Characterization of a self‐aligned RTD using a SiNx sidewall process for high‐speed applications

In this article, an InP‐based self‐aligned resonant‐tunneling‐diode (RTD) using a SiNX sidewall process has been fabricated and characterized for high‐speed microwave applications. A plasma‐enhanced dry‐etch technique has been used to form a vertical emitter mesa. The measured peak currents are almo...

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Veröffentlicht in:	Microwave and optical technology letters 2017-12, Vol.59 (12), p.3073-3076
Hauptverfasser:	Lee, Kiwon, Lee, Hoyeon, Lee, Jongwon
Format:	Artikel
Sprache:	eng
Schlagworte:	Alignment High speed oscillator resonant tunneling diode Self alignment Thermionic emission voltage controlled oscillator
Online-Zugang:	Volltext
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