Pressure driven semi-metallic phase transition of Sb^sub 2^Te^sub 3
Herein, we report on the intriguing electrical transport properties of compressed Sb2Te3, a topological insulator. A significant anomaly in Hall coefficient at 3.4 GPa reveals an electronic topological transition deriving from topological morphology changes of Van Hove singularity. Pressure dependen...
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| Veröffentlicht in: | Materials letters 2017-12, Vol.209, p.78 |
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| creator | Zhang, Junkai Hu, Tingjing Yan, Jiejuan Ke, Feng Wang, Jingshu Cui, Xiaoyan Li, Xuefei Ma, Yanzhang Yang, Jinghai Gao, Chunxiao |
| description | Herein, we report on the intriguing electrical transport properties of compressed Sb2Te3, a topological insulator. A significant anomaly in Hall coefficient at 3.4 GPa reveals an electronic topological transition deriving from topological morphology changes of Van Hove singularity. Pressure dependent resistivity, Hall coefficient, carrier concentration, and mobility show discontinuous changes at 10.6, 15.2, and 20.8 GPa, i.e., close to the onset of structural phase transitions of Sb2Te3. Moreover, Hall-effect probing discerns the change of conductive mechanism from the lattice vibration dominated to substitutional alloy conduction guiding at 20.8 GPa. Variable-temperature resistivity measurement reveals the transformation from the semi-conductive to semi-metallic phase around 9.0 GPa despite that Sb2Te3 has the priority to hole conduction till 28.2 GPa, indicating that the topological nontrivial properties of Sb2Te3 will be destroyed via pressure effect beyond 9.0 GPa. Definite conductive phase diagram sheds a new light on building Sb2Te3-based application of the future. |
| format | Article |
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A significant anomaly in Hall coefficient at 3.4 GPa reveals an electronic topological transition deriving from topological morphology changes of Van Hove singularity. Pressure dependent resistivity, Hall coefficient, carrier concentration, and mobility show discontinuous changes at 10.6, 15.2, and 20.8 GPa, i.e., close to the onset of structural phase transitions of Sb2Te3. Moreover, Hall-effect probing discerns the change of conductive mechanism from the lattice vibration dominated to substitutional alloy conduction guiding at 20.8 GPa. Variable-temperature resistivity measurement reveals the transformation from the semi-conductive to semi-metallic phase around 9.0 GPa despite that Sb2Te3 has the priority to hole conduction till 28.2 GPa, indicating that the topological nontrivial properties of Sb2Te3 will be destroyed via pressure effect beyond 9.0 GPa. Definite conductive phase diagram sheds a new light on building Sb2Te3-based application of the future.</description><identifier>ISSN: 0167-577X</identifier><identifier>EISSN: 1873-4979</identifier><language>eng</language><publisher>Amsterdam: Elsevier BV</publisher><subject>Alloys ; Antimony ; Carrier density ; Electrical resistivity ; Hall effect ; Lattice vibration ; Materials science ; Mathematical morphology ; Phase transitions ; Pressure ; Temperature</subject><ispartof>Materials letters, 2017-12, Vol.209, p.78</ispartof><rights>Copyright Elsevier BV Dec 15, 2017</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,776,780</link.rule.ids></links><search><creatorcontrib>Zhang, Junkai</creatorcontrib><creatorcontrib>Hu, Tingjing</creatorcontrib><creatorcontrib>Yan, Jiejuan</creatorcontrib><creatorcontrib>Ke, Feng</creatorcontrib><creatorcontrib>Wang, Jingshu</creatorcontrib><creatorcontrib>Cui, Xiaoyan</creatorcontrib><creatorcontrib>Li, Xuefei</creatorcontrib><creatorcontrib>Ma, Yanzhang</creatorcontrib><creatorcontrib>Yang, Jinghai</creatorcontrib><creatorcontrib>Gao, Chunxiao</creatorcontrib><title>Pressure driven semi-metallic phase transition of Sb^sub 2^Te^sub 3</title><title>Materials letters</title><description>Herein, we report on the intriguing electrical transport properties of compressed Sb2Te3, a topological insulator. A significant anomaly in Hall coefficient at 3.4 GPa reveals an electronic topological transition deriving from topological morphology changes of Van Hove singularity. Pressure dependent resistivity, Hall coefficient, carrier concentration, and mobility show discontinuous changes at 10.6, 15.2, and 20.8 GPa, i.e., close to the onset of structural phase transitions of Sb2Te3. Moreover, Hall-effect probing discerns the change of conductive mechanism from the lattice vibration dominated to substitutional alloy conduction guiding at 20.8 GPa. Variable-temperature resistivity measurement reveals the transformation from the semi-conductive to semi-metallic phase around 9.0 GPa despite that Sb2Te3 has the priority to hole conduction till 28.2 GPa, indicating that the topological nontrivial properties of Sb2Te3 will be destroyed via pressure effect beyond 9.0 GPa. Definite conductive phase diagram sheds a new light on building Sb2Te3-based application of the future.