High-power semiconductor-based nano and subnanosecond pulse Generator with a low delay time

One of the promising designs of high-power nanosecond and subnanosecond pulse generators is based on the fast ionization dynistor (FID) stack triggered with nanosecond pulse of overvoltage. This pulse is usually formed by semiconductor opening switches. Delay time of these switches equals the sum of...

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Veröffentlicht in:	IEEE transactions on plasma science 2005-08, Vol.33 (4), p.1240-1244
Hauptverfasser:	Grekhov, I.V., Korotkov, S.V., Stepaniants, A.L., Khristyuk, D.V., Voronkov, V.B., Aristov, Y.V.
Format:	Artikel
Sprache:	eng
Schlagworte:	Delay Delay effects Diodes Electrons Generators Impact ionization Ions Nanocomposites Nanomaterials Nanosecond pulses Nanostructure Plasmas Power semiconductor devices Power semiconductor switches Pulse generation Pulse generators pulse power system switches Pulse power systems pulse shaping methods semiconductor diode switches Semiconductor diodes Semiconductors Silicon Switches Switching Voltage control
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