On the Frequency and Voltage-Dependent Profiles of the Surface States and Series Resistance of Au/ZnO/n-Si Structures in a Wide Range of Frequency and Voltage
In order to interpret the electrical characteristics of fabricated Au/ZnO/n-Si structures as a function of frequency and voltage well, their capacitance–voltage ( C – V ) and conductance–voltage ( G / ω – V ) measurements were carried out in a wide range of frequencies (0.7 kHz–2 MHz) and voltages (...
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| Veröffentlicht in: | Journal of electronic materials 2017-10, Vol.46 (10), p.5728-5736 |
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| creator | Nikravan, Afsoun Badali, Yosef Altındal, Şemsettin Uslu, İbrahim Orak, İkram |
| description | In order to interpret the electrical characteristics of fabricated Au/ZnO/n-Si structures as a function of frequency and voltage well, their capacitance–voltage (
C
–
V
) and conductance–voltage (
G
/
ω
–
V
) measurements were carried out in a wide range of frequencies (0.7 kHz–2 MHz) and voltages (± 6 V) by 50 mV steps at room temperature. Both the
C
–
V
and
G
/
ω
–
V
plots have reverse, depletion, and accumulation regions such as a metal–insulator/oxide semiconductor (MIS or MOS) structures. The values of doped-donor atoms (
N
D
), Fermi energy level (
E
F
), barrier height (Φ
B
), and series resistance (
R
s
) of the structure were obtained as a function of frequency and voltage. While the value of
N
D
decreases with increasing frequency almost as exponentially, the value of depletion width (
W
D
) increases. The values of
C
and
G
/
ω
increase with decreasing frequency because the surface states (
N
ss
) are able to follow the alternating current (AC) signal, resulting in excess capacitance (
C
ex
) and conductance (
G
ex
/
ω
), which depends on their relaxation time and the frequency of the AC signal. The voltage-dependent profiles of
N
ss
were obtained from both the high–low frequency capacitance and Hill-Colleman methods. The other important parameter
R
s
of the structure was also obtained from the Nicollian and Brews methods as a function of voltage. |
| doi_str_mv | 10.1007/s11664-017-5613-7 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_journals_1934228638</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>1934228638</sourcerecordid><originalsourceid>FETCH-LOGICAL-c316t-3fe044bf66a8376d50a09e3f144cba4131286b3c52048766d6d7063f08e0fcdc3</originalsourceid><addsrcrecordid>eNp1kctOAyEUhonRxFp9AHckrrGcgWGmy6ZekyY1rbe4IZSBOk1lKjCLvozPKu24cKGrQ-D7zjnkR-gc6CVQWgwCgBCcUChILoCR4gD1IOeMQCleD1GPMgEkz1h-jE5CWFEKOZTQQ19Th-O7wTfefLbG6S1WrsLPzTqqpSFXZmNcZVzED76x9doE3Ng9P2-9VTrVqGK63Ulz4-t0nJlQh6hcekzsqB28uenAkXmdWN_q2PoE1Q4r_FJXBs-UW-7JPzc4RUdWrYM5-6l99HRz_Ti-I5Pp7f14NCGagYiEWUM5X1ghVMkKUeVU0aFhFjjXC8WBQVaKBdN5RnlZCFGJqqCCWVoaanWlWR9ddH03vklbhChXTetdGilhyHiWdFYmCjpK-yYEb6zc-PpD-a0EKncxyC4GmWKQuxhkkZysc0Ji01f9r87_St9a6IrZ</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>1934228638</pqid></control><display><type>article</type><title>On the Frequency and Voltage-Dependent Profiles of the Surface States and Series Resistance of Au/ZnO/n-Si Structures in a Wide Range of Frequency and Voltage</title><source>SpringerLink Journals - AutoHoldings</source><creator>Nikravan, Afsoun ; Badali, Yosef ; Altındal, Şemsettin ; Uslu, İbrahim ; Orak, İkram</creator><creatorcontrib>Nikravan, Afsoun ; Badali, Yosef ; Altındal, Şemsettin ; Uslu, İbrahim ; Orak, İkram</creatorcontrib><description>In order to interpret the electrical characteristics of fabricated Au/ZnO/n-Si structures as a function of frequency and voltage well, their capacitance–voltage (
