Silicon-catalyzed growth of amorphous SiO x nanowires by continuous-wave laser ablation of SiO in high-pressure gas

Continuous-wave laser ablation of an SiO target was performed to grow nanowires (NWs) in high-pressure (up to 0.90 MPa) Ar, N2, and O2 gas. In Ar gas, the fraction of the NWs in deposits was changed significantly by the Ar pressure. As Ar pressure increased, thicker NWs with diameters of up to 80 nm...

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Veröffentlicht in:	Applied physics. A, Materials science & processing Materials science & processing, 2018-01, Vol.124 (1), p.1-11, Article 40
Hauptverfasser:	Kokai, Fumio, Sawada, Naoki, Hatano, Kazuya, Koshio, Akira
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied physics Disproportionation Laser ablation Lasers Materials science Nanoparticles Nanowires Silicon Supersaturation Thin films Tips
Online-Zugang:	Volltext
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