Selective etching of Si, SiGe, Ge and its usage for increasing the efficiency of silicon solar cells
Dependences of the etch rates for KOH and HF:H 2 O 2 :CH 3 COOH solutions on SiGe layer composition were investigated. The obtained results has been proposed to use for formation of the submicron relief on the silicon surface via selective etching of the structures with Ge(Si) self-assembled nanoisl...
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| Veröffentlicht in: | Semiconductors (Woodbury, N.Y.) N.Y.), 2017-12, Vol.51 (12), p.1542-1546 |
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| container_title | Semiconductors (Woodbury, N.Y.) |
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| creator | Baidakova, N. A. Verbus, V. A. Morozova, E. E. Novikov, A. V. Skorohodov, E. V. Shaleev, M. V. Yurasov, D. V. Hombe, A. Kurokawa, Y. Usami, N. |
| description | Dependences of the etch rates for KOH and HF:H
2
O
2
:CH
3
COOH solutions on SiGe layer composition were investigated. The obtained results has been proposed to use for formation of the submicron relief on the silicon surface via selective etching of the structures with Ge(Si) self-assembled nanoislands. In the framework of the proposed approach the Ge(Si) nanoislands serve as a mask for selective etching of Si in a mixture of an aqueous solution of KOH with isopropyl alcohol, followed by the islands removal from the surface by the selective etching in HF:H
2
O
2
:CH
3
COOH. It was demonstrated experimentally that such approach allows to produce the submicron relief on a silicon surface, which leads to the significant decrease of the reflectivity in a wide spectral range. It is believed that the proposed method of surface relief formation can be used to improve the efficiency of the thin-film solar cells based on the crystalline silicon. |
| doi_str_mv | 10.1134/S1063782617120028 |
| format | Article |
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2
O
2
:CH
3
COOH solutions on SiGe layer composition were investigated. The obtained results has been proposed to use for formation of the submicron relief on the silicon surface via selective etching of the structures with Ge(Si) self-assembled nanoislands. In the framework of the proposed approach the Ge(Si) nanoislands serve as a mask for selective etching of Si in a mixture of an aqueous solution of KOH with isopropyl alcohol, followed by the islands removal from the surface by the selective etching in HF:H
2
O
2
:CH
3
COOH. It was demonstrated experimentally that such approach allows to produce the submicron relief on a silicon surface, which leads to the significant decrease of the reflectivity in a wide spectral range. It is believed that the proposed method of surface relief formation can be used to improve the efficiency of the thin-film solar cells based on the crystalline silicon.</description><identifier>ISSN: 1063-7826</identifier><identifier>EISSN: 1090-6479</identifier><identifier>DOI: 10.1134/S1063782617120028</identifier><language>eng</language><publisher>Moscow: Pleiades Publishing</publisher><subject>2017 ; Etching ; Germanium ; Hydrogen peroxide ; Isopropanol ; Magnetic Materials ; Magnetism ; March 13–16 ; Nizhny Novgorod ; Photovoltaic cells ; Physics ; Physics and Astronomy ; Self-assembly ; Silicon ; Silicon compounds ; Silicon germanides ; Solar cells ; Thin films ; XXI International Symposium “Nanophysics and Nanoelectronics”</subject><ispartof>Semiconductors (Woodbury, N.Y.), 2017-12, Vol.51 (12), p.1542-1546</ispartof><rights>Pleiades Publishing, Ltd. 2017</rights><rights>COPYRIGHT 2017 Springer</rights><rights>Copyright Springer Science & Business Media 2017</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c421t-1bd816db4edb467173d513bef9a55736c7742f93908b6d3845aff7a8fefffd453</citedby><cites>FETCH-LOGICAL-c421t-1bd816db4edb467173d513bef9a55736c7742f93908b6d3845aff7a8fefffd453</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://link.springer.com/content/pdf/10.1134/S1063782617120028$$EPDF$$P50$$Gspringer$$H</linktopdf><linktohtml>$$Uhttps://link.springer.com/10.1134/S1063782617120028$$EHTML$$P50$$Gspringer$$H</linktohtml><link.rule.ids>314,776,780,27901,27902,41464,42533,51294</link.rule.ids></links><search><creatorcontrib>Baidakova, N. A.