Direct Growth of CdTe on a (211) Si Substrate with Vapor Phase Epitaxy Using a Metallic Cd Source
We successfully performed epitaxial CdTe growth on a Si (211) substrate with vapor-phase epitaxy using a cost-effective metallic cadmium source as a group-II precursor. The thermodynamic data demonstrate that the combination of metallic Cd and diisopropyl-telluride (DiPTe) with a H 2 carrier gas ena...
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| Veröffentlicht in: | Journal of electronic materials 2017-10, Vol.46 (10), p.5884-5888 |
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| container_title | Journal of electronic materials |
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| creator | Iso, Kenji Gokudan, Yuya Shiraishi, Masumi Murakami, Hisashi Koukitu, Akinori |
| description | We successfully performed epitaxial CdTe growth on a Si (211) substrate with vapor-phase epitaxy using a cost-effective metallic cadmium source as a group-II precursor. The thermodynamic data demonstrate that the combination of metallic Cd and diisopropyl-telluride (DiPTe) with a H
2
carrier gas enables the growth of CdTe crystals. A CdTe single crystal with a (422) surface orientation was obtained when a growth temperature between 600°C and 650°C was employed. The surface morphology and crystalline quality were improved with increasing film thickness. The full-width at half-maximum of the x-ray rocking curves with a film thickness of 15.7
μ
m for the skew-symmetrical (422) and asymmetrical (111) reflection were 528 arcsec and 615 arcsec, respectively. |
| doi_str_mv | 10.1007/s11664-017-5584-8 |
| format | Article |
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2
carrier gas enables the growth of CdTe crystals. A CdTe single crystal with a (422) surface orientation was obtained when a growth temperature between 600°C and 650°C was employed. The surface morphology and crystalline quality were improved with increasing film thickness. The full-width at half-maximum of the x-ray rocking curves with a film thickness of 15.7
μ
m for the skew-symmetrical (422) and asymmetrical (111) reflection were 528 arcsec and 615 arcsec, respectively.</description><identifier>ISSN: 0361-5235</identifier><identifier>EISSN: 1543-186X</identifier><identifier>DOI: 10.1007/s11664-017-5584-8</identifier><language>eng</language><publisher>New York: Springer US</publisher><subject>Cadmium telluride ; Cadmium tellurides ; Characterization and Evaluation of Materials ; Chemistry and Materials Science ; Crystal growth ; Crystal structure ; Electronics ; Electronics and Microelectronics ; Epitaxial growth ; Film thickness ; Instrumentation ; Intermetallic compounds ; Materials Science ; Optical and Electronic Materials ; Silicon substrates ; Solid State Physics ; Substrates ; Vapor phase epitaxy</subject><ispartof>Journal of electronic materials, 2017-10, Vol.46 (10), p.5884-5888</ispartof><rights>The Minerals, Metals & Materials Society 2017</rights><rights>Journal of Electronic Materials is a copyright of Springer, 2017.</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c316t-8774ae0c6614cbff3e507e5c8fe09337394b6aac7aed5e3f5e5654aa4a0fdfeb3</citedby><cites>FETCH-LOGICAL-c316t-8774ae0c6614cbff3e507e5c8fe09337394b6aac7aed5e3f5e5654aa4a0fdfeb3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://link.springer.com/content/pdf/10.1007/s11664-017-5584-8$$EPDF$$P50$$Gspringer$$H</linktopdf><linktohtml>$$Uhttps://link.springer.com/10.1007/s11664-017-5584-8$$EHTML$$P50$$Gspringer$$H</linktohtml><link.rule.ids>314,778,782,27913,27914,41477,42546,51308</link.rule.ids></links><search><creatorcontrib>Iso, Kenji</creatorcontrib><creatorcontrib>Gokudan, Yuya</creatorcontrib><creatorcontrib>Shiraishi, Masumi</creatorcontrib><creatorcontrib>Murakami, Hisashi</creatorcontrib><creatorcontrib>Koukitu, Akinori</creatorcontrib><title>Direct Growth of CdTe on a (211) Si Substrate with Vapor Phase Epitaxy Using a Metallic Cd Source</title><title>Journal of electronic materials</title><addtitle>Journal of Elec Materi</addtitle><description>We successfully performed epitaxial CdTe growth on a Si (211) substrate with vapor-phase epitaxy using a cost-effective metallic cadmium source as a group-II precursor. The thermodynamic data demonstrate that the combination of metallic Cd and diisopropyl-telluride (DiPTe) with a H
