Comparative study of Al2O3, HfO2, and HfAlOx for improved self‐compliance bipolar resistive switching
The comparison of resistive switching (RS) storage in the same device architecture is explored for atomic layer deposition (ALD) Al2O3, HfO2 and HfAlOx‐based resistive random access memory (ReRAM) devices. Among them, the deeper high‐ and low‐ resistance states, more uniform VSET‐VRES, persistent RO...
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| Veröffentlicht in: | Journal of the American Ceramic Society 2017-12, Vol.100 (12), p.5638-5648 |
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| container_title | Journal of the American Ceramic Society |
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| creator | Sokolov, Andrey S. Son, Seok Ki Lim, Donghwan Han, Hoon Hee Jeon, Yu‐Rim Lee, Jae Ho Choi, Changhwan |
| description | The comparison of resistive switching (RS) storage in the same device architecture is explored for atomic layer deposition (ALD) Al2O3, HfO2 and HfAlOx‐based resistive random access memory (ReRAM) devices. Among them, the deeper high‐ and low‐ resistance states, more uniform VSET‐VRES, persistent ROFF/RON (>102) ratio and endurance up to 105 cycles during both DC and AC measurements were observed for HfAlOx‐based device. This improved behavior is attributed to the intermixing of amorphous Al2O3/HfO2 oxide layers to form amorphous thermally stable HfAlOx thin films by consecutive‐cycled ALD. In addition, the higher oxygen content at Ti/HfAlOx thin films interface was found within the energy dispersive spectroscopy analysis (EDS). We believe this higher oxygen content at the interface could lead to its sufficient storage and supply, leading to the stable filament reduction‐oxidation operation. Further given insight to the RS mechanism, SET/RESET power necessities and scavenging effect shed a light to the enhancement of HfAlOx‐based ReRAM device as well. |
| doi_str_mv | 10.1111/jace.15100 |
| format | Article |
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Among them, the deeper high‐ and low‐ resistance states, more uniform VSET‐VRES, persistent ROFF/RON (>102) ratio and endurance up to 105 cycles during both DC and AC measurements were observed for HfAlOx‐based device. This improved behavior is attributed to the intermixing of amorphous Al2O3/HfO2 oxide layers to form amorphous thermally stable HfAlOx thin films by consecutive‐cycled ALD. In addition, the higher oxygen content at Ti/HfAlOx thin films interface was found within the energy dispersive spectroscopy analysis (EDS). We believe this higher oxygen content at the interface could lead to its sufficient storage and supply, leading to the stable filament reduction‐oxidation operation. Further given insight to the RS mechanism, SET/RESET power necessities and scavenging effect shed a light to the enhancement of HfAlOx‐based ReRAM device as well.</description><identifier>ISSN: 0002-7820</identifier><identifier>EISSN: 1551-2916</identifier><identifier>DOI: 10.1111/jace.15100</identifier><language>eng</language><publisher>Columbus: Wiley Subscription Services, Inc</publisher><subject>Aluminum oxide ; Atomic layer epitaxy ; dielectric materials/properties ; electrical properties ; Fatigue tests ; Hafnium oxide ; Memory devices ; Oxidation ; Oxygen content ; Random access memory ; Redox reactions ; semiconductors ; Switching ; Thermal stability ; thin ; Thin films</subject><ispartof>Journal of the American Ceramic Society, 2017-12, Vol.100 (12), p.5638-5648</ispartof><rights>2017 The American Ceramic Society</rights><rights>2017 American Ceramic Society</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><orcidid>0000-0002-8386-3885</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://onlinelibrary.wiley.com/doi/pdf/10.1111%2Fjace.15100$$EPDF$$P50$$Gwiley$$H</linktopdf><linktohtml>$$Uhttps://onlinelibrary.wiley.com/doi/full/10.1111%2Fjace.15100$$EHTML$$P50$$Gwiley$$H</linktohtml><link.rule.ids>314,776,780,1411,27901,27902,45550,45551</link.rule.ids></links><search><creatorcontrib>Sokolov, Andrey S.