Sputtered Si3N4 and SiO2 electron barrier layer between a redox electrolyte and the WO3 film in electrochromic devices
The application of a redox electrolyte in hybrid type electrochromic devices allows a high charge capacity, thereby a high optical contrast can be achieved. However, the current between the redox electrolyte and the electrochromic layer (tungsten oxide, WO3) interface in equilibrium at colored state...
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| Veröffentlicht in: | Solar energy materials and solar cells 2017-01, Vol.159, p.395-404 |
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| creator | Bogati, Shankar georg, Andreas Graf, Wolfgang |
| description | The application of a redox electrolyte in hybrid type electrochromic devices allows a high charge capacity, thereby a high optical contrast can be achieved. However, the current between the redox electrolyte and the electrochromic layer (tungsten oxide, WO3) interface in equilibrium at colored state of device is critical for a window with large area. This loss current should be maintained below 10μA/cm2 to avoid an inhomogeneous coloration of a large window caused by an ohmic voltage drop in transparent conductive oxide (TCO). The power consumption of such a loss current can be neglected. In this regard, we have investigated silicon nitride (Si3N4) and silicon oxide (SiO2) films as an intermediate electronic barrier layer on the top of the WO3 with thicknesses of 12, 35, 80 and 180nm. These films were coated by direct current reactive magnetron sputtering technique. The electron barrier properties were studied for the iodide/triiodide (I−/I3−) and tetramethylthiourea/tetramethylformaminium disulfide dication (TMTU/TMFDS2+) redox couples for application in electrochromic devices. For both redox couples, Si3N4 showed an effective electronic barrier layer. The thickness of 80nm of Si3N4 reduced the loss current from 240 down to 20μA/cm2 for the I−/I3− redox electrolyte with the visual (solar) transmission from 45% (33%)down to 0.7% (0.5%)at 1V.Similarly, the loss current was reduced from 70 down to 7μA/cm2with the visual (solar) transmission from 71% (54.5%) down to 3% (2%) for TMTU/TMFDS2+ redox electrolyte. However no significant reduction of loss circuit current was achieved with SiO2 barrier layer for both redox couples.
•Sputtered Si3N4 and SiO2 are investigated as electron barrier layer for I−/I−3 and TMTU/TMFDS2+ in electrochromic devices.•Loss currents and optical densities are compared for I−/I−3 and TMTU/TMFDS2+ redox systems.•A significant decrease in loss current is achieved with Si3N4 for both redox electrolytes. |
| doi_str_mv | 10.1016/j.solmat.2016.08.023 |
| format | Article |
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•Sputtered Si3N4 and SiO2 are investigated as electron barrier layer for I−/I−3 and TMTU/TMFDS2+ in electrochromic devices.•Loss currents and optical densities are compared for I−/I−3 and TMTU/TMFDS2+ redox systems.•A significant decrease in loss current is achieved with Si3N4 for both redox electrolytes.</description><identifier>ISSN: 0927-0248</identifier><identifier>EISSN: 1879-3398</identifier><identifier>DOI: 10.1016/j.solmat.2016.08.023</identifier><language>eng</language><publisher>Amsterdam: Elsevier B.V</publisher><subject>Barriers ; Charge transfer resistance ; Circuits ; Coloration ; Coloration efficiency ; Couples ; Devices ; Direct current ; Electrochromic ; Electrochromism ; Electrolytes ; Electrons ; Iodides ; Loss current ; Magnetic properties ; Magnetron sputtering ; Ohmic drop ; Optical density ; Power consumption ; Redox electrolyte ; Redox potential ; Redox properties ; Silicon ; Silicon dioxide ; Silicon nitride ; Silicon oxide ; Studies ; Thickness ; Thin films ; Tungsten ; Tungsten oxide ; Tungsten oxides ; Voltage drop</subject><ispartof>Solar energy materials and solar cells, 2017-01, Vol.159, p.395-404</ispartof><rights>2016</rights><rights>Copyright Elsevier BV Jan 2017</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c375t-2183622b89f6bd66cd1a8f4a7426ce318ace69b0ae416197f1e60ce4c4a8b0bd3</citedby><cites>FETCH-LOGICAL-c375t-2183622b89f6bd66cd1a8f4a7426ce318ace69b0ae416197f1e60ce4c4a8b0bd3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://dx.doi.org/10.1016/j.solmat.2016.08.023$$EHTML$$P50$$Gelsevier$$H</linktohtml><link.rule.ids>314,780,784,3550,27924,27925,45995</link.rule.ids></links><search><creatorcontrib>Bogati, Shankar</creatorcontrib><creatorcontrib>georg, Andreas</creatorcontrib><creatorcontrib>Graf, Wolfgang</creatorcontrib><title>Sputtered Si3N4 and SiO2 electron barrier layer between a redox electrolyte and the WO3 film in electrochromic