Annealing effect of the InAs dot-in-well structure grown by MBE

•Annealing effect has been studied for the InAs dot-in-well structure.•The QDs with large size in DWELL are vulnerable to the annealing process above 550 °C.•Lasing wavelength of 1.31 μm was achieved by growing the top cladding layer at 540 °C.•Lasing wavelength of 1.18 μm was obtained by growing th...

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