Light-induced lifetime degradation in high-performance multicrystalline silicon: Detailed kinetics of the defect activation

We examine the defect activation kinetics in block-cast high-performance multicrystalline silicon (HP mc-Si) under illumination at elevated temperature. Our lifetime analysis shows that the observed light-induced lifetime degradation consists of two separate stages: a fast stage followed by a slow s...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Veröffentlicht in:	Solar energy materials and solar cells 2017-12, Vol.173, p.2-5
Hauptverfasser:	Bredemeier, Dennis, Walter, Dominic, Schmidt, Jan
Format:	Artikel
Sprache:	eng
Schlagworte:	Activation energy Carrier lifetime Decay rate Defects Degradation High temperature Kinetics Light Light intensity Luminous intensity Multicrystalline silicon Photodegradation Photovoltaic cells Polycrystals Rate constants Silicon Temperature effects
Online-Zugang:	Volltext
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Schreiben Sie den ersten Kommentar!