Applicability of an economic diode laser emitting at 980nm for preparation of polycrystalline silicon thin film solar cells on glass
Recently, polycrystalline silicon thin film solar cells on glass are fabricated by a laser induced liquid phase crystallization (LPC) process. This study compares a new economic diode laser, emitting a line focus at 980nm, with the 808nm laser normally used concerning its absorption during LPC. We m...
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| Veröffentlicht in: | Physica status solidi. A, Applications and materials science Applications and materials science, 2017-10, Vol.214 (10) |
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| container_title | Physica status solidi. A, Applications and materials science |
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| creator | Plentz, Jonathan Schmidt, Thomas Gawlik, Annett Bergmann, Joachim Andra, Gudrun Hauschild, Dirk Lissotschenko, Vitalij |
| description | Recently, polycrystalline silicon thin film solar cells on glass are fabricated by a laser induced liquid phase crystallization (LPC) process. This study compares a new economic diode laser, emitting a line focus at 980nm, with the 808nm laser normally used concerning its absorption during LPC. We measured the optical constants of amorphous silicon by spectral ellipsometry and UV/VIS spectroscopy. Together with the literature data for crystalline and liquid silicon combined with numerical temperature simulations, we calculated the absorption during LPC and the overall power needed for successful crystallization. Solar cells prepared with both laser types show comparable crystallographic and optoelectronic characteristics. Concerning the economic advantages, the use of such a 980nm diode laser system would be the choice for the potential industrial production. Polycrystalline silicon thin film solar cells on glass are fabricated by laser-induced liquid phase crystallization. A new economic diode laser emitting a line focus at 980nm is compared to the 808nm laser normally used. Solar cells show comparable crystallographic and optoelectronic characteristics. |
| doi_str_mv | 10.1002/pssa.201600882 |
| format | Article |
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This study compares a new economic diode laser, emitting a line focus at 980nm, with the 808nm laser normally used concerning its absorption during LPC. We measured the optical constants of amorphous silicon by spectral ellipsometry and UV/VIS spectroscopy. Together with the literature data for crystalline and liquid silicon combined with numerical temperature simulations, we calculated the absorption during LPC and the overall power needed for successful crystallization. Solar cells prepared with both laser types show comparable crystallographic and optoelectronic characteristics. Concerning the economic advantages, the use of such a 980nm diode laser system would be the choice for the potential industrial production. Polycrystalline silicon thin film solar cells on glass are fabricated by laser-induced liquid phase crystallization. A new economic diode laser emitting a line focus at 980nm is compared to the 808nm laser normally used. Solar cells show comparable crystallographic and optoelectronic characteristics.</description><identifier>ISSN: 1862-6300</identifier><identifier>EISSN: 1862-6319</identifier><identifier>DOI: 10.1002/pssa.201600882</identifier><language>eng</language><publisher>Weinheim: Wiley Subscription Services, Inc</publisher><subject>Absorption ; Amorphous silicon ; Computer simulation ; Crystallization ; Crystallography ; Economics ; Ellipsometry ; Lasers ; Optoelectronics ; Photovoltaic cells ; Silicon wafers ; Solar cells ; Thin films</subject><ispartof>Physica status solidi. A, Applications and materials science, 2017-10, Vol.214 (10)</ispartof><rights>2017 WILEY-VCH Verlag GmbH & Co. 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A, Applications and materials science</title><description>Recently, polycrystalline silicon thin film solar cells on glass are fabricated by a laser induced liquid phase crystallization (LPC) process. This study compares a new economic diode laser, emitting a line focus at 980nm, with the 808nm laser normally used concerning its absorption during LPC. We measured the optical constants of amorphous silicon by spectral ellipsometry and UV/VIS spectroscopy. Together with the literature data for crystalline and liquid silicon combined with numerical temperature simulations, we calculated the absorption during LPC and the overall power needed for successful crystallization. Solar cells prepared with both laser types show comparable crystallographic and optoelectronic characteristics. Concerning the economic advantages, the use of such a 980nm diode laser system would be the choice for the potential industrial production. 