Opto-Electronic Properties of Cu2ZnSnS4 Thin Films Grown by Ultrasonic Spray Pyrolysis
Cu 2 ZnSnS 4 (CZTS) films are deposited by ultrasonic spray pyrolysis technique for photovoltaic applications. The optoelectronic properties are studied by varying Zn and Sn compositions in the film. Films showed a tetragonal kesterite structure with preferential orientation along the (112) plane. T...
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| Veröffentlicht in: | Journal of electronic materials 2018, Vol.47 (1), p.530-535 |
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| creator | Deepa, K. G. Sajeesh, T. H. Jampana, Nagaraju |
| description | Cu
2
ZnSnS
4
(CZTS) films are deposited by ultrasonic spray pyrolysis technique for photovoltaic applications. The optoelectronic properties are studied by varying Zn and Sn compositions in the film. Films showed a tetragonal kesterite structure with preferential orientation along the (112) plane. The sample with the highest Cu concentration showed the lowest band gap of 1.46 eV. The grain size of the films is greater than 1
μ
m. Temperature-dependent conductivity studies revealed the presence of defects such as V
Cu
, V
S
, V
Sn
, Cu
Zn
, Zn
Cu
, Zn
Sn
and Sn
Zn
in the films. The sample with a Cu/(Zn + Sn) ratio of 0.75 showed Cu-poor and Zn-rich composition and better opto-electronic properties. The sample has
p
-type conductivity with a resistivity of 12 Ω cm. A [V
Cu
–Zn
Cu
] defect complex is identified in this sample along with a Zn
Sn
acceptor level which is favorable for solar cells. |
| doi_str_mv | 10.1007/s11664-017-5803-3 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_journals_1979946074</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>1979946074</sourcerecordid><originalsourceid>FETCH-LOGICAL-c316t-92adc23154db0f9e923e2d21f5e4012046c3b2edbf24393d5dac1943a0de6d1f3</originalsourceid><addsrcrecordid>eNp1kEFLwzAYhoMoOKc_wFvAczRfkqbLUcY2hcEG20S8hLZJtKNratIh_fd21oMXT9_lfd7340HoFug9UJo-RAApBaGQkmRCOeFnaASJ4AQm8vUcjSiXQBLGk0t0FeOeUkhgAiP0smpaT2aVLdrg67LA6-AbG9rSRuwdnh7ZW72pNwJvP8oaz8vqEPEi-K8a5x3eVW3I4g-2aULW4XUXfNXFMl6jC5dV0d783jHazWfb6RNZrhbP08clKTjIliiWmYLx_lGTU6esYtwyw8AlVlBgVMiC58ya3DHBFTeJyQpQgmfUWGnA8TG6G3qb4D-PNrZ674-h7ic1qFQpIWkq-hQMqSL4GIN1ugnlIQudBqpP-vSgT_f69Emf5j3DBib22frdhj_N_0Lfpy5yYw</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>1979946074</pqid></control><display><type>article</type><title>Opto-Electronic Properties of Cu2ZnSnS4 Thin Films Grown by Ultrasonic Spray Pyrolysis</title><source>Springer Nature - Complete Springer Journals</source><creator>Deepa, K. G. ; Sajeesh, T. H. ; Jampana, Nagaraju</creator><creatorcontrib>Deepa, K. G. ; Sajeesh, T. H. ; Jampana, Nagaraju</creatorcontrib><description>Cu
2
ZnSnS
4
(CZTS) films are deposited by ultrasonic spray pyrolysis technique for photovoltaic applications. The optoelectronic properties are studied by varying Zn and Sn compositions in the film. Films showed a tetragonal kesterite structure with preferential orientation along the (112) plane. The sample with the highest Cu concentration showed the lowest band gap of 1.46 eV. The grain size of the films is greater than 1
μ
m. Temperature-dependent conductivity studies revealed the presence of defects such as V
Cu
, V
S
, V
Sn
, Cu
Zn
, Zn
Cu
, Zn
Sn
and Sn
Zn
in the films. The sample with a Cu/(Zn + Sn) ratio of 0.75 showed Cu-poor and Zn-rich composition and better opto-electronic properties. The sample has
p
-type conductivity with a resistivity of 12 Ω cm. A [V
Cu
–Zn
Cu
] defect complex is identified in this sample along with a Zn
Sn
acceptor level which is favorable for solar cells.</description><identifier>ISSN: 0361-5235</identifier><identifier>EISSN: 1543-186X</identifier><identifier>DOI: 10.1007/s11664-017-5803-3</identifier><language>eng</language><publisher>New York: Springer US</publisher><subject>Characterization and Evaluation of Materials ; Chemistry and Materials Science ; Copper ; Copper zinc tin sulfide ; Crystal defects ; Electronic properties ; Electronics and Microelectronics ; Instrumentation ; Materials Science ; Optical and Electronic Materials ; Optoelectronics ; Photovoltaic cells ; Solar cells ; Solid State Physics ; Spray pyrolysis ; Thin films</subject><ispartof>Journal of electronic materials, 2018, Vol.47 (1), p.530-535</ispartof><rights>The Minerals, Metals & Materials Society 2017</rights><rights>Journal of Electronic Materials is a copyright of Springer, (2017). All Rights Reserved.