Surface and buried interface layer studies on challenging structures as studied by ARXPS

Previous extensive studies were performed at Surface Science Western on the treatment of III‐V semiconductors to produce surfaces suitable for subsequent epitaxial growth. X‐ray photoelectron spectroscopy (XPS) was used to study oxide formation and capping techniques, and to monitor changes that wou...

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Veröffentlicht in:	Surface and interface analysis 2017-12, Vol.49 (13), p.1309-1315
Hauptverfasser:	Sodhi, Rana N. S., Brodersen, Peter, Cademartiri, Ludovico, Thuo, Martin M., Nijhuis, Christian A.
Format:	Artikel
Sprache:	eng
Schlagworte:	buried Interfaces Buried structures Dielectric properties Epitaxial growth Gallium gallium indium eutectic Group III-V semiconductors III‐V semiconductors Interfacial properties non‐destructive depth profiling parallel angle‐resolved XPS Photoelectrons Semiconductors Silicon nitride Spectrum analysis Thickness Thin films X ray photoelectron spectroscopy X-rays
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