Impact of Electron Irradiation on N‐ and O‐Enriched FZ Silicon p‐in‐n Pad Radiation Detectors

Nitrogen and oxygen enriched FZ silicon p‐in‐n pad radiation detectors are investigated with respect to the radiation hardness. The leakage current and the charge carrier lifetime are measured before and after 1 MeV electron irradiation. Before irradiation the leakage current was found to increase d...

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Veröffentlicht in:	Physica status solidi. C 2017-11, Vol.14 (11), p.n/a
Hauptverfasser:	Lauer, Kevin, Xu, Xumei, Karolewski, Dominik, Gohs, Uwe, Kwestarz, Michael, Kaminski, Pawel, Täschner, Robert, Klein, Thomas, Wittig, Tobias, Röder, Ralf, Ortlepp, Thomas
Format:	Artikel
Sprache:	eng
Schlagworte:	Carrier lifetime Current carriers defects Electron irradiation Leakage current Nitrogen Oxygen enrichment Radiation detectors Radiation effects Silicon
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