AlGaSb-Based Solar Cells Grown on GaAs: Structural Investigation and Device Performance
GaSb and alloys based on the 6.1 Å family can be grown metamorphically on substrates such as GaAs allowing for the realization of several multijunction solar cell designs. This paper investigates the molecular beam epitaxy growth, crystal quality, and device performance of Al x Ga 1-x Sb-based sing...
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Veröffentlicht in: | IEEE journal of photovoltaics 2017-11, Vol.7 (6), p.1795-1801 |
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creator | Vadiee, E. Renteria, E. Zhang, C. Williams, J. J. Mansoori, A. Addamane, S. Balakrishnan, G. Honsberg, C. B. |
description | GaSb and alloys based on the 6.1 Å family can be grown metamorphically on substrates such as GaAs allowing for the realization of several multijunction solar cell designs. This paper investigates the molecular beam epitaxy growth, crystal quality, and device performance of Al x Ga 1-x Sb-based single-junction solar cells grown on GaAs substrates. The focus is on the optimization of the growth of Al x Ga 1-x Sb on GaAs (001) substrates in order to minimize the threading dislocation density resulting from the large lattice mismatch between GaSb and GaAs. Utilizing optimum growth conditions, solar cells with absorbing layers of different Al x Ga 1-x Sb compositions are studied and compared to control cells grown on lattice-matched GaSb substrates. GaSb, Al 0.15 Ga 0.85 Sb, and Al 0.5 Ga 0.5 Sb solar cells grown on GaAs substrates show open-circuit voltages of 0.16, 0.17, and 0.35 V, respectively. Furthermore, the lattice-mismatched cells demonstrate promising carrier collection with comparable spectral response to lattice-matched control cells grown on GaSb. |
doi_str_mv | 10.1109/JPHOTOV.2017.2756056 |
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J. ; Mansoori, A. ; Addamane, S. ; Balakrishnan, G. ; Honsberg, C. B.</creator><creatorcontrib>Vadiee, E. ; Renteria, E. ; Zhang, C. ; Williams, J. J. ; Mansoori, A. ; Addamane, S. ; Balakrishnan, G. ; Honsberg, C. B.</creatorcontrib><description>GaSb and alloys based on the 6.1 Å family can be grown metamorphically on substrates such as GaAs allowing for the realization of several multijunction solar cell designs. This paper investigates the molecular beam epitaxy growth, crystal quality, and device performance of Al x Ga 1-x Sb-based single-junction solar cells grown on GaAs substrates. The focus is on the optimization of the growth of Al x Ga 1-x Sb on GaAs (001) substrates in order to minimize the threading dislocation density resulting from the large lattice mismatch between GaSb and GaAs. Utilizing optimum growth conditions, solar cells with absorbing layers of different Al x Ga 1-x Sb compositions are studied and compared to control cells grown on lattice-matched GaSb substrates. GaSb, Al 0.15 Ga 0.85 Sb, and Al 0.5 Ga 0.5 Sb solar cells grown on GaAs substrates show open-circuit voltages of 0.16, 0.17, and 0.35 V, respectively. Furthermore, the lattice-mismatched cells demonstrate promising carrier collection with comparable spectral response to lattice-matched control cells grown on GaSb.</description><identifier>ISSN: 2156-3381</identifier><identifier>EISSN: 2156-3403</identifier><identifier>DOI: 10.1109/JPHOTOV.2017.2756056</identifier><identifier>CODEN: IJPEG8</identifier><language>eng</language><publisher>Piscataway: IEEE</publisher><subject>Aluminum gallium antimonide ; Crystal growth ; Dislocation density ; Epitaxial growth ; Epitaxial layers ; Gallium antimonides ; Gallium arsenide ; high lattice mismatch ; Lattice matching ; Lattices ; misfit dislocation ; Molecular beam epitaxy ; Photonic band gap ; Photovoltaic cells ; single-junction solar cell ; Solar cells ; Spectral sensitivity ; Substrates</subject><ispartof>IEEE journal of photovoltaics, 2017-11, Vol.7 (6), p.1795-1801</ispartof><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. 