Temperature dependence of capacitance-voltage characteristics for GeTe2 thin films

We report the results of the crystallization behaviour, phase change and structure of GeTe2 thin films to ascertain the role of the capacitance behaviour. In this regard, capacitance-voltage characteristics were performed to know the effects of bias voltage, temperature and frequency on the observed...

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Veröffentlicht in:	Journal of alloys and compounds 2017-02, Vol.694, p.163-167
Hauptverfasser:	Ananth Kumar, R.T., Mahmoud, Saleh T., Said, Khadija, Pathinettam Padiyan, D., Qamhieh, N.
Format:	Artikel
Sprache:	eng
Schlagworte:	Capacitance-voltage characteristics Chalcogenide glasses Chemical compounds Crystallization Electric potential Germanium compounds Optical properties Phase transitions Quantum wells Temperature dependence Thin films Vacuum deposition
Online-Zugang:	Volltext
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