Temperature controlled fabrication of chemically synthesized cubic In2O3 crystallites for improved photoelectrochemical water oxidation

The present paper describes the development of indium (III) oxide (In2O3) semiconductor (SC) through chemical bath synthesis using In(NO3)3 as a precursor followed by annealing in air at various high temperatures (600–900 °C). Thin films were prepared over F-doped tin oxide (FTO) coated glass substr...

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Veröffentlicht in:	Materials chemistry and physics 2017-11, Vol.201, p.7-17
Hauptverfasser:	Sariket, Debasis, Shyamal, Sanjib, Hajra, Paramita, Mandal, Harahari, Bera, Aparajita, Maity, Arjun, Kundu, Sukumar, Bhattacharya, Chinmoy
Format:	Artikel
Sprache:	eng
Schlagworte:	Absorption spectra Action spectra Annealing Band gap Chemical bath synthesis Chemical compounds Chemical synthesis Crystallites Electrochemical impedance spectroscopy Electron microscopy Emission spectra Ethylene glycol Glass substrates In2O3 semiconductor Indium oxides N-type semiconductors Oxidation Oxygen evolution reactions Photoelectrochemical water oxidation Photoluminescence spectra Semiconductors Temperature Thin films Tin oxides
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