On the equilibrium concentration of boron-oxygen defects in crystalline silicon

We determine the equilibrium concentration of the BO defect in boron-doped Czochralski-grown silicon after prolonged (up to 150h) annealing at relatively low temperatures between 200 and 300°C. We show that after sample processing, the BO concentration has not necessarily reached the equilibrium sta...

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Veröffentlicht in:	Solar energy materials and solar cells 2017-12, Vol.173, p.33-36
Hauptverfasser:	Walter, D.C., Falster, R., Voronkov, V.V., Schmidt, J.
Format:	Artikel
Sprache:	eng
Schlagworte:	Annealing Boron Boron-oxygen defects Carrier lifetime Crystal defects Czochralski silicon Light effects Low temperature Oxygen Photodegradation Silicon Temperature effects
Online-Zugang:	Volltext
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