Effect of post-deposition annealing on low temperature metalorganic chemical vapor deposited gallium oxide related materials

Low temperature metalorganic chemical vapor deposition using trimethylgallium and water was investigated. The surface morphology of the film was almost flat at a deposition temperature below 182°C. This flat film was a mixture of nanocrystalline and amorphous phase. The film deposited at a temperatu...

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Veröffentlicht in:	Journal of crystal growth 2017-06, Vol.468, p.129-134
Hauptverfasser:	Takiguchi, Yuki, Miyajima, Shinsuke
Format:	Artikel
Sprache:	eng
Schlagworte:	A1. Characterization A3. Metalorganic chemical vapor deposition A3. Polycrystalline deposition Annealing B1. Gallium compounds B1. Oxides Chemical compounds Chemical vapor deposition Crystal structure Gallium Gallium oxides Low temperature Metalorganic chemical vapor deposition Morphology Nanowires Polycrystals
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