Application of enthalpy model for floating zone silicon crystal growth

A 2D simplified crystal growth model based on the enthalpy method and coupled with a low-frequency harmonic electromagnetic model is developed to simulate the silicon crystal growth near the external triple point (ETP) and crystal melting on the open melting front of a polycrystalline feed rod in FZ crystal growth systems. Simulations of the crystal growth near the ETP show significant influence of the inhomogeneities of the EM power distribution on the crystal growth rate for a 4in floating zone (FZ) system. The generated growth rate fluctuations are shown to be larger in the system with higher crystal pull rate. Simulations of crystal melting on the open melting front of the polycrystalline rod show the development of melt-filled grooves at the open melting front surface. The distance between the grooves is shown to grow with the increase of the skin-layer depth in the solid material. •The enthalpy model was used to simulate Si crystal growth in 4in FZ growth systems.•The crystal growth in the ETP vicinity was studied.•Increase of the crystal growth fluctuations at higher crystal pull rates was shown.•The model was also used to study the open melting front on the feed rod.•Formation of stationary melt-filled groove patterns was shown.