Direct Growth of CdTe on a (211) Si Substrate with Vapor Phase Epitaxy Using a Metallic Cd Source

We successfully performed epitaxial CdTe growth on a Si (211) substrate with vapor-phase epitaxy using a cost-effective metallic cadmium source as a group-II precursor. The thermodynamic data demonstrate that the combination of metallic Cd and diisopropyl-telluride (DiPTe) with a H 2 carrier gas ena...

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Veröffentlicht in:	Journal of electronic materials 2017-10, Vol.46 (10), p.5884-5888
Hauptverfasser:	Iso, Kenji, Gokudan, Yuya, Shiraishi, Masumi, Murakami, Hisashi, Koukitu, Akinori
Format:	Artikel
Sprache:	eng
Schlagworte:	Cadmium telluride Cadmium tellurides Characterization and Evaluation of Materials Chemistry and Materials Science Crystal growth Crystal structure Electronics Electronics and Microelectronics Epitaxial growth Film thickness Instrumentation Intermetallic compounds Materials Science Optical and Electronic Materials Silicon substrates Solid State Physics Substrates Vapor phase epitaxy
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