2
carrier gas enables the growth of CdTe crystals. A CdTe single crystal with a (422) surface orientation was obtained when a growth temperature between 600°C and 650°C was employed. The surface morphology and crystalline quality were improved with increasing film thickness. The full-width at half-maximum of the x-ray rocking curves with a film thickness of 15.7
μ
m for the skew-symmetrical (422) and asymmetrical (111) reflection were 528 arcsec and 615 arcsec, respectively.</description><subject>Cadmium telluride</subject><subject>Cadmium tellurides</subject><subject>Characterization and Evaluation of Materials</subject><subject>Chemistry and Materials Science</subject><subject>Crystal growth</subject><subject>Crystal structure</subject><subject>Electronics</subject><subject>Electronics and Microelectronics</subject><subject>Epitaxial growth</subject><subject>Film thickness</subject><subject>Instrumentation</subject><subject>Intermetallic compounds</subject><subject>Materials Science</subject><subject>Optical and Electronic Materials</subject><subject>Silicon substrates</subject><subject>Solid State Physics</subject><subject>Substrates</subject><subject>Vapor phase epitaxy</subject><issn>0361-5235</issn><issn>1543-186X</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2017</creationdate><recordtype>article</recordtype><sourceid>8G5</sourceid><sourceid>ABUWG</sourceid><sourceid>AFKRA</sourceid><sourceid>AZQEC</sourceid><sourceid>BENPR</sourceid><sourceid>CCPQU</sourceid><sourceid>DWQXO</sourceid><sourceid>GNUQQ</sourceid><sourceid>GUQSH</sourceid><sourceid>M2O</sourceid><recordid>eNp1kL1OwzAURi0EEqXwAGyWWGAI-MY_SUZUSkEqAqktYrMc97pNVZJipyp9e1yFgYXpLud8VzqEXAK7BcayuwCglEgYZImUuUjyI9IDKXgCufo4Jj3GFSQy5fKUnIWwYgwk5NAj5qHyaFs68s2uXdLG0cF8irSpqaHXKcANnVR0si1D602LdFdF6N1sGk_fliYgHW6q1nzv6SxU9SI6L9ia9bqycYZOmq23eE5OnFkHvPi9fTJ7HE4HT8n4dfQ8uB8nloNqkzzLhEFmlQJhS-c4SpahtLlDVnCe8UKUyhibGZxL5E6iVFIYIwxzc4cl75Orbnfjm68thlav4v86vtRQcJFClhciUtBR1jcheHR646tP4_camD6U1F1JHUvqQ0mdRyftnBDZeoH-z_K_0g8lqXTd</recordid><startdate>20171001</startdate><enddate>20171001</enddate><creator>Iso, Kenji</creator><creator>Gokudan, Yuya</creator><creator>Shiraishi, Masumi</creator><creator>Murakami, Hisashi</creator><creator>Koukitu, Akinori</creator><general>Springer US</general><general>Springer Nature B.V</general><scope>AAYXX</scope><scope>CITATION</scope><scope>3V.</scope><scope>7XB</scope><scope>88I</scope><scope>8AF</scope><scope>8AO</scope><scope>8FE</scope><scope>8FG</scope><scope>8FK</scope><scope>8G5</scope><scope>ABJCF</scope><scope>ABUWG</scope><scope>AFKRA</scope><scope>ARAPS</scope><scope>AZQEC</scope><scope>BENPR</scope><scope>BGLVJ</scope><scope>CCPQU</scope><scope>D1I</scope><scope>DWQXO</scope><scope>GNUQQ</scope><scope>GUQSH</scope><scope>HCIFZ</scope><scope>KB.</scope><scope>L6V</scope><scope>M2O</scope><scope>M2P</scope><scope>M7S</scope><scope>MBDVC</scope><scope>P5Z</scope><scope>P62</scope><scope>PDBOC</scope><scope>PQEST</scope><scope>PQQKQ</scope><scope>PQUKI</scope><scope>PRINS</scope><scope>PTHSS</scope><scope>Q9U</scope><scope>S0X</scope></search><sort><creationdate>20171001</creationdate><title>Direct Growth of CdTe on a (211) Si Substrate with Vapor Phase Epitaxy Using a Metallic Cd Source</title><author>Iso, Kenji ; Gokudan, Yuya ; Shiraishi, Masumi ; Murakami, Hisashi ; Koukitu, Akinori</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c316t-8774ae0c6614cbff3e507e5c8fe09337394b6aac7aed5e3f5e5654aa4a0fdfeb3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2017</creationdate><topic>Cadmium telluride</topic><topic>Cadmium tellurides</topic><topic>Characterization and Evaluation of Materials</topic><topic>Chemistry and Materials Science</topic><topic>Crystal growth</topic><topic>Crystal structure</topic><topic>Electronics</topic><topic>Electronics and Microelectronics</topic><topic>Epitaxial growth</topic><topic>Film thickness</topic><topic>Instrumentation</topic><topic>Intermetallic compounds</topic><topic>Materials Science</topic><topic>Optical and Electronic Materials</topic><topic>Silicon substrates</topic><topic>Solid State Physics</topic><topic>Substrates</topic><topic>Vapor phase epitaxy</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Iso, Kenji</creatorcontrib><creatorcontrib>Gokudan, Yuya</creatorcontrib><creatorcontrib>Shiraishi, Masumi</creatorcontrib><creatorcontrib>Murakami, Hisashi</creatorcontrib><creatorcontrib>Koukitu, Akinori</creatorcontrib><collection>CrossRef</collection><collection>ProQuest