</creatorcontrib><creatorcontrib>Verbus, V. A.</creatorcontrib><creatorcontrib>Morozova, E. E.</creatorcontrib><creatorcontrib>Novikov, A. V.</creatorcontrib><creatorcontrib>Skorohodov, E. V.</creatorcontrib><creatorcontrib>Shaleev, M. V.</creatorcontrib><creatorcontrib>Yurasov, D. V.</creatorcontrib><creatorcontrib>Hombe, A.</creatorcontrib><creatorcontrib>Kurokawa, Y.</creatorcontrib><creatorcontrib>Usami, N.</creatorcontrib><title>Selective etching of Si, SiGe, Ge and its usage for increasing the efficiency of silicon solar cells</title><title>Semiconductors (Woodbury, N.Y.)</title><addtitle>Semiconductors</addtitle><description>Dependences of the etch rates for KOH and HF:H
2
O
2
:CH
3
COOH solutions on SiGe layer composition were investigated. The obtained results has been proposed to use for formation of the submicron relief on the silicon surface via selective etching of the structures with Ge(Si) self-assembled nanoislands. In the framework of the proposed approach the Ge(Si) nanoislands serve as a mask for selective etching of Si in a mixture of an aqueous solution of KOH with isopropyl alcohol, followed by the islands removal from the surface by the selective etching in HF:H
2
O
2
:CH
3
COOH. It was demonstrated experimentally that such approach allows to produce the submicron relief on a silicon surface, which leads to the significant decrease of the reflectivity in a wide spectral range. It is believed that the proposed method of surface relief formation can be used to improve the efficiency of the thin-film solar cells based on the crystalline silicon.</description><subject>2017</subject><subject>Etching</subject><subject>Germanium</subject><subject>Hydrogen peroxide</subject><subject>Isopropanol</subject><subject>Magnetic Materials</subject><subject>Magnetism</subject><subject>March 13–16</subject><subject>Nizhny Novgorod</subject><subject>Photovoltaic cells</subject><subject>Physics</subject><subject>Physics and Astronomy</subject><subject>Self-assembly</subject><subject>Silicon</subject><subject>Silicon compounds</subject><subject>Silicon germanides</subject><subject>Solar cells</subject><subject>Thin films</subject><subject>XXI International Symposium “Nanophysics and Nanoelectronics”</subject><issn>1063-7826</issn><issn>1090-6479</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2017</creationdate><recordtype>article</recordtype><recordid>eNp1kFFLwzAUhYMoOKc_wLeAr-vMbdKkfRxDpzDwYfpc0vRmy-jamXTC_r0p9UEQuRxuSM53c7iE3AObA3DxuAEmucpTCQpSxtL8gkyAFSyRQhWXw1nyZHi_Jjch7BkDyDMxIfUGGzS9-0KKvdm5dks7SzduFrXCGV0h1W1NXR_oKegtUtt56lrjUYfB3O8iaK0zDltzHtjgGme6loau0Z4abJpwS66sbgLe_fQp-Xh-el--JOu31etysU6MSKFPoKpzkHUlMEoqULzOgFdoC51likujlEhtwQuWV7Lmuci0tUrnNgawtcj4lDyMc4---zxh6Mt9d_Jt_LKEQgmQkvE8uuaja6sbLF1ru95rE6vGw5AcrYv3iyyFrAAJRQRgBIzvQvBoy6N3B-3PJbBy2H75Z_uRSUcmRG-7Rf8ryr_QN7IshUc</recordid><startdate>20171201</startdate><enddate>20171201</enddate><creator>Baidakova, N. A.</creator><creator>Verbus, V. A.</creator><creator>Morozova, E. E.</creator><creator>Novikov, A. V.</creator><creator>Skorohodov, E. V.</creator><creator>Shaleev, M. V.</creator><creator>Yurasov, D. V.</creator><creator>Hombe, A.</creator><creator>Kurokawa, Y.</creator><creator>Usami, N.</creator><general>Pleiades Publishing</general><general>Springer</general><general>Springer Nature B.V</general><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>20171201</creationdate><title>Selective etching of Si, SiGe, Ge and its usage for increasing the efficiency of silicon solar cells</title><author>Baidakova, N. A. ; Verbus, V. A. ; Morozova, E. E. ; Novikov, A. V. ; Skorohodov, E. V. ; Shaleev, M. V. ; Yurasov, D. V. ; Hombe, A. ; Kurokawa, Y. ; Usami, N.