</description><subject>Alloys</subject><subject>Antimony</subject><subject>Carrier density</subject><subject>Electrical resistivity</subject><subject>Hall effect</subject><subject>Lattice vibration</subject><subject>Materials science</subject><subject>Mathematical morphology</subject><subject>Phase transitions</subject><subject>Pressure</subject><subject>Temperature</subject><issn>0167-577X</issn><issn>1873-4979</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2017</creationdate><recordtype>article</recordtype><recordid>eNqNiksKwjAUAIMoWD93CLgOpKY2ybooLgVduGpJ9RVT2qTmNZ5fEQ_gagZmJiRJlRQs01JPScLTXLKdlNc5WSC2nPNM8ywhxSkAYgxA78G-wFGE3rIeRtN19kaHh0GgYzAO7Wi9o76h57rEWNNteYGviBWZNaZDWP-4JJvD_lIc2RD8MwKOVetjcJ9UpTpXWimhtfjvegMOozuH</recordid><startdate>20171215</startdate><enddate>20171215</enddate><creator>Zhang, Junkai</creator><creator>Hu, Tingjing</creator><creator>Yan, Jiejuan</creator><creator>Ke, Feng</creator><creator>Wang, Jingshu</creator><creator>Cui, Xiaoyan</creator><creator>Li, Xuefei</creator><creator>Ma, Yanzhang</creator><creator>Yang, Jinghai</creator><creator>Gao, Chunxiao</creator><general>Elsevier BV</general><scope>7SR</scope><scope>8BQ</scope><scope>8FD</scope><scope>JG9</scope></search><sort><creationdate>20171215</creationdate><title>Pressure driven semi-metallic phase transition of Sb^sub 2^Te^sub 3</title><author>Zhang, Junkai ; Hu, Tingjing ; Yan, Jiejuan ; Ke, Feng ; Wang, Jingshu ; Cui, Xiaoyan ; Li, Xuefei ; Ma, Yanzhang ; Yang, Jinghai ; Gao, Chunxiao</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-proquest_journals_19689883993</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2017</creationdate><topic>Alloys</topic><topic>Antimony</topic><topic>Carrier density</topic><topic>Electrical resistivity</topic><topic>Hall effect</topic><topic>Lattice vibration</topic><topic>Materials science</topic><topic>Mathematical morphology</topic><topic>Phase transitions</topic><topic>Pressure</topic><topic>Temperature</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Zhang, Junkai</creatorcontrib><creatorcontrib>Hu, Tingjing</creatorcontrib><creatorcontrib>Yan, Jiejuan</creatorcontrib><creatorcontrib>Ke, Feng</creatorcontrib><creatorcontrib>Wang, Jingshu</creatorcontrib><creatorcontrib>Cui, Xiaoyan</creatorcontrib><creatorcontrib>Li, Xuefei</creatorcontrib><creatorcontrib>Ma, Yanzhang</creatorcontrib><creatorcontrib>Yang, Jinghai</creatorcontrib><creatorcontrib>Gao, Chunxiao</creatorcontrib><collection>Engineered Materials Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><jtitle>Materials letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Zhang, Junkai</au><au>Hu, Tingjing</au><au>Yan, Jiejuan</au><au>Ke, Feng</au><au>Wang, Jingshu</au><au>Cui, Xiaoyan</au><au>Li, Xuefei</au><au>Ma, Yanzhang</au><au>Yang, Jinghai</au><au>Gao, Chunxiao</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Pressure driven semi-metallic phase transition of Sb^sub 2^Te^sub 3</atitle><jtitle>Materials letters</jtitle><date>2017-12-15</date><risdate>2017</risdate><volume>209</volume><spage>78</spage><pages>78-</pages><issn>0167-577X</issn><eissn>1873-4979</eissn><abstract>Herein, we report on the intriguing electrical transport properties of compressed Sb2Te3, a topological insulator. A significant anomaly in Hall coefficient at 3.4 GPa reveals an electronic topological transition deriving from topological morphology changes of Van Hove singularity. Pressure dependent resistivity, Hall coefficient, carrier concentration, and mobility show discontinuous changes at 10.6, 15.2, and 20.8 GPa, i.e., close to the onset of structural phase transitions of Sb2Te3. Moreover, Hall-effect probing discerns the change of conductive mechanism from the lattice vibration dominated to substitutional alloy conduction guiding at 20.8 GPa. Variable-temperature resistivity measurement reveals the transformation from the semi-conductive to semi-metallic phase around 9.0 GPa despite that Sb2Te3 has the priority to hole conduction till 28.2 GPa, indicating that the topological nontrivial properties of Sb2Te3 will be destroyed via pressure effect beyond 9.0 GPa. Definite conductive phase diagram sheds a new light on building Sb2Te3-based application of the future.</abstract><cop>Amsterdam</cop><pub>Elsevier BV</pub></addata></record> |
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| language | eng |
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| source | Elsevier ScienceDirect Journals |
| subjects | Alloys Antimony Carrier density Electrical resistivity Hall effect Lattice vibration Materials science Mathematical morphology Phase transitions Pressure Temperature |
| title | Pressure driven semi-metallic phase transition of Sb^sub 2^Te^sub 3 |
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