Chemical Patterning of High‐Mobility Semiconducting 2D Bi2O2Se Crystals for Integrated Optoelectronic Devices

Patterning of high‐mobility 2D semiconducting materials with unique layered structures and superb electronic properties offers great potential for batch fabrication and integration of next‐generation electronic and optoelectronic devices. Here, a facile approach is used to achieve accurate patterning of 2D high‐mobility semiconducting Bi2O2Se crystals using dilute H2O2 and protonic mixture acid as efficient etchants. The 2D Bi2O2Se crystal after chemical etching maintains a high Hall mobility of over 200 cm2 V−1 s−1 at room temperature. Centimeter‐scale well‐ordered arrays of 2D Bi2O2Se with tailorable configurations are readily obtained. Furthermore, integrated photodetectors based on 2D Bi2O2Se arrays are fabricated, exhibiting excellent air stability and high photoresponsivity of ≈2000 A W−1 at 532 nm. These results are one step towards the practical application of ultrathin 2D integrated digital and optoelectronic circuits. Controlled patterning of high‐mobility semiconducting two‐dimensional Bi2O2Se crystals was achieved by a facile wet‐chemical etching approach using diluted H2O2/protonic acid etchants. Centimeter‐scale well‐ordered two‐dimensional Bi2O2Se arrays exhibit a high Hall mobility of over 200 cm2 V−1 s−1 at room temperature, and are integrated into air‐stable photodetectors with an ultrahigh photoresponsivity of ≈2000 A W−1 at 532 nm.