</creatorcontrib><creatorcontrib>Son, Seok Ki</creatorcontrib><creatorcontrib>Lim, Donghwan</creatorcontrib><creatorcontrib>Han, Hoon Hee</creatorcontrib><creatorcontrib>Jeon, Yu‐Rim</creatorcontrib><creatorcontrib>Lee, Jae Ho</creatorcontrib><creatorcontrib>Choi, Changhwan</creatorcontrib><title>Comparative study of Al2O3, HfO2, and HfAlOx for improved self‐compliance bipolar resistive switching</title><title>Journal of the American Ceramic Society</title><description>The comparison of resistive switching (RS) storage in the same device architecture is explored for atomic layer deposition (ALD) Al2O3, HfO2 and HfAlOx‐based resistive random access memory (ReRAM) devices. Among them, the deeper high‐ and low‐ resistance states, more uniform VSET‐VRES, persistent ROFF/RON (>102) ratio and endurance up to 105 cycles during both DC and AC measurements were observed for HfAlOx‐based device. This improved behavior is attributed to the intermixing of amorphous Al2O3/HfO2 oxide layers to form amorphous thermally stable HfAlOx thin films by consecutive‐cycled ALD. In addition, the higher oxygen content at Ti/HfAlOx thin films interface was found within the energy dispersive spectroscopy analysis (EDS). We believe this higher oxygen content at the interface could lead to its sufficient storage and supply, leading to the stable filament reduction‐oxidation operation. Further given insight to the RS mechanism, SET/RESET power necessities and scavenging effect shed a light to the enhancement of HfAlOx‐based ReRAM device as well.</description><subject>Aluminum oxide</subject><subject>Atomic layer epitaxy</subject><subject>dielectric materials/properties</subject><subject>electrical properties</subject><subject>Fatigue tests</subject><subject>Hafnium oxide</subject><subject>Memory devices</subject><subject>Oxidation</subject><subject>Oxygen content</subject><subject>Random access memory</subject><subject>Redox reactions</subject><subject>semiconductors</subject><subject>Switching</subject><subject>Thermal stability</subject><subject>thin</subject><subject>Thin films</subject><issn>0002-7820</issn><issn>1551-2916</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2017</creationdate><recordtype>article</recordtype><recordid>eNotkE1OwzAQhS0EEqWw4QSW2DbFf_nxMooKBVXKBtaW49jFVZoEO23JjiNwRk6C2zKbeSM9vZn5ALjHaI5DPW6k0nMcY4QuwATHMY4Ix8klmCCESJRmBF2DG-83YcQ8YxOwLrptL50c7F5DP-zqEXYG5g0p6QwuTUlmULZ1UHlTfkHTOWi3vev2uoZeN-b3-0eFgMbKVmlY2b5rpINOe-vPiQc7qA_brm_BlZGN13f_fQrenxZvxTJalc8vRb6KekJiFJkMVyxNeUURqWSmEJaGU1UZqikP7yBV1TojjKHYyMrwhKeKIJ0wJhlWktEpeDjnhiM_d9oPYtPtXBtWCswZ50lCszi48Nl1sI0eRe_sVrpRYCSOFMWRojhRFK95sTgp-gflvWfs</recordid><startdate>201712</startdate><enddate>201712</enddate><creator>Sokolov, Andrey S.</creator><creator>Son, Seok Ki</creator><creator>Lim, Donghwan</creator><creator>Han, Hoon Hee</creator><creator>Jeon, Yu‐Rim</creator><creator>Lee, Jae Ho</creator><creator>Choi, Changhwan</creator><general>Wiley Subscription Services, Inc</general><scope>7QQ</scope><scope>7SR</scope><scope>8FD</scope><scope>JG9</scope><orcidid>https://orcid.org/0000-0002-8386-3885</orcidid></search><sort><creationdate>201712</creationdate><title>Comparative study of Al2O3, HfO2, and HfAlOx for improved self‐compliance bipolar resistive switching</title><author>Sokolov, Andrey