Effect of the carrier gas on morphological, optical and electrical properties of SnO2 nanostructures prepared by vapor transport
The aim of the study was to explore the effects of carrier gas on the properties of SnO 2 nanostructures grown by vapor transport method for possible optoelectronic applications. Nanostructures of SnO 2 were synthesized via vapor transport method using Ar plus O 2 and N 2 plus O 2 gas mixtures. It w...
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| Veröffentlicht in: | Journal of materials science. Materials in electronics 2018-03, Vol.29 (5), p.4155-4162 |
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| creator | Hadia, N. M. A. Hasaneen, M. F. Hassan, Mohamed Asran Mohamed, S. H. |
| description | The aim of the study was to explore the effects of carrier gas on the properties of SnO
2
nanostructures grown by vapor transport method for possible optoelectronic applications. Nanostructures of SnO
2
were synthesized via vapor transport method using Ar plus O
2
and N
2
plus O
2
gas mixtures. It was found that the carrier gas (Ar or N
2
) has great influences on the properties of the resulting SnO
2
nanostructures. Tetragonal single phase SnO
2
with nanowires (NWs) morphologies was obtained for Ar/O
2
. The diameters of the NWs ranged from 10 to 162 nm and the lengths exceed 5 µm. While tetragonal single phase SnO
2
with nanoparticles morphologies (diameters of 42–173 nm) was obtained for N
2
/O
2
. The calculated optical band gap values were 3.81 and 2.95 eV for samples prepared with Ar/O
2
and N
2
/O
2
, respectively. The conduction mechanism in the samples was found to be thermally activated. Single activation energy of 0.49 eV was evaluated for the sample prepared in Ar/O
2
, while two activation energies (E
AL
= 1.48 eV and E
Ah
= 0.83 eV) were obtained for the sample prepared with N
2
/O
2
. The photoluminescence emission (intensity and shape) depended on the carrier gas. The observed emission peaks were assigned to the oxygen vacancies and the oxygen related defects. The obtained results may find applications in optoelectronics such as light emitting diodes. |
| doi_str_mv | 10.1007/s10854-017-8360-x |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_journals_1971141363</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>1971141363</sourcerecordid><originalsourceid>FETCH-LOGICAL-c316t-1d7d7afaff61240bc2667ae2ba6cb943eb13c6fde5e6d7e457658ca8145e19313</originalsourceid><addsrcrecordid>eNp1kD1LBDEQhoMoeJ7-ALuArauZTTbZK0X8AsFCBbuQzU7Ok3OzTnKinT_dnGdhYzUfvO87w8PYIYgTEMKcJhBtoyoBpmqlFtXHFptAY2Sl2vppm03ErDGVaup6l-2l9CKE0Eq2E_Z1EQL6zGPg-Rm5d0QLJD53iceBv0Yan-MyzhfeLY95HPO64W7oOS6LjX7GkeKIlBeY1jH3w13NBzfElGnl84rKeiQcHWHPu0_-7sZIPJMbUmnyPtsJbpnw4LdO2ePlxcP5dXV7d3VzfnZbeQk6V9Cb3rjgQtBQK9H5WmvjsO6c9t1MSexAeh16bFD3BlVjdNN614JqEGYS5JQdbXLLt28rTNm-xBUN5aSFmQFQILUsKtioPMWUCIMdafHq6NOCsGvQdgPaFtB2Ddp-FE-98aSiHeZIf5L_NX0DP82EHw</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>1971141363</pqid></control><display><type>article</type><title>Effect of the carrier gas on morphological, optical and electrical properties of SnO2 nanostructures prepared by vapor transport</title><source>Springer Online Journals</source><creator>Hadia, N. M. A. ; Hasaneen, M. F. ; Hassan, Mohamed Asran ; Mohamed, S. H.</creator><creatorcontrib>Hadia, N. M. A. ; Hasaneen, M. F. ; Hassan, Mohamed Asran ; Mohamed, S. H.</creatorcontrib><description>The aim of the study was to explore the effects of carrier gas on the properties of SnO
2
nanostructures grown by vapor transport method for possible optoelectronic applications. Nanostructures of SnO
2
were synthesized via vapor transport method using Ar plus O
2
and N
2
plus O
2
gas mixtures. It was found that the carrier gas (Ar or N
2
) has great influences on the properties of the resulting SnO
2
nanostructures. Tetragonal single phase SnO
2
with nanowires (NWs) morphologies was obtained for Ar/O
2
. The diameters of the NWs ranged from 10 to 162 nm and the lengths exceed 5 µm. While tetragonal single phase SnO
2
with nanoparticles morphologies (diameters of 42–173 nm) was obtained for N
2
/O
2
. The calculated optical band gap values were 3.81 and 2.95 eV for samples prepared with Ar/O