C
–
V
) and conductance–voltage (
G
/
ω
–
V
) measurements were carried out in a wide range of frequencies (0.7 kHz–2 MHz) and voltages (± 6 V) by 50 mV steps at room temperature. Both the
C
–
V
and
G
/
ω
–
V
plots have reverse, depletion, and accumulation regions such as a metal–insulator/oxide semiconductor (MIS or MOS) structures. The values of doped-donor atoms (
N
D
), Fermi energy level (
E
F
), barrier height (Φ
B
), and series resistance (
R
s
) of the structure were obtained as a function of frequency and voltage. While the value of
N
D
decreases with increasing frequency almost as exponentially, the value of depletion width (
W
D
) increases. The values of
C
and
G
/
ω
increase with decreasing frequency because the surface states (
N
ss
) are able to follow the alternating current (AC) signal, resulting in excess capacitance (
C
ex
) and conductance (
G
ex
/
ω
), which depends on their relaxation time and the frequency of the AC signal. The voltage-dependent profiles of
N
ss
were obtained from both the high–low frequency capacitance and Hill-Colleman methods. The other important parameter
R
s
of the structure was also obtained from the Nicollian and Brews methods as a function of voltage.</description><identifier>ISSN: 0361-5235</identifier><identifier>EISSN: 1543-186X</identifier><identifier>DOI: 10.1007/s11664-017-5613-7</identifier><language>eng</language><publisher>New York: Springer US</publisher><subject>Alternating current ; Atomic structure ; Capacitance ; Characterization and Evaluation of Materials ; Chemistry and Materials Science ; Conductivity ; Depletion ; Electric currents ; Electric potential ; Electronics and Microelectronics ; Fermi surfaces ; Instrumentation ; Insulators ; Materials Science ; Optical and Electronic Materials ; Relaxation time ; Resistance ; Solid State Physics ; Zinc oxide</subject><ispartof>Journal of electronic materials, 2017-10, Vol.46 (10), p.5728-5736</ispartof><rights>The Minerals, Metals & Materials Society 2017</rights><rights>Journal of Electronic Materials is a copyright of Springer, 2017.</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c316t-3fe044bf66a8376d50a09e3f144cba4131286b3c52048766d6d7063f08e0fcdc3</citedby><cites>FETCH-LOGICAL-c316t-3fe044bf66a8376d50a09e3f144cba4131286b3c52048766d6d7063f08e0fcdc3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://link.springer.com/content/pdf/10.1007/s11664-017-5613-7$$EPDF$$P50$$Gspringer$$H</linktopdf><linktohtml>$$Uhttps://link.springer.com/10.1007/s11664-017-5613-7$$EHTML$$P50$$Gspringer$$H</linktohtml><link.rule.ids>314,780,784,27924,27925,41488,42557,51319</link.rule.ids></links><search><creatorcontrib>Nikravan, Afsoun</creatorcontrib><creatorcontrib>Badali, Yosef</creatorcontrib><creatorcontrib>Altındal, Şemsettin</creatorcontrib><creatorcontrib>Uslu, İbrahim</creatorcontrib><creatorcontrib>Orak, İkram</creatorcontrib><title>On the Frequency and Voltage-Dependent Profiles of the Surface States and Series Resistance of Au/ZnO/n-Si Structures in a Wide Range of Frequency and Voltage</title><title>Journal of electronic materials</title><addtitle>Journal of Elec Materi</addtitle><description>In order to interpret the electrical characteristics of fabricated Au/ZnO/n-Si structures as a function of frequency and voltage well, their capacitance–voltage (
C
–
V
) and conductance–voltage (
G
/
ω
–
V
) measurements were carried out in a wide range of frequencies (0.7 kHz–2 MHz) and voltages (± 6 V) by 50 mV steps at room temperature. Both the
C
–
V
and
G
/
ω
–
V