</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c316t-92adc23154db0f9e923e2d21f5e4012046c3b2edbf24393d5dac1943a0de6d1f3</citedby><cites>FETCH-LOGICAL-c316t-92adc23154db0f9e923e2d21f5e4012046c3b2edbf24393d5dac1943a0de6d1f3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://link.springer.com/content/pdf/10.1007/s11664-017-5803-3$$EPDF$$P50$$Gspringer$$H</linktopdf><linktohtml>$$Uhttps://link.springer.com/10.1007/s11664-017-5803-3$$EHTML$$P50$$Gspringer$$H</linktohtml><link.rule.ids>314,776,780,27903,27904,41467,42536,51298</link.rule.ids></links><search><creatorcontrib>Deepa, K. G.</creatorcontrib><creatorcontrib>Sajeesh, T. H.</creatorcontrib><creatorcontrib>Jampana, Nagaraju</creatorcontrib><title>Opto-Electronic Properties of Cu2ZnSnS4 Thin Films Grown by Ultrasonic Spray Pyrolysis</title><title>Journal of electronic materials</title><addtitle>Journal of Elec Materi</addtitle><description>Cu
2
ZnSnS
4
(CZTS) films are deposited by ultrasonic spray pyrolysis technique for photovoltaic applications. The optoelectronic properties are studied by varying Zn and Sn compositions in the film. Films showed a tetragonal kesterite structure with preferential orientation along the (112) plane. The sample with the highest Cu concentration showed the lowest band gap of 1.46 eV. The grain size of the films is greater than 1
μ
m. Temperature-dependent conductivity studies revealed the presence of defects such as V
Cu
, V
S
, V
Sn
, Cu
Zn
, Zn
Cu
, Zn
Sn
and Sn
Zn
in the films. The sample with a Cu/(Zn + Sn) ratio of 0.75 showed Cu-poor and Zn-rich composition and better opto-electronic properties. The sample has
p
-type conductivity with a resistivity of 12 Ω cm. A [V
Cu
–Zn
Cu
] defect complex is identified in this sample along with a Zn
Sn
acceptor level which is favorable for solar cells.</description><subject>Characterization and Evaluation of Materials</subject><subject>Chemistry and Materials Science</subject><subject>Copper</subject><subject>Copper zinc tin sulfide</subject><subject>Crystal defects</subject><subject>Electronic properties</subject><subject>Electronics and Microelectronics</subject><subject>Instrumentation</subject><subject>Materials Science</subject><subject>Optical and Electronic Materials</subject><subject>Optoelectronics</subject><subject>Photovoltaic cells</subject><subject>Solar cells</subject><subject>Solid State Physics</subject><subject>Spray pyrolysis</subject><subject>Thin films</subject><issn>0361-5235</issn><issn>1543-186X</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2018</creationdate><recordtype>article</recordtype><sourceid>8G5</sourceid><sourceid>ABUWG</sourceid><sourceid>AFKRA</sourceid><sourceid>AZQEC</sourceid><sourceid>BENPR</sourceid><sourceid>CCPQU</sourceid><sourceid>DWQXO</sourceid><sourceid>GNUQQ</sourceid><sourceid>GUQSH</sourceid><sourceid>M2O</sourceid><recordid>eNp1kEFLwzAYhoMoOKc_wFvAczRfkqbLUcY2hcEG20S8hLZJtKNratIh_fd21oMXT9_lfd7340HoFug9UJo-RAApBaGQkmRCOeFnaASJ4AQm8vUcjSiXQBLGk0t0FeOeUkhgAiP0smpaT2aVLdrg67LA6-AbG9rSRuwdnh7ZW72pNwJvP8oaz8vqEPEi-K8a5x3eVW3I4g-2aULW4XUXfNXFMl6jC5dV0d783jHazWfb6RNZrhbP08clKTjIliiWmYLx_lGTU6esYtwyw8AlVlBgVMiC58ya3DHBFTeJyQpQgmfUWGnA8TG6G3qb4D-PNrZ674-h7ic1qFQpIWkq-hQMqSL4GIN1ugnlIQudBqpP-vSgT_f69Emf5j3DBib22frdhj_N_0Lfpy5yYw</recordid><startdate>2018</startdate><enddate>2018</enddate><creator>Deepa, K. 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G. ; Sajeesh, T. H. ; Jampana, Nagaraju</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c316t-92adc23154db0f9e923e2d21f5e4012046c3b2edbf24393d5dac1943a0de6d1f3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2018</creationdate><topic>Characterization and Evaluation of Materials</topic><topic>Chemistry and Materials Science</topic><topic>Copper</topic><topic>Copper zinc tin sulfide</topic><topic>Crystal defects</topic><topic>Electronic properties</topic><topic>Electronics and Microelectronics</topic><topic>Instrumentation</topic><topic>Materials Science</topic><topic>Optical and Electronic Materials</topic><topic>Optoelectronics</topic><topic>Photovoltaic cells</topic><topic>Solar cells</topic><topic>Solid State Physics</topic><topic>Spray pyrolysis</topic><topic>Thin films</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Deepa, K. G.</creatorcontrib><creatorcontrib>Sajeesh, T. H.