Polarization switching in undoped and La-doped TlInS^sub 2^ ferroelectric-semiconductors

Polarization switching in undoped and La-doped TlInS^sub 2^ ferroelectric-semiconductors

Dielectric hysteresis loops of pure and lanthanum doped TlInS2 ferroelectric-semiconductors were studied at the frequency 50 Hz for different temperatures below the Curie temperature (Tc). It has been revealed that, without any poling procedure, pure TlInS2 exhibits normal single hysteresis loops at...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Physica. B, Condensed matter Condensed matter, 2017-12, Vol.526, p.45
Hauptverfasser: Seyidov, MirHasan Yu, Mikailzade, Faik A, Suleymanov, Rauf A, Aliyeva, Vafa B, Mammadov, Tofig G, Sharifov, Galib M
Format: Artikel
Sprache:eng
Schlagworte:
Curie temperature
Defects
Deoxidizing
Dielectrics
Electric fields
Ferroelectric materials
Ferroelectricity
Ferroelectrics
Hysteresis loops
Lanthanum
Polarization
Semiconductors
Shape memory
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:Dielectric hysteresis loops of pure and lanthanum doped TlInS2 ferroelectric-semiconductors were studied at the frequency 50 Hz for different temperatures below the Curie temperature (Tc). It has been revealed that, without any poling procedure, pure TlInS2 exhibits normal single hysteresis loops at T
ISSN:0921-4526
1873-2135