Central (Corporate)</collection><collection>ProQuest Central (purchase pre-March 2016)</collection><collection>Science Database (Alumni Edition)</collection><collection>STEM Database</collection><collection>ProQuest Pharma Collection</collection><collection>ProQuest SciTech Collection</collection><collection>ProQuest Technology Collection</collection><collection>ProQuest Central (Alumni) (purchase pre-March 2016)</collection><collection>Research Library (Alumni Edition)</collection><collection>Materials Science & Engineering Collection</collection><collection>ProQuest Central (Alumni Edition)</collection><collection>ProQuest Central UK/Ireland</collection><collection>Advanced Technologies & Aerospace Collection</collection><collection>ProQuest Central Essentials</collection><collection>ProQuest Central</collection><collection>Technology Collection</collection><collection>ProQuest One Community College</collection><collection>ProQuest Materials Science Collection</collection><collection>ProQuest Central Korea</collection><collection>ProQuest Central Student</collection><collection>Research Library Prep</collection><collection>SciTech Premium Collection</collection><collection>Materials Science Database</collection><collection>ProQuest Engineering Collection</collection><collection>Research Library</collection><collection>Science Database</collection><collection>Engineering Database</collection><collection>Research Library (Corporate)</collection><collection>Advanced Technologies & Aerospace Database</collection><collection>ProQuest Advanced Technologies & Aerospace Collection</collection><collection>Materials Science Collection</collection><collection>ProQuest One Academic Eastern Edition (DO NOT USE)</collection><collection>ProQuest One Academic</collection><collection>ProQuest One Academic UKI Edition</collection><collection>ProQuest Central China</collection><collection>Engineering Collection</collection><collection>ProQuest Central Basic</collection><collection>SIRS Editorial</collection><jtitle>Journal of electronic materials</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Iso, Kenji</au><au>Gokudan, Yuya</au><au>Shiraishi, Masumi</au><au>Murakami, Hisashi</au><au>Koukitu, Akinori</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Direct Growth of CdTe on a (211) Si Substrate with Vapor Phase Epitaxy Using a Metallic Cd Source</atitle><jtitle>Journal of electronic materials</jtitle><stitle>Journal of Elec Materi</stitle><date>2017-10-01</date><risdate>2017</risdate><volume>46</volume><issue>10</issue><spage>5884</spage><epage>5888</epage><pages>5884-5888</pages><issn>0361-5235</issn><eissn>1543-186X</eissn><abstract>We successfully performed epitaxial CdTe growth on a Si (211) substrate with vapor-phase epitaxy using a cost-effective metallic cadmium source as a group-II precursor. The thermodynamic data demonstrate that the combination of metallic Cd and diisopropyl-telluride (DiPTe) with a H
2
carrier gas enables the growth of CdTe crystals. A CdTe single crystal with a (422) surface orientation was obtained when a growth temperature between 600°C and 650°C was employed. The surface morphology and crystalline quality were improved with increasing film thickness. The full-width at half-maximum of the x-ray rocking curves with a film thickness of 15.7
μ
m for the skew-symmetrical (422) and asymmetrical (111) reflection were 528 arcsec and 615 arcsec, respectively.</abstract><cop>New York</cop><pub>Springer US</pub><doi>10.1007/s11664-017-5584-8</doi><tpages>5</tpages></addata></record> |
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| subjects | Cadmium telluride Cadmium tellurides Characterization and Evaluation of Materials Chemistry and Materials Science Crystal growth Crystal structure Electronics Electronics and Microelectronics Epitaxial growth Film thickness Instrumentation Intermetallic compounds Materials Science Optical and Electronic Materials Silicon substrates Solid State Physics Substrates Vapor phase epitaxy |
| title | Direct Growth of CdTe on a (211) Si Substrate with Vapor Phase Epitaxy Using a Metallic Cd Source |
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