2
and N
2
/O
2
, respectively. The conduction mechanism in the samples was found to be thermally activated. Single activation energy of 0.49 eV was evaluated for the sample prepared in Ar/O
2
, while two activation energies (E
AL
= 1.48 eV and E
Ah
= 0.83 eV) were obtained for the sample prepared with N
2
/O
2
. The photoluminescence emission (intensity and shape) depended on the carrier gas. The observed emission peaks were assigned to the oxygen vacancies and the oxygen related defects. The obtained results may find applications in optoelectronics such as light emitting diodes.</description><identifier>ISSN: 0957-4522</identifier><identifier>EISSN: 1573-482X</identifier><identifier>DOI: 10.1007/s10854-017-8360-x</identifier><language>eng</language><publisher>New York: Springer US</publisher><subject>Activation energy ; Characterization and Evaluation of Materials ; Chemistry and Materials Science ; Defects ; Electrical properties ; Emission ; Gas mixtures ; Lattice vacancies ; Light emitting diodes ; Materials Science ; Morphology ; Nanoparticles ; Nanostructure ; Nanowires ; Nitrogen ; Optical and Electronic Materials ; Optical properties ; Optoelectronics ; Organic light emitting diodes ; Photoluminescence ; Tin dioxide ; Transport</subject><ispartof>Journal of materials science. Materials in electronics, 2018-03, Vol.29 (5), p.4155-4162</ispartof><rights>Springer Science+Business Media, LLC, part of Springer Nature 2017</rights><rights>Journal of Materials Science: Materials in Electronics is a copyright of Springer, (2017). All Rights Reserved.</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c316t-1d7d7afaff61240bc2667ae2ba6cb943eb13c6fde5e6d7e457658ca8145e19313</citedby><cites>FETCH-LOGICAL-c316t-1d7d7afaff61240bc2667ae2ba6cb943eb13c6fde5e6d7e457658ca8145e19313</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://link.springer.com/content/pdf/10.1007/s10854-017-8360-x$$EPDF$$P50$$Gspringer$$H</linktopdf><linktohtml>$$Uhttps://link.springer.com/10.1007/s10854-017-8360-x$$EHTML$$P50$$Gspringer$$H</linktohtml><link.rule.ids>314,776,780,27901,27902,41464,42533,51294</link.rule.ids></links><search><creatorcontrib>Hadia, N. M. A.</creatorcontrib><creatorcontrib>Hasaneen, M. F.</creatorcontrib><creatorcontrib>Hassan, Mohamed Asran</creatorcontrib><creatorcontrib>Mohamed, S. H.</creatorcontrib><title>Effect of the carrier gas on morphological, optical and electrical properties of SnO2 nanostructures prepared by vapor transport</title><title>Journal of materials science. Materials in electronics</title><addtitle>J Mater Sci: Mater Electron</addtitle><description>The aim of the study was to explore the effects of carrier gas on the properties of SnO
2
nanostructures grown by vapor transport method for possible optoelectronic applications. Nanostructures of SnO
2
were synthesized via vapor transport method using Ar plus O
2
and N
2
plus O
2
gas mixtures. It was found that the carrier gas (Ar or N
2
) has great influences on the properties of the resulting SnO
2
nanostructures. Tetragonal single phase SnO
2
with nanowires (NWs) morphologies was obtained for Ar/O
2
. The diameters of the NWs ranged from 10 to 162 nm and the lengths exceed 5 µm. While tetragonal single phase SnO
2
with nanoparticles morphologies (diameters of 42–173 nm) was obtained for N
2
/O
2
. The calculated optical band gap values were 3.81 and 2.95 eV for samples prepared with Ar/O
2
and N
2
/O
2
, respectively. The conduction mechanism in the samples was found to be thermally activated. Single activation energy of 0.49 eV was evaluated for the sample prepared in Ar/O
2
, while two activation energies (E
AL
= 1.48 eV and E
Ah
= 0.83 eV) were obtained for the sample prepared with N
2
/O
2