plots have reverse, depletion, and accumulation regions such as a metal–insulator/oxide semiconductor (MIS or MOS) structures. The values of doped-donor atoms (
N
D
), Fermi energy level (
E
F
), barrier height (Φ
B
), and series resistance (
R
s
) of the structure were obtained as a function of frequency and voltage. While the value of
N
D
decreases with increasing frequency almost as exponentially, the value of depletion width (
W
D
) increases. The values of
C
and
G
/
ω
increase with decreasing frequency because the surface states (
N
ss
) are able to follow the alternating current (AC) signal, resulting in excess capacitance (
C
ex
) and conductance (
G
ex
/
ω
), which depends on their relaxation time and the frequency of the AC signal. The voltage-dependent profiles of
N
ss
were obtained from both the high–low frequency capacitance and Hill-Colleman methods. The other important parameter
R
s
of the structure was also obtained from the Nicollian and Brews methods as a function of voltage.</description><subject>Alternating current</subject><subject>Atomic structure</subject><subject>Capacitance</subject><subject>Characterization and Evaluation of Materials</subject><subject>Chemistry and Materials Science</subject><subject>Conductivity</subject><subject>Depletion</subject><subject>Electric currents</subject><subject>Electric potential</subject><subject>Electronics and Microelectronics</subject><subject>Fermi surfaces</subject><subject>Instrumentation</subject><subject>Insulators</subject><subject>Materials Science</subject><subject>Optical and Electronic Materials</subject><subject>Relaxation time</subject><subject>Resistance</subject><subject>Solid State Physics</subject><subject>Zinc oxide</subject><issn>0361-5235</issn><issn>1543-186X</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2017</creationdate><recordtype>article</recordtype><sourceid>8G5</sourceid><sourceid>ABUWG</sourceid><sourceid>AFKRA</sourceid><sourceid>AZQEC</sourceid><sourceid>BENPR</sourceid><sourceid>CCPQU</sourceid><sourceid>DWQXO</sourceid><sourceid>GNUQQ</sourceid><sourceid>GUQSH</sourceid><sourceid>M2O</sourceid><recordid>eNp1kctOAyEUhonRxFp9AHckrrGcgWGmy6ZekyY1rbe4IZSBOk1lKjCLvozPKu24cKGrQ-D7zjnkR-gc6CVQWgwCgBCcUChILoCR4gD1IOeMQCleD1GPMgEkz1h-jE5CWFEKOZTQQ19Th-O7wTfefLbG6S1WrsLPzTqqpSFXZmNcZVzED76x9doE3Ng9P2-9VTrVqGK63Ulz4-t0nJlQh6hcekzsqB28uenAkXmdWN_q2PoE1Q4r_FJXBs-UW-7JPzc4RUdWrYM5-6l99HRz_Ti-I5Pp7f14NCGagYiEWUM5X1ghVMkKUeVU0aFhFjjXC8WBQVaKBdN5RnlZCFGJqqCCWVoaanWlWR9ddH03vklbhChXTetdGilhyHiWdFYmCjpK-yYEb6zc-PpD-a0EKncxyC4GmWKQuxhkkZysc0Ji01f9r87_St9a6IrZ</recordid><startdate>20171001</startdate><enddate>20171001</enddate><creator>Nikravan, Afsoun</creator><creator>Badali, Yosef</creator><creator>Altındal, Şemsettin</creator><creator>Uslu, İbrahim</creator><creator>Orak, İkram</creator><general>Springer US</general><general>Springer Nature B.V</general><scope>AAYXX</scope><scope>CITATION</scope><scope>3V.</scope><scope>7XB</scope><scope>88I</scope><scope>8AF</scope><scope>8AO</scope><scope>8FE</scope><scope>8FG</scope><scope>8FK</scope><scope>8G5</scope><scope>ABJCF</scope><scope>ABUWG</scope><scope>AFKRA</scope><scope>ARAPS</scope><scope>AZQEC</scope><scope>BENPR</scope><scope>BGLVJ</scope><scope>CCPQU</scope><scope>D1I</scope><scope>DWQXO</scope><scope>GNUQQ</scope><scope>GUQSH</scope><scope>HCIFZ</scope><scope>KB.