devices</title><title>Solar energy materials and solar cells</title><description>The application of a redox electrolyte in hybrid type electrochromic devices allows a high charge capacity, thereby a high optical contrast can be achieved. However, the current between the redox electrolyte and the electrochromic layer (tungsten oxide, WO3) interface in equilibrium at colored state of device is critical for a window with large area. This loss current should be maintained below 10μA/cm2 to avoid an inhomogeneous coloration of a large window caused by an ohmic voltage drop in transparent conductive oxide (TCO). The power consumption of such a loss current can be neglected. In this regard, we have investigated silicon nitride (Si3N4) and silicon oxide (SiO2) films as an intermediate electronic barrier layer on the top of the WO3 with thicknesses of 12, 35, 80 and 180nm. These films were coated by direct current reactive magnetron sputtering technique. The electron barrier properties were studied for the iodide/triiodide (I−/I3−) and tetramethylthiourea/tetramethylformaminium disulfide dication (TMTU/TMFDS2+) redox couples for application in electrochromic devices. For both redox couples, Si3N4 showed an effective electronic barrier layer. The thickness of 80nm of Si3N4 reduced the loss current from 240 down to 20μA/cm2 for the I−/I3− redox electrolyte with the visual (solar) transmission from 45% (33%)down to 0.7% (0.5%)at 1V.Similarly, the loss current was reduced from 70 down to 7μA/cm2with the visual (solar) transmission from 71% (54.5%) down to 3% (2%) for TMTU/TMFDS2+ redox electrolyte. However no significant reduction of loss circuit current was achieved with SiO2 barrier layer for both redox couples.
•Sputtered Si3N4 and SiO2 are investigated as electron barrier layer for I−/I−3 and TMTU/TMFDS2+ in electrochromic devices.•Loss currents and optical densities are compared for I−/I−3 and TMTU/TMFDS2+ redox systems.•A significant decrease in loss current is achieved with Si3N4 for both redox electrolytes.</description><subject>Barriers</subject><subject>Charge transfer resistance</subject><subject>Circuits</subject><subject>Coloration</subject><subject>Coloration efficiency</subject><subject>Couples</subject><subject>Devices</subject><subject>Direct current</subject><subject>Electrochromic</subject><subject>Electrochromism</subject><subject>Electrolytes</subject><subject>Electrons</subject><subject>Iodides</subject><subject>Loss current</subject><subject>Magnetic properties</subject><subject>Magnetron sputtering</subject><subject>Ohmic drop</subject><subject>Optical density</subject><subject>Power consumption</subject><subject>Redox electrolyte</subject><subject>Redox potential</subject><subject>Redox properties</subject><subject>Silicon</subject><subject>Silicon dioxide</subject><subject>Silicon nitride</subject><subject>Silicon oxide</subject><subject>Studies</subject><subject>Thickness</subject><subject>Thin films</subject><subject>Tungsten</subject><subject>Tungsten oxide</subject><subject>Tungsten oxides</subject><subject>Voltage drop</subject><issn>0927-0248</issn><issn>1879-3398</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2017</creationdate><recordtype>article</recordtype><recordid>eNp9kMtOwzAQRS0EEqXwBywssU7wq46zQUIVL6mii4JYWo4zUR2lSbHdQv8el9Itm3lo7p3RHISuKckpofK2zcPQrUzMWepyonLC-AkaUVWUGeelOkUjUrIiI0yoc3QRQksIYZKLEdou1psYwUONF46_Cmz6fTVnGDqw0Q89roz3DjzuzC7FCuIXQI8NTp7h-yjrdhF-vXEJ-GPOceO6FXb9cW6Xflg5i2vYOgvhEp01pgtw9ZfH6P3x4W36nM3mTy_T-1lmeTGJGaOKS8YqVTayqqW0NTWqEaYQTFrgVBkLsqyIAUElLYuGgiQWhBVGVaSq-RjdHPau_fC5gRB1O2x8n05qWk4kYZRImlTioLJ-CMFDo9ferYzfaUr0nrBu9YGw3hPWROlEONnuDjZIH2wTIh2sg95C7Xx6WteD-3_BD-MChyM</recordid><startdate>201701</startdate><enddate>201701</enddate><creator>Bogati, Shankar</creator><creator>georg, Andreas</creator><creator>Graf, Wolfgang</creator><general>Elsevier B.V</general><general>Elsevier BV</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>7ST</scope><scope>7TB</scope><scope>7U5</scope><scope>8FD</scope><scope>C1K</scope><scope>FR3</scope><scope>L7M</scope><scope>SOI</scope></search><sort><creationdate>201701</creationdate><title>Sputtered Si3N4 and SiO2 electron barrier layer between a redox electrolyte and the WO3 film in electrochromic devices</title><author>Bogati, Shankar ; georg, Andreas ; Graf, Wolfgang</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c375t-2183622b89f6bd66cd1a8f4a7426ce318ace69b0ae416197f1e60ce4c4a8b0bd3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2017</creationdate><topic>Barriers</topic><topic>Charge transfer resistance</topic><topic>Circuits</topic><topic>Coloration</topic><topic>Coloration