. The photoluminescence emission (intensity and shape) depended on the carrier gas. The observed emission peaks were assigned to the oxygen vacancies and the oxygen related defects. The obtained results may find applications in optoelectronics such as light emitting diodes.</description><subject>Activation energy</subject><subject>Characterization and Evaluation of Materials</subject><subject>Chemistry and Materials Science</subject><subject>Defects</subject><subject>Electrical properties</subject><subject>Emission</subject><subject>Gas mixtures</subject><subject>Lattice vacancies</subject><subject>Light emitting diodes</subject><subject>Materials Science</subject><subject>Morphology</subject><subject>Nanoparticles</subject><subject>Nanostructure</subject><subject>Nanowires</subject><subject>Nitrogen</subject><subject>Optical and Electronic Materials</subject><subject>Optical properties</subject><subject>Optoelectronics</subject><subject>Organic light emitting diodes</subject><subject>Photoluminescence</subject><subject>Tin dioxide</subject><subject>Transport</subject><issn>0957-4522</issn><issn>1573-482X</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2018</creationdate><recordtype>article</recordtype><sourceid>BENPR</sourceid><recordid>eNp1kD1LBDEQhoMoeJ7-ALuArauZTTbZK0X8AsFCBbuQzU7Ok3OzTnKinT_dnGdhYzUfvO87w8PYIYgTEMKcJhBtoyoBpmqlFtXHFptAY2Sl2vppm03ErDGVaup6l-2l9CKE0Eq2E_Z1EQL6zGPg-Rm5d0QLJD53iceBv0Yan-MyzhfeLY95HPO64W7oOS6LjX7GkeKIlBeY1jH3w13NBzfElGnl84rKeiQcHWHPu0_-7sZIPJMbUmnyPtsJbpnw4LdO2ePlxcP5dXV7d3VzfnZbeQk6V9Cb3rjgQtBQK9H5WmvjsO6c9t1MSexAeh16bFD3BlVjdNN614JqEGYS5JQdbXLLt28rTNm-xBUN5aSFmQFQILUsKtioPMWUCIMdafHq6NOCsGvQdgPaFtB2Ddp-FE-98aSiHeZIf5L_NX0DP82EHw</recordid><startdate>20180301</startdate><enddate>20180301</enddate><creator>Hadia, N. M. A.</creator><creator>Hasaneen, M. F.</creator><creator>Hassan, Mohamed Asran</creator><creator>Mohamed, S. H.</creator><general>Springer US</general><general>Springer Nature B.V</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>7SR</scope><scope>8BQ</scope><scope>8FD</scope><scope>8FE</scope><scope>8FG</scope><scope>ABJCF</scope><scope>AFKRA</scope><scope>ARAPS</scope><scope>BENPR</scope><scope>BGLVJ</scope><scope>CCPQU</scope><scope>D1I</scope><scope>DWQXO</scope><scope>F28</scope><scope>FR3</scope><scope>HCIFZ</scope><scope>JG9</scope><scope>KB.</scope><scope>L7M</scope><scope>P5Z</scope><scope>P62</scope><scope>PDBOC</scope><scope>PHGZM</scope><scope>PHGZT</scope><scope>PKEHL</scope><scope>PQEST</scope><scope>PQGLB</scope><scope>PQQKQ</scope><scope>PQUKI</scope><scope>PRINS</scope><scope>S0W</scope></search><sort><creationdate>20180301</creationdate><title>Effect of the carrier gas on morphological, optical and electrical properties of SnO2 nanostructures prepared by vapor transport</title><author>Hadia, N. M. A. ; Hasaneen, M. F. ; Hassan, Mohamed Asran ; Mohamed, S. H.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c316t-1d7d7afaff61240bc2667ae2ba6cb943eb13c6fde5e6d7e457658ca8145e19313</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2018</creationdate><topic>Activation energy</topic><topic>Characterization and Evaluation of Materials</topic><topic>Chemistry and Materials Science</topic><topic>Defects</topic><topic>Electrical properties</topic><topic>Emission</topic><topic>Gas mixtures</topic><topic>Lattice vacancies</topic><topic>Light emitting diodes</topic><topic>Materials Science</topic><topic>Morphology</topic><topic>Nanoparticles</topic><topic>Nanostructure</topic><topic>Nanowires</topic><topic>Nitrogen</topic><topic>Optical and Electronic Materials</topic><topic>Optical properties</topic><topic>Optoelectronics</topic><topic>Organic light emitting diodes</topic><topic>Photoluminescence</topic><topic>Tin dioxide</topic><topic>Transport</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Hadia, N. M. A.</creatorcontrib><creatorcontrib>Hasaneen, M. F.</creatorcontrib><creatorcontrib>Hassan, Mohamed Asran</creatorcontrib><creatorcontrib>Mohamed, S. H.</creatorcontrib><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Engineered Materials Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>ProQuest SciTech Collection</collection><collection>ProQuest Technology Collection</collection><collection>Materials Science & Engineering Collection</collection><collection>ProQuest Central UK/Ireland</collection><collection>Advanced Technologies & Aerospace Collection</collection><collection>ProQuest Central</collection><collection>Technology Collection</collection><collection>ProQuest One Community College</collection><collection>ProQuest Materials Science Collection</collection><collection>ProQuest