AlGaSb-Based Solar Cells Grown on GaAs: Structural Investigation and Device Performance

GaSb and alloys based on the 6.1 Å family can be grown metamorphically on substrates such as GaAs allowing for the realization of several multijunction solar cell designs. This paper investigates the molecular beam epitaxy growth, crystal quality, and device performance of Al x Ga 1-x Sb-based sing...

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Veröffentlicht in:	IEEE journal of photovoltaics 2017-11, Vol.7 (6), p.1795-1801
Hauptverfasser:	Vadiee, E., Renteria, E., Zhang, C., Williams, J. J., Mansoori, A., Addamane, S., Balakrishnan, G., Honsberg, C. B.
Format:	Artikel
Sprache:	eng
Schlagworte:	Aluminum gallium antimonide Crystal growth Dislocation density Epitaxial growth Epitaxial layers Gallium antimonides Gallium arsenide high lattice mismatch Lattice matching Lattices misfit dislocation Molecular beam epitaxy Photonic band gap Photovoltaic cells single-junction solar cell Solar cells Spectral sensitivity Substrates
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