive channel was affected by addition of glucose. The applied bias voltage to the gate in the fabricated device affects the channel resistance in the same manner as the increase of enzymatic products during the glucose oxidation. Large effective area, good conductivity, and biocompatibility properties of ZnO nanorods are the key features in this highly sensitive and stable biosensor. Our measurements showed that the threshold voltage of transistor was about 0.75 V. The current increased in the presence of the glucose and exhibited a dynamic linear range with the logarithm of glucose concentration in the range between 0.01 and 5 mM. The detection limit was about 3.8 μM.</description><identifier>ISSN: 1432-8488</identifier><identifier>EISSN: 1433-0768</identifier><identifier>DOI: 10.1007/s10008-017-3716-y</identifier><language>eng</language><publisher>Berlin/Heidelberg: Springer Berlin Heidelberg</publisher><subject>Analytical Chemistry ; Biocompatibility ; Biosensors ; Characterization and Evaluation of Materials ; Chemistry ; Chemistry and Materials Science ; Condensed Matter Physics ; Conductivity ; Electrochemistry ; Electrodes ; Energy Storage ; Field effect transistors ; Glucose ; Glucose oxidase ; Gold ; Nanorods ; Original Paper ; Oxidation ; Physical Chemistry ; Threshold voltage ; Transistors ; Zinc oxide</subject><ispartof>Journal of solid state electrochemistry, 2018, Vol.22 (1), p.61-67</ispartof><rights>Springer-Verlag GmbH Germany 2017</rights><rights>Copyright Springer Science & Business Media 2018</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c316t-a34d9b4ffaf6c10bf2e662525ae572c3913e7f066816826138645e36d4389d1f3</citedby><cites>FETCH-LOGICAL-c316t-a34d9b4ffaf6c10bf2e662525ae572c3913e7f066816826138645e36d4389d1f3</cites><orcidid>0000-0003-0974-7912</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://link.springer.com/content/pdf/10.1007/s10008-017-3716-y$$EPDF$$P50$$Gspringer$$H</linktopdf><linktohtml>$$Uhttps://link.springer.com/10.1007/s10008-017-3716-y$$EHTML$$P50$$Gspringer$$H</linktohtml><link.rule.ids>314,776,780,27901,27902,41464,42533,51294</link.rule.ids></links><search><creatorcontrib>Fathollahzadeh, M.</creatorcontrib><creatorcontrib>Hosseini, M.</creatorcontrib><creatorcontrib>Norouzi, M.</creatorcontrib><creatorcontrib>Ebrahimi, A.</creatorcontrib><creatorcontrib>Fathipour, M.</creatorcontrib><creatorcontrib>Kolahdouz, M.</creatorcontrib><creatorcontrib>Haghighi, B.</creatorcontrib><title>Immobilization of glucose oxidase on ZnO nanorods decorated electrolyte-gated field effect transistor for glucose detection</title><title>Journal of solid state electrochemistry</title><addtitle>J Solid State Electrochem</addtitle><description>In this paper, we report on growth of ZnO nanorods on the surface of gold interdigital electrodes and its implementation as a conductive n-type channel for the fabrication of a liquid-gated field effect transistor. Glucose oxidase was immobilized on the surface of the ZnO nanorods and the fabricated device was used as a four-electrode glucose biosensor. The resistance of the conductive channel was affected by addition of glucose. The applied bias voltage to the gate in the fabricated device affects the channel resistance in the same manner as the increase of enzymatic products during the glucose oxidation. Large effective area, good conductivity, and biocompatibility properties of ZnO nanorods are the key features in this highly sensitive and stable biosensor. Our measurements showed that the threshold voltage of transistor was about 0.75 V. The current increased in the presence of the glucose and exhibited a dynamic linear range with the logarithm of glucose concentration in the range between 0.01 and 5 mM. The detection limit was about 3.8 μM.</description><subject>Analytical Chemistry</subject><subject>Biocompatibility</subject><subject>Biosensors</subject><subject>Characterization and Evaluation of Materials</subject><subject>Chemistry</subject><subject>Chemistry and Materials Science</subject><subject>Condensed Matter Physics</subject><subject>Conductivity</subject><subject>Electrochemistry</subject><subject>Electrodes</subject><subject>Energy Storage</subject><subject>Field effect transistors</subject><subject>Glucose</subject><subject>Glucose oxidase</subject><subject>Gold</subject><subject>Nanorods</subject><subject>Original Paper</subject><subject>Oxidation</subject><subject>Physical Chemistry</subject><subject>Threshold voltage</subject><subject>Transistors</subject><subject>Zinc oxide</subject><issn>1432-8488</issn><issn>1433-0768</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2018</creationdate><recordtype>article</recordtype><recordid>eNp1UMtKAzEUDaJgrX6Au4DraO4kk8kspfgoFLrRjZuQTpIyZTqpSQqO_rxpR8GNi_vg3vOAg9A10FugtLqLuVNJKFSEVSDIcIImwBkjtBLy9LgXRHIpz9FFjBuagQLoBH3Nt1u_arv2U6fW99g7vO72jY8W-4_W6MPs8Vu_xL3uffAmYmMbH3SyBtvONin4bkiWrI8X19ou353LD5yC7mMbkw_Y5frVNTblbza7RGdOd9Fe_cwpen18eJk9k8XyaT67X5CGgUhEM27qFXdOO9EAXbnCClGURaltWRUNq4HZylEhJAhZCGBS8NIyYTiTtQHHpuhm1N0F_763MamN34c-WyqoJeNQg-QZBSOqCT7GYJ3ahXarw6CAqkPGasxY5ejUIWM1ZE4xcmLG9msb_ij_S_oGG2-BdQ</recordid><startdate>2018</startdate><enddate>2018</enddate><creator>Fathollahzadeh, M.