</creatorcontrib><creatorcontrib>Jampana, Nagaraju</creatorcontrib><collection>CrossRef</collection><collection>ProQuest Central (Corporate)</collection><collection>ProQuest Central (purchase pre-March 2016)</collection><collection>Science Database (Alumni Edition)</collection><collection>STEM Database</collection><collection>ProQuest Pharma Collection</collection><collection>ProQuest SciTech Collection</collection><collection>ProQuest Technology Collection</collection><collection>ProQuest Central (Alumni) (purchase pre-March 2016)</collection><collection>Research Library (Alumni Edition)</collection><collection>Materials Science & Engineering Collection</collection><collection>ProQuest Central (Alumni Edition)</collection><collection>ProQuest Central UK/Ireland</collection><collection>Advanced Technologies & Aerospace Collection</collection><collection>ProQuest Central Essentials</collection><collection>ProQuest Central</collection><collection>Technology Collection</collection><collection>ProQuest One Community College</collection><collection>ProQuest Materials Science Collection</collection><collection>ProQuest Central Korea</collection><collection>ProQuest Central Student</collection><collection>Research Library Prep</collection><collection>SciTech Premium Collection</collection><collection>Materials Science Database</collection><collection>ProQuest Engineering Collection</collection><collection>Research Library</collection><collection>Science Database</collection><collection>Engineering Database</collection><collection>Research Library (Corporate)</collection><collection>Advanced Technologies & Aerospace Database</collection><collection>ProQuest Advanced Technologies & Aerospace Collection</collection><collection>Materials Science Collection</collection><collection>ProQuest One Academic Eastern Edition (DO NOT USE)</collection><collection>ProQuest One Academic</collection><collection>ProQuest One Academic UKI Edition</collection><collection>ProQuest Central China</collection><collection>Engineering Collection</collection><collection>ProQuest Central Basic</collection><collection>SIRS Editorial</collection><jtitle>Journal of electronic materials</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Deepa, K. G.</au><au>Sajeesh, T. H.</au><au>Jampana, Nagaraju</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Opto-Electronic Properties of Cu2ZnSnS4 Thin Films Grown by Ultrasonic Spray Pyrolysis</atitle><jtitle>Journal of electronic materials</jtitle><stitle>Journal of Elec Materi</stitle><date>2018</date><risdate>2018</risdate><volume>47</volume><issue>1</issue><spage>530</spage><epage>535</epage><pages>530-535</pages><issn>0361-5235</issn><eissn>1543-186X</eissn><abstract>Cu
2
ZnSnS
4
(CZTS) films are deposited by ultrasonic spray pyrolysis technique for photovoltaic applications. The optoelectronic properties are studied by varying Zn and Sn compositions in the film. Films showed a tetragonal kesterite structure with preferential orientation along the (112) plane. The sample with the highest Cu concentration showed the lowest band gap of 1.46 eV. The grain size of the films is greater than 1
μ
m. Temperature-dependent conductivity studies revealed the presence of defects such as V
Cu
, V
S
, V
Sn
, Cu
Zn
, Zn
Cu
, Zn
Sn
and Sn
Zn
in the films. The sample with a Cu/(Zn + Sn) ratio of 0.75 showed Cu-poor and Zn-rich composition and better opto-electronic properties. The sample has
p
-type conductivity with a resistivity of 12 Ω cm. A [V
Cu
–Zn
Cu
] defect complex is identified in this sample along with a Zn
Sn
acceptor level which is favorable for solar cells.</abstract><cop>New York</cop><pub>Springer US</pub><doi>10.1007/s11664-017-5803-3</doi><tpages>6</tpages></addata></record> |
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| ispartof | Journal of electronic materials, 2018, Vol.47 (1), p.530-535 |
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| source | Springer Nature - Complete Springer Journals |
| subjects | Characterization and Evaluation of Materials Chemistry and Materials Science Copper Copper zinc tin sulfide Crystal defects Electronic properties Electronics and Microelectronics Instrumentation Materials Science Optical and Electronic Materials Optoelectronics Photovoltaic cells Solar cells Solid State Physics Spray pyrolysis Thin films |
| title | Opto-Electronic Properties of Cu2ZnSnS4 Thin Films Grown by Ultrasonic Spray Pyrolysis |
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