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Solar cells show comparable crystallographic and optoelectronic characteristics.</description><subject>Absorption</subject><subject>Amorphous silicon</subject><subject>Computer simulation</subject><subject>Crystallization</subject><subject>Crystallography</subject><subject>Economics</subject><subject>Ellipsometry</subject><subject>Lasers</subject><subject>Optoelectronics</subject><subject>Photovoltaic cells</subject><subject>Silicon wafers</subject><subject>Solar cells</subject><subject>Thin films</subject><issn>1862-6300</issn><issn>1862-6319</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2017</creationdate><recordtype>article</recordtype><recordid>eNqNjLFOAzEQRC1EJAKhpV6JOmHtHMe5RAjEB9BHxvGFjfZs43WK6_lwjISoKUYz0sw8pW40bjSiucsibmNQ94jDYM7UUg-9Wfdbbc__MuKFuhQ5Inb33YNeqq_HnJm8eyemOkMawUUIPsU0kYc9pX0AdhIKhIlqpXgAV8EOGCcYU4FcQnbFVUrx55wTz77MUh0zxQDSsA0G9YMijMQTSGJXwAdmgVYcGlxWajE6lnD961fq9uX57el1nUv6PAWpu2M6ldiqnbadtbrJbP-3-gaRIlkR</recordid><startdate>20171001</startdate><enddate>20171001</enddate><creator>Plentz, Jonathan</creator><creator>Schmidt, Thomas</creator><creator>Gawlik, Annett</creator><creator>Bergmann, Joachim</creator><creator>Andra, Gudrun</creator><creator>Hauschild, Dirk</creator><creator>Lissotschenko, Vitalij</creator><general>Wiley Subscription Services, Inc</general><scope>7SP</scope><scope>7SR</scope><scope>7U5</scope><scope>8BQ</scope><scope>8FD</scope><scope>JG9</scope><scope>L7M</scope></search><sort><creationdate>20171001</creationdate><title>Applicability of an economic diode laser emitting at 980nm for preparation of polycrystalline silicon thin film solar cells on glass</title><author>Plentz, Jonathan ; Schmidt, Thomas ; Gawlik, Annett ; Bergmann, Joachim ; Andra, Gudrun ; Hauschild, Dirk ; Lissotschenko, Vitalij</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-proquest_journals_19499149923</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2017</creationdate><topic>Absorption</topic><topic>Amorphous silicon</topic><topic>Computer simulation</topic><topic>Crystallization</topic><topic>Crystallography</topic><topic>Economics</topic><topic>Ellipsometry</topic><topic>Lasers</topic><topic>Optoelectronics</topic><topic>Photovoltaic cells</topic><topic>Silicon wafers</topic><topic>Solar cells</topic><topic>Thin films</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Plentz, Jonathan</creatorcontrib><creatorcontrib>Schmidt, Thomas</creatorcontrib><creatorcontrib>Gawlik, Annett</creatorcontrib><creatorcontrib>Bergmann, Joachim</creatorcontrib><creatorcontrib>Andra, Gudrun</creatorcontrib><creatorcontrib>Hauschild, Dirk</creatorcontrib><creatorcontrib>Lissotschenko, Vitalij</creatorcontrib><collection>Electronics & Communications Abstracts</collection><collection>Engineered Materials Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Physica status solidi. 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This study compares a new economic diode laser, emitting a line focus at 980nm, with the 808nm laser normally used concerning its absorption during LPC. We measured the optical constants of amorphous silicon by spectral ellipsometry and UV/VIS spectroscopy. Together with the literature data for crystalline and liquid silicon combined with numerical temperature simulations, we calculated the absorption during LPC and the overall power needed for successful crystallization. Solar cells prepared with both laser types show comparable crystallographic and optoelectronic characteristics. Concerning the economic advantages, the use of such a 980nm diode laser system would be the choice for the potential industrial production. Polycrystalline silicon thin film solar cells on glass are fabricated by laser-induced liquid phase crystallization. A new economic diode laser emitting a line focus at 980nm is compared to the 808nm laser normally used. 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| subjects | Absorption Amorphous silicon Computer simulation Crystallization Crystallography Economics Ellipsometry Lasers Optoelectronics Photovoltaic cells Silicon wafers Solar cells Thin films |
| title | Applicability of an economic diode laser emitting at 980nm for preparation of polycrystalline silicon thin film solar cells on glass |
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