Chemical Patterning of High‐Mobility Semiconducting 2D Bi2O2Se Crystals for Integrated Optoelectronic Devices

Patterning of high‐mobility 2D semiconducting materials with unique layered structures and superb electronic properties offers great potential for batch fabrication and integration of next‐generation electronic and optoelectronic devices. Here, a facile approach is used to achieve accurate patternin...

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Veröffentlicht in:	Advanced materials (Weinheim) 2017-11, Vol.29 (44), p.n/a
Hauptverfasser:	Wu, Jinxiong, Liu, Yujing, Tan, Zhenjun, Tan, Congwei, Yin, Jianbo, Li, Tianran, Tu, Teng, Peng, Hailin
Format:	Artikel
Sprache:	eng
Schlagworte:	2D Bi2O2Se crystals Chemical etching Crystals Dilution Electron mobility Electronic devices Etchants Hall effect high‐mobility Hydrogen peroxide integrated devices Materials science Optoelectronic devices
Online-Zugang:	Volltext
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