</creator><creator>Hosseini, M.</creator><creator>Norouzi, M.</creator><creator>Ebrahimi, A.</creator><creator>Fathipour, M.</creator><creator>Kolahdouz, M.</creator><creator>Haghighi, B.</creator><general>Springer Berlin Heidelberg</general><general>Springer Nature B.V</general><scope>AAYXX</scope><scope>CITATION</scope><orcidid>https://orcid.org/0000-0003-0974-7912</orcidid></search><sort><creationdate>2018</creationdate><title>Immobilization of glucose oxidase on ZnO nanorods decorated electrolyte-gated field effect transistor for glucose detection</title><author>Fathollahzadeh, M. ; Hosseini, M. ; Norouzi, M. ; Ebrahimi, A. ; Fathipour, M. ; Kolahdouz, M. ; Haghighi, B.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c316t-a34d9b4ffaf6c10bf2e662525ae572c3913e7f066816826138645e36d4389d1f3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2018</creationdate><topic>Analytical Chemistry</topic><topic>Biocompatibility</topic><topic>Biosensors</topic><topic>Characterization and Evaluation of Materials</topic><topic>Chemistry</topic><topic>Chemistry and Materials Science</topic><topic>Condensed Matter Physics</topic><topic>Conductivity</topic><topic>Electrochemistry</topic><topic>Electrodes</topic><topic>Energy Storage</topic><topic>Field effect transistors</topic><topic>Glucose</topic><topic>Glucose oxidase</topic><topic>Gold</topic><topic>Nanorods</topic><topic>Original Paper</topic><topic>Oxidation</topic><topic>Physical Chemistry</topic><topic>Threshold voltage</topic><topic>Transistors</topic><topic>Zinc oxide</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Fathollahzadeh, M.</creatorcontrib><creatorcontrib>Hosseini, M.</creatorcontrib><creatorcontrib>Norouzi, M.</creatorcontrib><creatorcontrib>Ebrahimi, A.</creatorcontrib><creatorcontrib>Fathipour, M.</creatorcontrib><creatorcontrib>Kolahdouz, M.</creatorcontrib><creatorcontrib>Haghighi, B.</creatorcontrib><collection>CrossRef</collection><jtitle>Journal of solid state electrochemistry</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Fathollahzadeh, M.</au><au>Hosseini, M.</au><au>Norouzi, M.</au><au>Ebrahimi, A.</au><au>Fathipour, M.</au><au>Kolahdouz, M.</au><au>Haghighi, B.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Immobilization of glucose oxidase on ZnO nanorods decorated electrolyte-gated field effect transistor for glucose detection</atitle><jtitle>Journal of solid state electrochemistry</jtitle><stitle>J Solid State Electrochem</stitle><date>2018</date><risdate>2018</risdate><volume>22</volume><issue>1</issue><spage>61</spage><epage>67</epage><pages>61-67</pages><issn>1432-8488</issn><eissn>1433-0768</eissn><abstract>In this paper, we report on growth of ZnO nanorods on the surface of gold interdigital electrodes and its implementation as a conductive n-type channel for the fabrication of a liquid-gated field effect transistor. Glucose oxidase was immobilized on the surface of the ZnO nanorods and the fabricated device was used as a four-electrode glucose biosensor. The resistance of the conductive channel was affected by addition of glucose. The applied bias voltage to the gate in the fabricated device affects the channel resistance in the same manner as the increase of enzymatic products during the glucose oxidation. Large effective area, good conductivity, and biocompatibility properties of ZnO nanorods are the key features in this highly sensitive and stable biosensor. Our measurements showed that the threshold voltage of transistor was about 0.75 V. The current increased in the presence of the glucose and exhibited a dynamic linear range with the logarithm of glucose concentration in the range between 0.01 and 5 mM. 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| subjects | Analytical Chemistry Biocompatibility Biosensors Characterization and Evaluation of Materials Chemistry Chemistry and Materials Science Condensed Matter Physics Conductivity Electrochemistry Electrodes Energy Storage Field effect transistors Glucose Glucose oxidase Gold Nanorods Original Paper Oxidation Physical Chemistry Threshold voltage Transistors Zinc oxide |
| title | Immobilization of glucose oxidase on ZnO nanorods decorated electrolyte-gated field effect transistor for glucose detection |
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