Reduction of residual stress in AlN thin films synthesized by magnetron sputtering technique

We report the reduction in residual stress, the crystal structure, surface morphology and nano-mechanical properties of magnetron sputtered AlN thin films as a function of substrate temperature (Ts, 35–600 °C). The residual stress of these films are varying from tensile to compression with temperatu...

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Veröffentlicht in:Materials chemistry and physics 2017-10, Vol.200, p.78-84
Hauptverfasser: Panda, Padmalochan, Ramaseshan, R., Ravi, N., Mangamma, G., Jose, Feby, Dash, S., Suzuki, K., Suematsu, H.
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Sprache:eng
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