efficiency</topic><topic>Couples</topic><topic>Devices</topic><topic>Direct current</topic><topic>Electrochromic</topic><topic>Electrochromism</topic><topic>Electrolytes</topic><topic>Electrons</topic><topic>Iodides</topic><topic>Loss current</topic><topic>Magnetic properties</topic><topic>Magnetron sputtering</topic><topic>Ohmic drop</topic><topic>Optical density</topic><topic>Power consumption</topic><topic>Redox electrolyte</topic><topic>Redox potential</topic><topic>Redox properties</topic><topic>Silicon</topic><topic>Silicon dioxide</topic><topic>Silicon nitride</topic><topic>Silicon oxide</topic><topic>Studies</topic><topic>Thickness</topic><topic>Thin films</topic><topic>Tungsten</topic><topic>Tungsten oxide</topic><topic>Tungsten oxides</topic><topic>Voltage drop</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Bogati, Shankar</creatorcontrib><creatorcontrib>georg, Andreas</creatorcontrib><creatorcontrib>Graf, Wolfgang</creatorcontrib><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Environment Abstracts</collection><collection>Mechanical & Transportation Engineering Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Environmental Sciences and Pollution Management</collection><collection>Engineering Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>Environment Abstracts</collection><jtitle>Solar energy materials and solar cells</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Bogati, Shankar</au><au>georg, Andreas</au><au>Graf, Wolfgang</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Sputtered Si3N4 and SiO2 electron barrier layer between a redox electrolyte and the WO3 film in electrochromic devices</atitle><jtitle>Solar energy materials and solar cells</jtitle><date>2017-01</date><risdate>2017</risdate><volume>159</volume><spage>395</spage><epage>404</epage><pages>395-404</pages><issn>0927-0248</issn><eissn>1879-3398</eissn><abstract>The application of a redox electrolyte in hybrid type electrochromic devices allows a high charge capacity, thereby a high optical contrast can be achieved. However, the current between the redox electrolyte and the electrochromic layer (tungsten oxide, WO3) interface in equilibrium at colored state of device is critical for a window with large area. This loss current should be maintained below 10μA/cm2 to avoid an inhomogeneous coloration of a large window caused by an ohmic voltage drop in transparent conductive oxide (TCO). The power consumption of such a loss current can be neglected. In this regard, we have investigated silicon nitride (Si3N4) and silicon oxide (SiO2) films as an intermediate electronic barrier layer on the top of the WO3 with thicknesses of 12, 35, 80 and 180nm. These films were coated by direct current reactive magnetron sputtering technique. The electron barrier properties were studied for the iodide/triiodide (I−/I3−) and tetramethylthiourea/tetramethylformaminium disulfide dication (TMTU/TMFDS2+) redox couples for application in electrochromic devices. For both redox couples, Si3N4 showed an effective electronic barrier layer. The thickness of 80nm of Si3N4 reduced the loss current from 240 down to 20μA/cm2 for the I−/I3− redox electrolyte with the visual (solar) transmission from 45% (33%)down to 0.7% (0.5%)at 1V.Similarly, the loss current was reduced from 70 down to 7μA/cm2with the visual (solar) transmission from 71% (54.5%) down to 3% (2%) for TMTU/TMFDS2+ redox electrolyte. However no significant reduction of loss circuit current was achieved with SiO2 barrier layer for both redox couples.
•Sputtered Si3N4 and SiO2 are investigated as electron barrier layer for I−/I−3 and TMTU/TMFDS2+ in electrochromic devices.•Loss currents and optical densities are compared for I−/I−3 and TMTU/TMFDS2+ redox systems.•A significant decrease in loss current is achieved with Si3N4 for both redox electrolytes.</abstract><cop>Amsterdam</cop><pub>Elsevier B.V</pub><doi>10.1016/j.solmat.2016.08.023</doi><tpages>10</tpages></addata></record> |
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| subjects | Barriers Charge transfer resistance Circuits Coloration Coloration efficiency Couples Devices Direct current Electrochromic Electrochromism Electrolytes Electrons Iodides Loss current Magnetic properties Magnetron sputtering Ohmic drop Optical density Power consumption Redox electrolyte Redox potential Redox properties Silicon Silicon dioxide Silicon nitride Silicon oxide Studies Thickness Thin films Tungsten Tungsten oxide Tungsten oxides Voltage drop |
| title | Sputtered Si3N4 and SiO2 electron barrier layer between a redox electrolyte and the WO3 film in electrochromic devices |
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