</scope><scope>L6V</scope><scope>M2O</scope><scope>M2P</scope><scope>M7S</scope><scope>MBDVC</scope><scope>P5Z</scope><scope>P62</scope><scope>PDBOC</scope><scope>PQEST</scope><scope>PQQKQ</scope><scope>PQUKI</scope><scope>PRINS</scope><scope>PTHSS</scope><scope>Q9U</scope><scope>S0X</scope></search><sort><creationdate>20171001</creationdate><title>On the Frequency and Voltage-Dependent Profiles of the Surface States and Series Resistance of Au/ZnO/n-Si Structures in a Wide Range of Frequency and Voltage</title><author>Nikravan, Afsoun ; Badali, Yosef ; Altındal, Şemsettin ; Uslu, İbrahim ; Orak, İkram</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c316t-3fe044bf66a8376d50a09e3f144cba4131286b3c52048766d6d7063f08e0fcdc3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2017</creationdate><topic>Alternating current</topic><topic>Atomic structure</topic><topic>Capacitance</topic><topic>Characterization and Evaluation of Materials</topic><topic>Chemistry and Materials Science</topic><topic>Conductivity</topic><topic>Depletion</topic><topic>Electric currents</topic><topic>Electric potential</topic><topic>Electronics and Microelectronics</topic><topic>Fermi surfaces</topic><topic>Instrumentation</topic><topic>Insulators</topic><topic>Materials Science</topic><topic>Optical and Electronic Materials</topic><topic>Relaxation time</topic><topic>Resistance</topic><topic>Solid State Physics</topic><topic>Zinc oxide</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Nikravan, Afsoun</creatorcontrib><creatorcontrib>Badali, Yosef</creatorcontrib><creatorcontrib>Altındal, Şemsettin</creatorcontrib><creatorcontrib>Uslu, İbrahim</creatorcontrib><creatorcontrib>Orak, İkram</creatorcontrib><collection>CrossRef</collection><collection>ProQuest Central (Corporate)</collection><collection>ProQuest Central (purchase pre-March 2016)</collection><collection>Science Database (Alumni Edition)</collection><collection>STEM Database</collection><collection>ProQuest Pharma Collection</collection><collection>ProQuest SciTech Collection</collection><collection>ProQuest Technology Collection</collection><collection>ProQuest Central (Alumni) (purchase pre-March 2016)</collection><collection>Research Library (Alumni Edition)</collection><collection>Materials Science & Engineering Collection</collection><collection>ProQuest Central (Alumni Edition)</collection><collection>ProQuest Central UK/Ireland</collection><collection>Advanced Technologies & Aerospace Collection</collection><collection>ProQuest Central Essentials</collection><collection>ProQuest Central</collection><collection>Technology Collection</collection><collection>ProQuest One Community College</collection><collection>ProQuest Materials Science Collection</collection><collection>ProQuest Central Korea</collection><collection>ProQuest Central Student</collection><collection>Research Library Prep</collection><collection>SciTech Premium Collection</collection><collection>Materials Science Database</collection><collection>ProQuest Engineering Collection</collection><collection>Research Library</collection><collection>Science Database</collection><collection>Engineering Database</collection><collection>Research Library (Corporate)</collection><collection>Advanced Technologies & Aerospace Database</collection><collection>ProQuest Advanced Technologies & Aerospace Collection</collection><collection>Materials Science Collection</collection><collection>ProQuest One Academic Eastern Edition (DO NOT USE)</collection><collection>ProQuest One Academic</collection><collection>ProQuest One Academic UKI Edition</collection><collection>ProQuest Central China</collection><collection>Engineering Collection</collection><collection>ProQuest Central Basic</collection><collection>SIRS Editorial</collection><jtitle>Journal of electronic materials</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Nikravan, Afsoun</au><au>Badali, Yosef</au><au>Altındal, Şemsettin</au><au>Uslu, İbrahim</au><au>Orak, İkram</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>On