Effects of annealing temperature on nanomechanical and microstructural properties of Cu-doped In2O3 thin films
In this study, the effects of post-annealing on the microstructural, surface morphological and nanomechanical properties of Cu-doped In 2 O 3 (CIO) thin films were investigated using X-ray diffraction, scanning electron microscopy and nanoindentation techniques, respectively. The CIO thin films were...
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| Veröffentlicht in: | Applied physics. A, Materials science & processing Materials science & processing, 2017-12, Vol.123 (12), p.1-6, Article 726 |
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| creator | Jian, Sheng-Rui Chen, Guo-Ju Lee, Jyh-Wei |
| description | In this study, the effects of post-annealing on the microstructural, surface morphological and nanomechanical properties of Cu-doped In
2
O
3
(CIO) thin films were investigated using X-ray diffraction, scanning electron microscopy and nanoindentation techniques, respectively. The CIO thin films were deposited on the
c
-plane sapphire substrates at room temperature using the radio frequency magnetron sputtering system. Post-annealing was carried out at the temperatures of 750–950 °C, and resulted in progressive increase in the average grain size and improved crystallinity of CIO thin films. In addition, the hardness and Young’s modulus of CIO thin films were measured by a nanoindenter equipped with a Berkovich diamond tip and operated with the continuous contact stiffness measurements mode. Results indicated that the values of hardness and Young’s modulus of CIO thin films increased when the annealing temperature increased from 750 to 950 °C. |
| doi_str_mv | 10.1007/s00339-017-1369-4 |
| format | Article |
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2
O
3
(CIO) thin films were investigated using X-ray diffraction, scanning electron microscopy and nanoindentation techniques, respectively. The CIO thin films were deposited on the
c
-plane sapphire substrates at room temperature using the radio frequency magnetron sputtering system. Post-annealing was carried out at the temperatures of 750–950 °C, and resulted in progressive increase in the average grain size and improved crystallinity of CIO thin films. In addition, the hardness and Young’s modulus of CIO thin films were measured by a nanoindenter equipped with a Berkovich diamond tip and operated with the continuous contact stiffness measurements mode. Results indicated that the values of hardness and Young’s modulus of CIO thin films increased when the annealing temperature increased from 750 to 950 °C.</description><identifier>ISSN: 0947-8396</identifier><identifier>EISSN: 1432-0630</identifier><identifier>DOI: 10.1007/s00339-017-1369-4</identifier><language>eng</language><publisher>Berlin/Heidelberg: Springer Berlin Heidelberg</publisher><subject>Annealing ; Applied physics ; Characterization and Evaluation of Materials ; Condensed Matter Physics ; Diamond films ; Diamonds ; Indium oxides ; Machines ; Magnetron sputtering ; Manufacturing ; Materials science ; Modulus of elasticity ; Nanoindentation ; Nanoindenters ; Nanotechnology ; Optical and Electronic Materials ; Physics ; Physics and Astronomy ; Processes ; Sapphire ; Stiffness ; Substrates ; Surfaces and Interfaces ; Temperature ; Thin Films</subject><ispartof>Applied physics. A, Materials science & processing, 2017-12, Vol.123 (12), p.1-6, Article 726</ispartof><rights>Springer-Verlag GmbH Germany 2017</rights><rights>Copyright Springer Nature B.V. 2017</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c316t-d5995c20f6a3768ba324244b43e5a90c3c17351e4af19a8d9a2568ebb10b38093</citedby><cites>FETCH-LOGICAL-c316t-d5995c20f6a3768ba324244b43e5a90c3c17351e4af19a8d9a2568ebb10b38093</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://link.springer.com/content/pdf/10.1007/s00339-017-1369-4$$EPDF$$P50$$Gspringer$$H</linktopdf><linktohtml>$$Uhttps://link.springer.com/10.1007/s00339-017-1369-4$$EHTML$$P50$$Gspringer$$H</linktohtml><link.rule.ids>315,781,785,27929,27930,41493,42562,51324</link.rule.ids></links><search><creatorcontrib>Jian, Sheng-Rui</creatorcontrib><creatorcontrib>Chen, Guo-Ju</creatorcontrib><creatorcontrib>Lee, Jyh-Wei</creatorcontrib><title>Effects of annealing temperature on nanomechanical and microstructural properties of Cu-doped In2O3 thin films</title><title>Applied physics. A, Materials science & processing</title><addtitle>Appl. Phys. A</addtitle><description>In this study, the effects of post-annealing on the microstructural, surface morphological and nanomechanical properties of Cu-doped In
2
O
3
(CIO) thin films were investigated using X-ray diffraction, scanning electron microscopy and nanoindentation techniques, respectively. The CIO thin films were deposited on the
c