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Utilizing optimum growth conditions, solar cells with absorbing layers of different Al x Ga 1-x Sb compositions are studied and compared to control cells grown on lattice-matched GaSb substrates. GaSb, Al 0.15 Ga 0.85 Sb, and Al 0.5 Ga 0.5 Sb solar cells grown on GaAs substrates show open-circuit voltages of 0.16, 0.17, and 0.35 V, respectively. Furthermore, the lattice-mismatched cells demonstrate promising carrier collection with comparable spectral response to lattice-matched control cells grown on GaSb.</description><subject>Aluminum gallium antimonide</subject><subject>Crystal growth</subject><subject>Dislocation density</subject><subject>Epitaxial growth</subject><subject>Epitaxial layers</subject><subject>Gallium antimonides</subject><subject>Gallium arsenide</subject><subject>high lattice mismatch</subject><subject>Lattice matching</subject><subject>Lattices</subject><subject>misfit dislocation</subject><subject>Molecular beam epitaxy</subject><subject>Photonic band gap</subject><subject>Photovoltaic cells</subject><subject>single-junction solar cell</subject><subject>Solar cells</subject><subject>Spectral sensitivity</subject><subject>Substrates</subject><issn>2156-3381</issn><issn>2156-3403</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2017</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNo9kF9LwzAUxYMoOHSfQB8CPncmzd_6Nqd2k8EGm_oY0jSRjq6dSTvx25ux6X25F-459x5-ANxiNMIYZfevy-livXgfpQiLUSoYR4yfgUGKGU8IReT8byYSX4JhCBsU66DidAA-xnWuV0XyqIMt4aqttYcTW9cB5r79bmDbwFyPwwNcdb43Xe91DWfN3oau-tRdFde6KeGT3VfGwqX1rvVb3Rh7DS6croMdnvoVeHt5Xk-myXyRzybjeWIIZV1iU-IkLRziMuYTDDtUOmwYMQXNkBQldqbk1DmSaVlykhYCF5nkjiErhaPkCtwd7-58-9XHWGrT9r6JLxXOGKepSBGLKnpUGd-G4K1TO19ttf9RGKkDRXWiqA4U1YlitN0cbZW19t8iEY9cBfkF46FtaA</recordid><startdate>20171101</startdate><enddate>20171101</enddate><creator>Vadiee, E.</creator><creator>Renteria, E.</creator><creator>Zhang, C.</creator><creator>Williams, J. 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B.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>AlGaSb-Based Solar Cells Grown on GaAs: Structural Investigation and Device Performance</atitle><jtitle>IEEE journal of photovoltaics</jtitle><stitle>JPHOTOV</stitle><date>2017-11-01</date><risdate>2017</risdate><volume>7</volume><issue>6</issue><spage>1795</spage><epage>1801</epage><pages>1795-1801</pages><issn>2156-3381</issn><eissn>2156-3403</eissn><coden>IJPEG8</coden><abstract>GaSb and alloys based on the 6.1 Å family can be grown metamorphically on substrates such as GaAs allowing for the realization of several multijunction solar cell designs. This paper investigates the molecular beam epitaxy growth, crystal quality, and device performance of Al x Ga 1-x Sb-based single-junction solar cells grown on GaAs substrates. The focus is on the optimization of the growth of Al x Ga 1-x Sb on GaAs (001) substrates in order to minimize the threading dislocation density resulting from the large lattice mismatch between GaSb and GaAs. Utilizing optimum growth conditions, solar cells with absorbing layers of different Al x Ga 1-x Sb compositions are studied and compared to control cells grown on lattice-matched GaSb substrates. GaSb, Al 0.15 Ga 0.85 Sb, and Al 0.5 Ga 0.5 Sb solar cells grown on GaAs substrates show open-circuit voltages of 0.16, 0.17, and 0.35 V, respectively. 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subjects | Aluminum gallium antimonide Crystal growth Dislocation density Epitaxial growth Epitaxial layers Gallium antimonides Gallium arsenide high lattice mismatch Lattice matching Lattices misfit dislocation Molecular beam epitaxy Photonic band gap Photovoltaic cells single-junction solar cell Solar cells Spectral sensitivity Substrates |
title | AlGaSb-Based Solar Cells Grown on GaAs: Structural Investigation and Device Performance |
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