Shear-horizontal surface acoustic wave characteristics of a (110) ZnO/SiO^sub 2^/Si multilayer structure
Shear-horizontal (SH) surface acoustic wave (SAW) propagation characteristics in IDT/(110)ZnO/SiO2/Si multilayered structure were theoretically investigated using 3-dimensions (3D) finite element analysis (FEA). X-ray diffraction result shows that the prepared ZnO films have preferred (110) orientat...
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Veröffentlicht in: | Journal of alloys and compounds 2017-02, Vol.693, p.558 |
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description | Shear-horizontal (SH) surface acoustic wave (SAW) propagation characteristics in IDT/(110)ZnO/SiO2/Si multilayered structure were theoretically investigated using 3-dimensions (3D) finite element analysis (FEA). X-ray diffraction result shows that the prepared ZnO films have preferred (110) orientation with its c-axis parallel to the substrate. 3D FEA results and the out of plane vibration experiment confirmed that SH-SAW was successfully excited in the multilayered structure. The phase velocities Vp, electromechanical coupling coefficients K2, and temperature coefficient of frequency (TCF) dispersion properties of mode 0 were studied considering various thicknesses of ZnO and SiO2 thin films, which were verified by experiments. SiO2 film with a positive TCF not only compensate the negative TCF of the (110) ZnO but also enhance the K2. A large K2 of 3.37 and nearly zero TCF of -0.1 ppm/°C was achieved in SH-SAW device based on IDT/(110)ZnO(2 µm)/SiO2(1 µm)/Si multilayer structure, which is promising for high sensitive and temperature stable bio-sensing application. |
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X-ray diffraction result shows that the prepared ZnO films have preferred (110) orientation with its c-axis parallel to the substrate. 3D FEA results and the out of plane vibration experiment confirmed that SH-SAW was successfully excited in the multilayered structure. The phase velocities Vp, electromechanical coupling coefficients K2, and temperature coefficient of frequency (TCF) dispersion properties of mode 0 were studied considering various thicknesses of ZnO and SiO2 thin films, which were verified by experiments. SiO2 film with a positive TCF not only compensate the negative TCF of the (110) ZnO but also enhance the K2. A large K2 of 3.37 and nearly zero TCF of -0.1 ppm/°C was achieved in SH-SAW device based on IDT/(110)ZnO(2 µm)/SiO2(1 µm)/Si multilayer structure, which is promising for high sensitive and temperature stable bio-sensing application.</description><identifier>ISSN: 0925-8388</identifier><identifier>EISSN: 1873-4669</identifier><language>eng</language><publisher>Lausanne: Elsevier BV</publisher><subject>Acoustic propagation ; Coupling coefficients ; Finite element analysis ; Finite element method ; Silica ; Silicon dioxide ; Surface acoustic waves ; Thin films ; Wave dispersion ; Wave propagation ; Zinc oxide ; Zinc oxides</subject><ispartof>Journal of alloys and compounds, 2017-02, Vol.693, p.558</ispartof><rights>Copyright Elsevier BV Feb 5, 2017</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784</link.rule.ids></links><search><creatorcontrib>Luo, Jingting</creatorcontrib><creatorcontrib>Quan, Aojie</creatorcontrib><creatorcontrib>Fu, Chen</creatorcontrib><creatorcontrib>Li, Honglang</creatorcontrib><title>Shear-horizontal surface acoustic wave characteristics of a (110) ZnO/SiO^sub 2^/Si multilayer structure</title><title>Journal of alloys and compounds</title><description>Shear-horizontal (SH) surface acoustic wave (SAW) propagation characteristics in IDT/(110)ZnO/SiO2/Si multilayered structure were theoretically investigated using 3-dimensions (3D) finite element analysis (FEA). X-ray diffraction result shows that the prepared ZnO films have preferred (110) orientation with its c-axis parallel to the substrate. 3D FEA results and the out of plane vibration experiment confirmed that SH-SAW was successfully excited in the multilayered structure. The phase velocities Vp, electromechanical coupling coefficients K2, and temperature coefficient of frequency (TCF) dispersion properties of mode 0 were studied considering various thicknesses of ZnO and SiO2 thin films, which were verified by experiments. SiO2 film with a positive TCF not only compensate the negative TCF of the (110) ZnO but also enhance the K2. A large K2 of 3.37 and nearly zero TCF of -0.1 ppm/°C was achieved in SH-SAW device based on IDT/(110)ZnO(2 µm)/SiO2(1 µm)/Si multilayer structure, which is promising for high sensitive and temperature stable bio-sensing application.