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c421t-1bd816db4edb467173d513bef9a55736c7742f93908b6d3845aff7a8fefffd453</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2017</creationdate><topic>2017</topic><topic>Etching</topic><topic>Germanium</topic><topic>Hydrogen peroxide</topic><topic>Isopropanol</topic><topic>Magnetic Materials</topic><topic>Magnetism</topic><topic>March 13–16</topic><topic>Nizhny Novgorod</topic><topic>Photovoltaic cells</topic><topic>Physics</topic><topic>Physics and Astronomy</topic><topic>Self-assembly</topic><topic>Silicon</topic><topic>Silicon compounds</topic><topic>Silicon germanides</topic><topic>Solar cells</topic><topic>Thin films</topic><topic>XXI International Symposium “Nanophysics and Nanoelectronics”</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Baidakova, N. A.</creatorcontrib><creatorcontrib>Verbus, V. A.</creatorcontrib><creatorcontrib>Morozova, E. E.</creatorcontrib><creatorcontrib>Novikov, A. V.</creatorcontrib><creatorcontrib>Skorohodov, E. V.</creatorcontrib><creatorcontrib>Shaleev, M. V.</creatorcontrib><creatorcontrib>Yurasov, D. V.</creatorcontrib><creatorcontrib>Hombe, A.</creatorcontrib><creatorcontrib>Kurokawa, Y.</creatorcontrib><creatorcontrib>Usami, N.</creatorcontrib><collection>CrossRef</collection><jtitle>Semiconductors (Woodbury, N.Y.)</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Baidakova, N. A.</au><au>Verbus, V. A.</au><au>Morozova, E. E.</au><au>Novikov, A. V.</au><au>Skorohodov, E. V.</au><au>Shaleev, M. V.</au><au>Yurasov, D. V.</au><au>Hombe, A.</au><au>Kurokawa, Y.</au><au>Usami, N.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Selective etching of Si, SiGe, Ge and its usage for increasing the efficiency of silicon solar cells</atitle><jtitle>Semiconductors (Woodbury, N.Y.)</jtitle><stitle>Semiconductors</stitle><date>2017-12-01</date><risdate>2017</risdate><volume>51</volume><issue>12</issue><spage>1542</spage><epage>1546</epage><pages>1542-1546</pages><issn>1063-7826</issn><eissn>1090-6479</eissn><abstract>Dependences of the etch rates for KOH and HF:H
2
O
2
:CH
3
COOH solutions on SiGe layer composition were investigated. The obtained results has been proposed to use for formation of the submicron relief on the silicon surface via selective etching of the structures with Ge(Si) self-assembled nanoislands. In the framework of the proposed approach the Ge(Si) nanoislands serve as a mask for selective etching of Si in a mixture of an aqueous solution of KOH with isopropyl alcohol, followed by the islands removal from the surface by the selective etching in HF:H
2
O
2
:CH
3
COOH. It was demonstrated experimentally that such approach allows to produce the submicron relief on a silicon surface, which leads to the significant decrease of the reflectivity in a wide spectral range. It is believed that the proposed method of surface relief formation can be used to improve the efficiency of the thin-film solar cells based on the crystalline silicon.</abstract><cop>Moscow</cop><pub>Pleiades Publishing</pub><doi>10.1134/S1063782617120028</doi><tpages>5</tpages></addata></record> |
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| subjects | 2017 Etching Germanium Hydrogen peroxide Isopropanol Magnetic Materials Magnetism March 13–16 Nizhny Novgorod Photovoltaic cells Physics Physics and Astronomy Self-assembly Silicon Silicon compounds Silicon germanides Solar cells Thin films XXI International Symposium “Nanophysics and Nanoelectronics” |
| title | Selective etching of Si, SiGe, Ge and its usage for increasing the efficiency of silicon solar cells |
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