the Frequency and Voltage-Dependent Profiles of the Surface States and Series Resistance of Au/ZnO/n-Si Structures in a Wide Range of Frequency and Voltage</atitle><jtitle>Journal of electronic materials</jtitle><stitle>Journal of Elec Materi</stitle><date>2017-10-01</date><risdate>2017</risdate><volume>46</volume><issue>10</issue><spage>5728</spage><epage>5736</epage><pages>5728-5736</pages><issn>0361-5235</issn><eissn>1543-186X</eissn><abstract>In order to interpret the electrical characteristics of fabricated Au/ZnO/n-Si structures as a function of frequency and voltage well, their capacitance–voltage (
C
–
V
) and conductance–voltage (
G
/
ω
–
V
) measurements were carried out in a wide range of frequencies (0.7 kHz–2 MHz) and voltages (± 6 V) by 50 mV steps at room temperature. Both the
C
–
V
and
G
/
ω
–
V
plots have reverse, depletion, and accumulation regions such as a metal–insulator/oxide semiconductor (MIS or MOS) structures. The values of doped-donor atoms (
N
D
), Fermi energy level (
E
F
), barrier height (Φ
B
), and series resistance (
R
s
) of the structure were obtained as a function of frequency and voltage. While the value of
N
D
decreases with increasing frequency almost as exponentially, the value of depletion width (
W
D
) increases. The values of
C
and
G
/
ω
increase with decreasing frequency because the surface states (
N
ss
) are able to follow the alternating current (AC) signal, resulting in excess capacitance (
C
ex
) and conductance (
G
ex
/
ω
), which depends on their relaxation time and the frequency of the AC signal. The voltage-dependent profiles of
N
ss
were obtained from both the high–low frequency capacitance and Hill-Colleman methods. The other important parameter
R
s
of the structure was also obtained from the Nicollian and Brews methods as a function of voltage.</abstract><cop>New York</cop><pub>Springer US</pub><doi>10.1007/s11664-017-5613-7</doi><tpages>9</tpages></addata></record> |
| fulltext | fulltext |
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| ispartof | Journal of electronic materials, 2017-10, Vol.46 (10), p.5728-5736 |
| issn | 0361-5235 1543-186X |
| language | eng |
| recordid | cdi_proquest_journals_1934228638 |
| source | SpringerLink Journals - AutoHoldings |
| subjects | Alternating current Atomic structure Capacitance Characterization and Evaluation of Materials Chemistry and Materials Science Conductivity Depletion Electric currents Electric potential Electronics and Microelectronics Fermi surfaces Instrumentation Insulators Materials Science Optical and Electronic Materials Relaxation time Resistance Solid State Physics Zinc oxide |
| title | On the Frequency and Voltage-Dependent Profiles of the Surface States and Series Resistance of Au/ZnO/n-Si Structures in a Wide Range of Frequency and Voltage |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-27T12%3A02%3A23IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=On%20the%20Frequency%20and%20Voltage-Dependent%20Profiles%20of%20the%20Surface%20States%20and%20Series%20Resistance%20of%20Au/ZnO/n-Si%20Structures%20in%20a%20Wide%20Range%20of%20Frequency%20and%20Voltage&rft.jtitle=Journal%20of%20electronic%20materials&rft.au=Nikravan,%20Afsoun&rft.date=2017-10-01&rft.volume=46&rft.issue=10&rft.spage=5728&rft.epage=5736&rft.pages=5728-5736&rft.issn=0361-5235&rft.eissn=1543-186X&rft_id=info:doi/10.1007/s11664-017-5613-7&rft_dat=%3Cproquest_cross%3E1934228638%3C/proquest_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=1934228638&rft_id=info:pmid/&rfr_iscdi=true |