Effects of the Bi2O3-SiO2 addition on the sintering behavior and microwave dielectric properties of Zn1.8SiO3.8 ceramics
The effects of Bi2O3-SiO2 addition (denoted as BS) on the microstructure and microwave dielectric properties of Zn1.8SiO3.8 (denoted as ZS) ceramics have been investigated. It's proved that the addition of BS not only decreases the densification temperature effectively, but also contributes to...
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| Veröffentlicht in: | Journal of alloys and compounds 2017-11, Vol.725, p.1063-1068 |
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| container_title | Journal of alloys and compounds |
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| creator | Weng, Zhangzhao AminiRastabi, Habibollah Xiong, Zhaoxian Xue, Hao |
| description | The effects of Bi2O3-SiO2 addition (denoted as BS) on the microstructure and microwave dielectric properties of Zn1.8SiO3.8 (denoted as ZS) ceramics have been investigated. It's proved that the addition of BS not only decreases the densification temperature effectively, but also contributes to the well microwave dielectric properties of ZS ceramics by the formation of Bi4(SiO4)3 phase at a low sintering temperature. In particular, when BS content was 20.0 wt%, the BS-added ceramics sintered at 875 °C for 2 h exhibited a low dielectric constant(Ɛr) of 6.78, a high quality factor(Q×f) of 28,742 GHz (at 15.7 GHz) and the temperature coefficient(τf) of the resonant frequency of −22.6 ppm/°C, which demonstrated a potential candidate for application of LTCC multilayer technology in millimeters and THz range.
•BS addition decreases the densification temperature of ZS ceramics effectively.•The formation of Bi4(SiO4)3 phase contributes to the well microwave dielectric properties.•BS addition shows nearly nonreactivity with ZS ceramics. |
| doi_str_mv | 10.1016/j.jallcom.2017.07.252 |
| format | Article |
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•BS addition decreases the densification temperature of ZS ceramics effectively.•The formation of Bi4(SiO4)3 phase contributes to the well microwave dielectric properties.•BS addition shows nearly nonreactivity with ZS ceramics.</description><identifier>ISSN: 0925-8388</identifier><identifier>EISSN: 1873-4669</identifier><identifier>DOI: 10.1016/j.jallcom.2017.07.252</identifier><language>eng</language><publisher>Lausanne: Elsevier B.V</publisher><subject>Bismuth oxides ; Ceramics ; Densification ; Dielectric properties ; Glass ; Glass/ceramic composites ; LTCC ; Microstructure ; Microwave properties ; Q factors ; Silicon dioxide ; Sintering ; Willemite</subject><ispartof>Journal of alloys and compounds, 2017-11, Vol.725, p.1063-1068</ispartof><rights>2017 Elsevier B.V.</rights><rights>Copyright Elsevier BV Nov 25, 2017</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c337t-659d5b455ec5a4bb1907d93ccce6d64d517fd58d9fea27aa82300509f88ca5093</citedby><cites>FETCH-LOGICAL-c337t-659d5b455ec5a4bb1907d93ccce6d64d517fd58d9fea27aa82300509f88ca5093</cites><orcidid>0000-0001-8554-3570</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://www.sciencedirect.com/science/article/pii/S0925838817326282$$EHTML$$P50$$Gelsevier$$H</linktohtml><link.rule.ids>314,776,780,3537,27901,27902,65306</link.rule.ids></links><search><creatorcontrib>Weng, Zhangzhao</creatorcontrib><creatorcontrib>AminiRastabi, Habibollah</creatorcontrib><creatorcontrib>Xiong, Zhaoxian</creatorcontrib><creatorcontrib>Xue, Hao</creatorcontrib><title>Effects of the Bi2O3-SiO2 addition on the sintering behavior and microwave dielectric properties of Zn1.8SiO3.8 ceramics</title><title>Journal of alloys and compounds</title><description>The effects of Bi2O3-SiO2 addition (denoted as BS) on the microstructure and microwave dielectric properties of Zn1.8SiO3.8 (denoted as ZS) ceramics have been investigated. It's proved that the addition of BS not only decreases the densification temperature effectively, but also contributes to the well microwave dielectric properties of ZS ceramics by the formation of Bi4(SiO4)3 phase at a low sintering temperature. In particular, when BS content was 20.0 wt%, the BS-added ceramics sintered at 875 °C for 2 h exhibited a low dielectric constant(Ɛr) of 6.78, a high quality factor(Q×f) of 28,742 GHz (at 15.7 GHz) and the temperature coefficient(τf) of the resonant frequency of −22.6 ppm/°C, which demonstrated a potential candidate for application of LTCC multilayer technology in millimeters and THz range.