S. ; Son, Seok Ki ; Lim, Donghwan ; Han, Hoon Hee ; Jeon, Yu‐Rim ; Lee, Jae Ho ; Choi, Changhwan</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-p2250-f81b4779b302ba8c01af93cbf3e395510cbde824405fabf9697c20e644a41ca43</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2017</creationdate><topic>Aluminum oxide</topic><topic>Atomic layer epitaxy</topic><topic>dielectric materials/properties</topic><topic>electrical properties</topic><topic>Fatigue tests</topic><topic>Hafnium oxide</topic><topic>Memory devices</topic><topic>Oxidation</topic><topic>Oxygen content</topic><topic>Random access memory</topic><topic>Redox reactions</topic><topic>semiconductors</topic><topic>Switching</topic><topic>Thermal stability</topic><topic>thin</topic><topic>Thin films</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Sokolov, Andrey S.</creatorcontrib><creatorcontrib>Son, Seok Ki</creatorcontrib><creatorcontrib>Lim, Donghwan</creatorcontrib><creatorcontrib>Han, Hoon Hee</creatorcontrib><creatorcontrib>Jeon, Yu‐Rim</creatorcontrib><creatorcontrib>Lee, Jae Ho</creatorcontrib><creatorcontrib>Choi, Changhwan</creatorcontrib><collection>Ceramic Abstracts</collection><collection>Engineered Materials Abstracts</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><jtitle>Journal of the American Ceramic Society</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Sokolov, Andrey S.</au><au>Son, Seok Ki</au><au>Lim, Donghwan</au><au>Han, Hoon Hee</au><au>Jeon, Yu‐Rim</au><au>Lee, Jae Ho</au><au>Choi, Changhwan</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Comparative study of Al2O3, HfO2, and HfAlOx for improved self‐compliance bipolar resistive switching</atitle><jtitle>Journal of the American Ceramic Society</jtitle><date>2017-12</date><risdate>2017</risdate><volume>100</volume><issue>12</issue><spage>5638</spage><epage>5648</epage><pages>5638-5648</pages><issn>0002-7820</issn><eissn>1551-2916</eissn><abstract>The comparison of resistive switching (RS) storage in the same device architecture is explored for atomic layer deposition (ALD) Al2O3, HfO2 and HfAlOx‐based resistive random access memory (ReRAM) devices. Among them, the deeper high‐ and low‐ resistance states, more uniform VSET‐VRES, persistent ROFF/RON (>102) ratio and endurance up to 105 cycles during both DC and AC measurements were observed for HfAlOx‐based device. This improved behavior is attributed to the intermixing of amorphous Al2O3/HfO2 oxide layers to form amorphous thermally stable HfAlOx thin films by consecutive‐cycled ALD. In addition, the higher oxygen content at Ti/HfAlOx thin films interface was found within the energy dispersive spectroscopy analysis (EDS). We believe this higher oxygen content at the interface could lead to its sufficient storage and supply, leading to the stable filament reduction‐oxidation operation. Further given insight to the RS mechanism, SET/RESET power necessities and scavenging effect shed a light to the enhancement of HfAlOx‐based ReRAM device as well.</abstract><cop>Columbus</cop><pub>Wiley Subscription Services, Inc</pub><doi>10.1111/jace.15100</doi><tpages>11</tpages><orcidid>https://orcid.org/0000-0002-8386-3885</orcidid></addata></record> |
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| subjects | Aluminum oxide Atomic layer epitaxy dielectric materials/properties electrical properties Fatigue tests Hafnium oxide Memory devices Oxidation Oxygen content Random access memory Redox reactions semiconductors Switching Thermal stability thin Thin films |
| title | Comparative study of Al2O3, HfO2, and HfAlOx for improved self‐compliance bipolar resistive switching |
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