Impact of Interface Traps and Surface Roughness on the Device Performance of Stacked-Nanowire FETs

In stacked-nanowire field-effect transistors (stacked-NW FETs), the effect of nanowire surface roughness (NWSR) and random interface traps (RIT) on device performance variation is investigated. The 3-D NWSR profile is applied to the surface of the nanowires, and then, the interface traps are generat...

Ausführliche Beschreibung

Bibliographische Detailangaben

Veröffentlicht in:	IEEE transactions on electron devices 2017-10, Vol.64 (10), p.4025-4030
Hauptverfasser:	Park, Jinyoung, Shin, Changhwan
Format:	Artikel
Sprache:	eng
Schlagworte:	Correlation Current carriers Field effect transistors Interface trap Nanoscale devices nanowire surface roughness (NWSR) Nanowires Performance evaluation random variation Rough surfaces Scattering Semiconductor devices stacked-nanowire field-effect transistor (stacked-NW FET) Surface roughness
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!