</description><subject>Acoustic propagation</subject><subject>Coupling coefficients</subject><subject>Finite element analysis</subject><subject>Finite element method</subject><subject>Silica</subject><subject>Silicon dioxide</subject><subject>Surface acoustic waves</subject><subject>Thin films</subject><subject>Wave dispersion</subject><subject>Wave propagation</subject><subject>Zinc oxide</subject><subject>Zinc oxides</subject><issn>0925-8388</issn><issn>1873-4669</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2017</creationdate><recordtype>article</recordtype><recordid>eNqNjrFuwjAURS0EUgP0H57E0g4RdpwGZ65adWMIEwPoYTmKURrDe3ar8vWkUj-g07069wx3IjJlNjovq6qeikzWxUtutDEPYs58llKqWqtMdE3nkPIukL-FIWIPnKhF6wBtSBy9hW_8cmA7JLTRkf9lDKEFhCel5DPsh-268dsDpxMUh7HCZ-qj7_HHEXCkZGMitxSzFnt2j3-5EKv3t93rR36hcE2O4_EcEg3jdByf6dpU5abS_7PuLzhIdQ</recordid><startdate>20170205</startdate><enddate>20170205</enddate><creator>Luo, Jingting</creator><creator>Quan, Aojie</creator><creator>Fu, Chen</creator><creator>Li, Honglang</creator><general>Elsevier BV</general><scope>8BQ</scope><scope>8FD</scope><scope>JG9</scope></search><sort><creationdate>20170205</creationdate><title>Shear-horizontal surface acoustic wave characteristics of a (110) ZnO/SiO^sub 2^/Si multilayer structure</title><author>Luo, Jingting ; Quan, Aojie ; Fu, Chen ; Li, Honglang</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-proquest_journals_19339864763</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2017</creationdate><topic>Acoustic propagation</topic><topic>Coupling coefficients</topic><topic>Finite element analysis</topic><topic>Finite element method</topic><topic>Silica</topic><topic>Silicon dioxide</topic><topic>Surface acoustic waves</topic><topic>Thin films</topic><topic>Wave dispersion</topic><topic>Wave propagation</topic><topic>Zinc oxide</topic><topic>Zinc oxides</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Luo, Jingting</creatorcontrib><creatorcontrib>Quan, Aojie</creatorcontrib><creatorcontrib>Fu, Chen</creatorcontrib><creatorcontrib>Li, Honglang</creatorcontrib><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><jtitle>Journal of alloys and compounds</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Luo, Jingting</au><au>Quan, Aojie</au><au>Fu, Chen</au><au>Li, Honglang</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Shear-horizontal surface acoustic wave characteristics of a (110) ZnO/SiO^sub 2^/Si multilayer structure</atitle><jtitle>Journal of alloys and compounds</jtitle><date>2017-02-05</date><risdate>2017</risdate><volume>693</volume><spage>558</spage><pages>558-</pages><issn>0925-8388</issn><eissn>1873-4669</eissn><abstract>Shear-horizontal (SH) surface acoustic wave (SAW) propagation characteristics in IDT/(110)ZnO/SiO2/Si multilayered structure were theoretically investigated using 3-dimensions (3D) finite element analysis (FEA). X-ray diffraction result shows that the prepared ZnO films have preferred (110) orientation with its c-axis parallel to the substrate. 3D FEA results and the out of plane vibration experiment confirmed that SH-SAW was successfully excited in the multilayered structure. The phase velocities Vp, electromechanical coupling coefficients K2, and temperature coefficient of frequency (TCF) dispersion properties of mode 0 were studied considering various thicknesses of ZnO and SiO2 thin films, which were verified by experiments. SiO2 film with a positive TCF not only compensate the negative TCF of the (110) ZnO but also enhance the K2. A large K2 of 3.37 and nearly zero TCF of -0.1 ppm/°C was achieved in SH-SAW device based on IDT/(110)ZnO(2 µm)/SiO2(1 µm)/Si multilayer structure, which is promising for high sensitive and temperature stable bio-sensing application.</abstract><cop>Lausanne</cop><pub>Elsevier BV</pub></addata></record> |
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subjects | Acoustic propagation Coupling coefficients Finite element analysis Finite element method Silica Silicon dioxide Surface acoustic waves Thin films Wave dispersion Wave propagation Zinc oxide Zinc oxides |
title | Shear-horizontal surface acoustic wave characteristics of a (110) ZnO/SiO^sub 2^/Si multilayer structure |
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