•BS addition decreases the densification temperature of ZS ceramics effectively.•The formation of Bi4(SiO4)3 phase contributes to the well microwave dielectric properties.•BS addition shows nearly nonreactivity with ZS ceramics.</description><subject>Bismuth oxides</subject><subject>Ceramics</subject><subject>Densification</subject><subject>Dielectric properties</subject><subject>Glass</subject><subject>Glass/ceramic composites</subject><subject>LTCC</subject><subject>Microstructure</subject><subject>Microwave properties</subject><subject>Q factors</subject><subject>Silicon dioxide</subject><subject>Sintering</subject><subject>Willemite</subject><issn>0925-8388</issn><issn>1873-4669</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2017</creationdate><recordtype>article</recordtype><recordid>eNqFkEtLAzEQx4MoWB8fQQh43jWPzeskWnyB0IN68RLSZNZmaXdrslb99qbWuxCYQ-b_m5kfQmeU1JRQedHVnVsu_bCqGaGqJqpmgu2hCdWKV42UZh9NiGGi0lzrQ3SUc0cIoYbTCfq6aVvwY8ZDi8cF4OvIZrx6ijOGXQhxjEOPy9t-5diPkGL_huewcJs4JOz6gFfRp-HTbQCHCMvCStHjdRrWkMYIv-DXnta6MHmtsYfkSiSfoIPWLTOc_tVj9HJ78zy9rx5ndw_Tq8fKc67GSgoTxLwRArxwzXxODVHBcO89yCCbIKhqg9DBtOCYck4zToggptXau1L5MTrfcctK7x-QR9sNH6kvIy01UnHZMKlLl9h1lVtyTtDadYorl74tJXYr2Xb2T7LdSrZE2SK55C53OSgnbCIkm32E3kOIqaiwYYj_EH4AzSCH_g</recordid><startdate>20171125</startdate><enddate>20171125</enddate><creator>Weng, Zhangzhao</creator><creator>AminiRastabi, Habibollah</creator><creator>Xiong, Zhaoxian</creator><creator>Xue, Hao</creator><general>Elsevier B.V</general><general>Elsevier BV</general><scope>AAYXX</scope><scope>CITATION</scope><scope>8BQ</scope><scope>8FD</scope><scope>JG9</scope><orcidid>https://orcid.org/0000-0001-8554-3570</orcidid></search><sort><creationdate>20171125</creationdate><title>Effects of the Bi2O3-SiO2 addition on the sintering behavior and microwave dielectric properties of Zn1.8SiO3.8 ceramics</title><author>Weng, Zhangzhao ; AminiRastabi, Habibollah ; Xiong, Zhaoxian ; Xue, Hao</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c337t-659d5b455ec5a4bb1907d93ccce6d64d517fd58d9fea27aa82300509f88ca5093</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2017</creationdate><topic>Bismuth oxides</topic><topic>Ceramics</topic><topic>Densification</topic><topic>Dielectric properties</topic><topic>Glass</topic><topic>Glass/ceramic composites</topic><topic>LTCC</topic><topic>Microstructure</topic><topic>Microwave properties</topic><topic>Q factors</topic><topic>Silicon dioxide</topic><topic>Sintering</topic><topic>Willemite</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Weng, Zhangzhao</creatorcontrib><creatorcontrib>AminiRastabi, Habibollah</creatorcontrib><creatorcontrib>Xiong, Zhaoxian</creatorcontrib><creatorcontrib>Xue, Hao</creatorcontrib><collection>CrossRef</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><jtitle>Journal of alloys and compounds</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Weng, Zhangzhao</au><au>AminiRastabi, Habibollah</au><au>Xiong, Zhaoxian</au><au>Xue, Hao</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Effects of the Bi2O3-SiO2 addition on the sintering behavior and microwave dielectric properties of Zn1.8SiO3.8 ceramics</atitle><jtitle>Journal of alloys and compounds</jtitle><date>2017-11-25</date><risdate>2017</risdate><volume>725</volume><spage>1063</spage><epage>1068</epage><pages>1063-1068</pages><issn>0925-8388</issn><eissn>1873-4669</eissn><abstract>The effects of Bi2O3-SiO2 addition (denoted as BS) on the microstructure and microwave dielectric properties of Zn1.8SiO3.8 (denoted as ZS) ceramics have been investigated. It's proved that the addition of BS not only decreases the densification temperature effectively, but also contributes to the well microwave dielectric properties of ZS ceramics by the formation of Bi4(SiO4)3 phase at a low sintering temperature. In particular, when BS content was 20.0 wt%, the BS-added ceramics sintered at 875 °C for 2 h exhibited a low dielectric constant(Ɛr) of 6.78, a high quality factor(Q×f) of 28,742 GHz (at 15.7 GHz) and the temperature coefficient(τf) of the resonant frequency of −22.6 ppm/°C, which demonstrated a potential candidate for application of LTCC multilayer technology in millimeters and THz range.
•BS addition decreases the densification temperature of ZS ceramics effectively.•The formation of Bi4(SiO4)3 phase contributes to the well microwave dielectric properties.•BS addition shows nearly nonreactivity with ZS ceramics.</abstract><cop>Lausanne</cop><pub>Elsevier B.V</pub><doi>10.1016/j.jallcom.2017.07.252</doi><tpages>6</tpages><orcidid>https://orcid.org/0000-0001-8554-3570</orcidid></addata></record> |
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| subjects | Bismuth oxides Ceramics Densification Dielectric properties Glass Glass/ceramic composites LTCC Microstructure Microwave properties Q factors Silicon dioxide Sintering Willemite |
| title | Effects of the Bi2O3-SiO2 addition on the sintering behavior and microwave dielectric properties of Zn1.8SiO3.8 ceramics |
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