Recent insights into boron-oxygen related degradation: Evidence of a single defect

Fast and slow boron-oxygen related degradation in p-type Czochralski silicon is often attributed to two separate defects due to the different time constants and the determination of different capture cross section ratios (k). However, recent work has suggested the possible involvement of a single de...

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Veröffentlicht in:	Solar energy materials and solar cells 2017-12, Vol.173, p.25-32
Hauptverfasser:	Hallam, Brett, Kim, Moonyong, Abbott, Malcolm, Nampalli, Nitin, Nærland, Tine, Stefani, Bruno, Wenham, Stuart
Format:	Artikel
Sprache:	eng
Schlagworte:	Absorption cross sections Annealing Boron Boron-oxygen Carrier lifetime Carrier-induced degradation Czochralski silicon Deactivation Defects Degradation Iron Light-induced degradation Oxygen Recombination Silicon
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