Central</collection><collection>ANTE: Abstracts in New Technology & Engineering</collection><collection>Engineering Research Database</collection><collection>SciTech Premium Collection (Proquest) (PQ_SDU_P3)</collection><collection>Materials Research Database</collection><collection>Materials Science Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>ProQuest advanced technologies & aerospace journals</collection><collection>ProQuest Advanced Technologies & Aerospace Collection</collection><collection>Materials Science Collection</collection><collection>ProQuest Central (New)</collection><collection>ProQuest One Academic (New)</collection><collection>ProQuest One Academic Middle East (New)</collection><collection>ProQuest One Academic Eastern Edition (DO NOT USE)</collection><collection>ProQuest One Applied & Life Sciences</collection><collection>ProQuest One Academic</collection><collection>ProQuest One Academic UKI Edition</collection><collection>ProQuest Central China</collection><collection>DELNET Engineering & Technology Collection</collection><jtitle>Journal of materials science. Materials in electronics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Hadia, N. M. A.</au><au>Hasaneen, M. F.</au><au>Hassan, Mohamed Asran</au><au>Mohamed, S. H.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Effect of the carrier gas on morphological, optical and electrical properties of SnO2 nanostructures prepared by vapor transport</atitle><jtitle>Journal of materials science. Materials in electronics</jtitle><stitle>J Mater Sci: Mater Electron</stitle><date>2018-03-01</date><risdate>2018</risdate><volume>29</volume><issue>5</issue><spage>4155</spage><epage>4162</epage><pages>4155-4162</pages><issn>0957-4522</issn><eissn>1573-482X</eissn><abstract>The aim of the study was to explore the effects of carrier gas on the properties of SnO
2
nanostructures grown by vapor transport method for possible optoelectronic applications. Nanostructures of SnO
2
were synthesized via vapor transport method using Ar plus O
2
and N
2
plus O
2
gas mixtures. It was found that the carrier gas (Ar or N
2
) has great influences on the properties of the resulting SnO
2
nanostructures. Tetragonal single phase SnO
2
with nanowires (NWs) morphologies was obtained for Ar/O
2
. The diameters of the NWs ranged from 10 to 162 nm and the lengths exceed 5 µm. While tetragonal single phase SnO
2
with nanoparticles morphologies (diameters of 42–173 nm) was obtained for N
2
/O
2
. The calculated optical band gap values were 3.81 and 2.95 eV for samples prepared with Ar/O
2
and N
2
/O
2
, respectively. The conduction mechanism in the samples was found to be thermally activated. Single activation energy of 0.49 eV was evaluated for the sample prepared in Ar/O
2
, while two activation energies (E
AL
= 1.48 eV and E
Ah
= 0.83 eV) were obtained for the sample prepared with N
2
/O
2
. The photoluminescence emission (intensity and shape) depended on the carrier gas. The observed emission peaks were assigned to the oxygen vacancies and the oxygen related defects. The obtained results may find applications in optoelectronics such as light emitting diodes.</abstract><cop>New York</cop><pub>Springer US</pub><doi>10.1007/s10854-017-8360-x</doi><tpages>8</tpages></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0957-4522 |
| ispartof | Journal of materials science. Materials in electronics, 2018-03, Vol.29 (5), p.4155-4162 |
| issn | 0957-4522 1573-482X |
| language | eng |
| recordid | cdi_proquest_journals_1971141363 |
| source | Springer Online Journals |
| subjects | Activation energy Characterization and Evaluation of Materials Chemistry and Materials Science Defects Electrical properties Emission Gas mixtures Lattice vacancies Light emitting diodes Materials Science Morphology Nanoparticles Nanostructure Nanowires Nitrogen Optical and Electronic Materials Optical properties Optoelectronics Organic light emitting diodes Photoluminescence Tin dioxide Transport |
| title | Effect of the carrier gas on morphological, optical and electrical properties of SnO2 nanostructures prepared by vapor transport |
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