-plane sapphire substrates at room temperature using the radio frequency magnetron sputtering system. Post-annealing was carried out at the temperatures of 750–950 °C, and resulted in progressive increase in the average grain size and improved crystallinity of CIO thin films. In addition, the hardness and Young’s modulus of CIO thin films were measured by a nanoindenter equipped with a Berkovich diamond tip and operated with the continuous contact stiffness measurements mode. Results indicated that the values of hardness and Young’s modulus of CIO thin films increased when the annealing temperature increased from 750 to 950 °C.</description><subject>Annealing</subject><subject>Applied physics</subject><subject>Characterization and Evaluation of Materials</subject><subject>Condensed Matter Physics</subject><subject>Diamond films</subject><subject>Diamonds</subject><subject>Indium oxides</subject><subject>Machines</subject><subject>Magnetron sputtering</subject><subject>Manufacturing</subject><subject>Materials science</subject><subject>Modulus of elasticity</subject><subject>Nanoindentation</subject><subject>Nanoindenters</subject><subject>Nanotechnology</subject><subject>Optical and Electronic Materials</subject><subject>Physics</subject><subject>Physics and Astronomy</subject><subject>Processes</subject><subject>Sapphire</subject><subject>Stiffness</subject><subject>Substrates</subject><subject>Surfaces and Interfaces</subject><subject>Temperature</subject><subject>Thin Films</subject><issn>0947-8396</issn><issn>1432-0630</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2017</creationdate><recordtype>article</recordtype><recordid>eNp1kD1PwzAQhi0EEqXwA9gsMRvOH_nwiKoClSp1gdlyHLtNlTjFdgb-PS5hYOGW01nP-57vReiewiMFqJ4iAOeSAK0I5aUk4gItqOCMQMnhEi1AiorUXJbX6CbGI-QSjC2QXztnTYp4dFh7b3Xf-T1OdjjZoNMULB499tqPgzUH7Tuj-8y1eOhMGGMKk8lQfjuFMStSZ3-cVhNp89zijWc7jtOh89h1_RBv0ZXTfbR3v32JPl7W76s3st29blbPW2I4LRNpCykLw8CVmldl3WjOBBOiEdwWWoLhhla8oFZoR6WuW6lZUda2aSg0vAbJl-hh9s3_-pxsTOo4TsHnlYrKQrKK1VBnis7U-ZYYrFOn0A06fCkK6hyrmmNVOVZ1jlWJrGGzJmbW72344_yv6Bv_ZXry</recordid><startdate>20171201</startdate><enddate>20171201</enddate><creator>Jian, Sheng-Rui</creator><creator>Chen, Guo-Ju</creator><creator>Lee, Jyh-Wei</creator><general>Springer Berlin Heidelberg</general><general>Springer Nature B.V</general><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>20171201</creationdate><title>Effects of annealing temperature on nanomechanical and microstructural properties of Cu-doped In2O3 thin films</title><author>Jian, Sheng-Rui ; Chen, Guo-Ju ; Lee, Jyh-Wei</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c316t-d5995c20f6a3768ba324244b43e5a90c3c17351e4af19a8d9a2568ebb10b38093</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2017</creationdate><topic>Annealing</topic><topic>Applied physics</topic><topic>Characterization and Evaluation of Materials</topic><topic>Condensed Matter Physics</topic><topic>Diamond films</topic><topic>Diamonds</topic><topic>Indium oxides</topic><topic>Machines</topic><topic>Magnetron sputtering</topic><topic>Manufacturing</topic><topic>Materials science</topic><topic>Modulus of elasticity</topic><topic>Nanoindentation</topic><topic>Nanoindenters</topic><topic>Nanotechnology</topic><topic>Optical and Electronic Materials</topic><topic>Physics</topic><topic>Physics and Astronomy</topic><topic>Processes</topic><topic>Sapphire</topic><topic>Stiffness</topic><topic>Substrates</topic><topic>Surfaces and Interfaces</topic><topic>Temperature</topic><topic>Thin Films</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Jian, Sheng-Rui</creatorcontrib><creatorcontrib>Chen, Guo-Ju</creatorcontrib><creatorcontrib>Lee, Jyh-Wei</creatorcontrib><collection>CrossRef</collection><jtitle>Applied physics. A, Materials science & processing</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Jian, Sheng-Rui</au><au>Chen, Guo-Ju</au><au>Lee, Jyh-Wei</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Effects of annealing temperature on nanomechanical and microstructural properties of Cu-doped In2O3 thin films</atitle><jtitle>Applied physics. A, Materials science & processing</jtitle><stitle>Appl. Phys. A</stitle><date>2017-12-01</date><risdate>2017</risdate><volume>123</volume><issue>12</issue><spage>1</spage><epage>6</epage><pages>1-6</pages><artnum>726</artnum><issn>0947-8396</issn><eissn>1432-0630</eissn><abstract>In this study, the effects of post-annealing on the microstructural, surface morphological and nanomechanical properties of Cu-doped In
2
O
3
(CIO) thin films were investigated using X-ray diffraction, scanning electron microscopy and nanoindentation techniques, respectively. The CIO thin films were deposited on the
c
-plane sapphire substrates at room temperature using the radio frequency magnetron sputtering system. Post-annealing was carried out at the temperatures of 750–950 °C, and resulted in progressive increase in the average grain size and improved crystallinity of CIO thin films. In addition, the hardness and Young’s modulus of CIO thin films were measured by a nanoindenter equipped with a Berkovich diamond tip and operated with the continuous contact stiffness measurements mode. Results indicated that the values of hardness and Young’s modulus of CIO thin films increased when the annealing temperature increased from 750 to 950 °C.</abstract><cop>Berlin/Heidelberg</cop><pub>Springer Berlin Heidelberg</pub><doi>10.1007/s00339-017-1369-4</doi><tpages>6</tpages></addata></record> |
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| ispartof | Applied physics. A, Materials science & processing, 2017-12, Vol.123 (12), p.1-6, Article 726 |
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| language | eng |
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| source | SpringerNature Journals |
| subjects | Annealing Applied physics Characterization and Evaluation of Materials Condensed Matter Physics Diamond films Diamonds Indium oxides Machines Magnetron sputtering Manufacturing Materials science Modulus of elasticity Nanoindentation Nanoindenters Nanotechnology Optical and Electronic Materials Physics Physics and Astronomy Processes Sapphire Stiffness Substrates Surfaces and Interfaces Temperature Thin Films |
| title | Effects of annealing temperature on nanomechanical and microstructural properties of Cu-doped In2O3 thin films |
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