Selective etching of Si, SiGe, Ge and its usage for increasing the efficiency of silicon solar cells

Dependences of the etch rates for KOH and HF:H 2 O 2 :CH 3 COOH solutions on SiGe layer composition were investigated. The obtained results has been proposed to use for formation of the submicron relief on the silicon surface via selective etching of the structures with Ge(Si) self-assembled nanoisl...

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Veröffentlicht in:	Semiconductors (Woodbury, N.Y.) N.Y.), 2017-12, Vol.51 (12), p.1542-1546
Hauptverfasser:	Baidakova, N. A., Verbus, V. A., Morozova, E. E., Novikov, A. V., Skorohodov, E. V., Shaleev, M. V., Yurasov, D. V., Hombe, A., Kurokawa, Y., Usami, N.
Format:	Artikel
Sprache:	eng
Schlagworte:	2017 Etching Germanium Hydrogen peroxide Isopropanol Magnetic Materials Magnetism March 13–16 Nizhny Novgorod Photovoltaic cells Physics Physics and Astronomy Self-assembly Silicon Silicon compounds Silicon germanides Solar cells Thin films XXI International Symposium “Nanophysics and Nanoelectronics”
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