Antireflection fianite and ZrO2 coatings for solar cells
Fianite is a promising multipurpose material for new electronic technologies owing to its unique combination of physical and chemical properties. It can be used in virtually all of the main technological stages of the production of micro-, opto-, and SHF-electronics; in particular, as a bulk dielect...
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Veröffentlicht in: | Bulletin of the Russian Academy of Sciences. Physics 2011-09, Vol.75 (9), p.1213-1216 |
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creator | Buzynin, A. N. Buzynin, Yu. N. Osiko, V. V. Panov, V. I. Zvonkov, B. N. Chinareva, I. V. Khakaushev, P. E. Trishenkov, M. A. |
description | Fianite is a promising multipurpose material for new electronic technologies owing to its unique combination of physical and chemical properties. It can be used in virtually all of the main technological stages of the production of micro-, opto-, and SHF-electronics; in particular, as a bulk dielectric substrate and a material for buffer layers in heteroepitaxy; as a material for insulating, antireflection, and protective layers in device elements; and as a gate dielectric [1–3]. In this work, we consider the possibilities for using fianite and ZrO
2
as an antireflection coating for silicon solar cells (SCs) and SCs based on InGaAsP heterostructures. |
doi_str_mv | 10.3103/S106287381109005X |
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2
as an antireflection coating for silicon solar cells (SCs) and SCs based on InGaAsP heterostructures.</description><identifier>ISSN: 1062-8738</identifier><identifier>EISSN: 1934-9432</identifier><identifier>DOI: 10.3103/S106287381109005X</identifier><language>eng</language><publisher>Heidelberg: Allerton Press, Inc</publisher><subject>Antireflection coatings ; Buffer layers ; Chemical properties ; Gallium indium arsenide phosphide ; Hadrons ; Heavy Ions ; Heterostructures ; Nuclear Physics ; Photovoltaic cells ; Physics ; Physics and Astronomy ; Proceedings of the XXIII Russian Conference on Electron Microscopy ; Protective coatings ; Silicon wafers ; Solar cells ; Superhigh frequencies ; Zirconium dioxide</subject><ispartof>Bulletin of the Russian Academy of Sciences. Physics, 2011-09, Vol.75 (9), p.1213-1216</ispartof><rights>Allerton Press, Inc. 2011</rights><rights>Bulletin of the Russian Academy of Sciences: Physics is a copyright of Springer, 2011.</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c231X-4cdf181cb437d3b8096ed6fb003f42d44601a4b8b0825854c589a7a50f6a4fe13</citedby><cites>FETCH-LOGICAL-c231X-4cdf181cb437d3b8096ed6fb003f42d44601a4b8b0825854c589a7a50f6a4fe13</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://link.springer.com/content/pdf/10.3103/S106287381109005X$$EPDF$$P50$$Gspringer$$H</linktopdf><linktohtml>$$Uhttps://link.springer.com/10.3103/S106287381109005X$$EHTML$$P50$$Gspringer$$H</linktohtml><link.rule.ids>314,780,784,27923,27924,41487,42556,51318</link.rule.ids></links><search><creatorcontrib>Buzynin, A. N.</creatorcontrib><creatorcontrib>Buzynin, Yu. N.</creatorcontrib><creatorcontrib>Osiko, V. V.</creatorcontrib><creatorcontrib>Panov, V. I.</creatorcontrib><creatorcontrib>Zvonkov, B. N.</creatorcontrib><creatorcontrib>Chinareva, I. V.</creatorcontrib><creatorcontrib>Khakaushev, P. E.</creatorcontrib><creatorcontrib>Trishenkov, M. A.</creatorcontrib><title>Antireflection fianite and ZrO2 coatings for solar cells</title><title>Bulletin of the Russian Academy of Sciences. Physics</title><addtitle>Bull. Russ. Acad. Sci. Phys</addtitle><description>Fianite is a promising multipurpose material for new electronic technologies owing to its unique combination of physical and chemical properties. It can be used in virtually all of the main technological stages of the production of micro-, opto-, and SHF-electronics; in particular, as a bulk dielectric substrate and a material for buffer layers in heteroepitaxy; as a material for insulating, antireflection, and protective layers in device elements; and as a gate dielectric [1–3]. In this work, we consider the possibilities for using fianite and ZrO
2
as an antireflection coating for silicon solar cells (SCs) and SCs based on InGaAsP heterostructures.</description><subject>Antireflection coatings</subject><subject>Buffer layers</subject><subject>Chemical properties</subject><subject>Gallium indium arsenide phosphide</subject><subject>Hadrons</subject><subject>Heavy Ions</subject><subject>Heterostructures</subject><subject>Nuclear Physics</subject><subject>Photovoltaic cells</subject><subject>Physics</subject><subject>Physics and Astronomy</subject><subject>Proceedings of the XXIII Russian Conference on Electron Microscopy</subject><subject>Protective coatings</subject><subject>Silicon wafers</subject><subject>Solar cells</subject><subject>Superhigh frequencies</subject><subject>Zirconium dioxide</subject><issn>1062-8738</issn><issn>1934-9432</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2011</creationdate><recordtype>article</recordtype><sourceid>AFKRA</sourceid><sourceid>BENPR</sourceid><sourceid>CCPQU</sourceid><sourceid>DWQXO</sourceid><recordid>eNp1kEtLAzEUhYMoWKs_wF3A9WhuHjPJshRfUOhCheImZDJJmTImNZku_PemjAtBXN0L9zvncg5C10BuGRB29wKkprJhEoAoQsTmBM1AMV4pzuhp2cu5Ot7P0UXOu0IIRcUMyUUY--T84OzYx4B9b0I_OmxCh9_TmmIbzdiHbcY-JpzjYBK2bhjyJTrzZsju6mfO0dvD_evyqVqtH5-Xi1VlKYNNxW3nQYJtOWs61kqiatfVviWEeU47zmsChreyJZIKKbgVUpnGCOJrw70DNkc3k-8-xc-Dy6PexUMK5aUu-YDTRokjBRNlU8y55NH71H-Y9KWB6GNB-k9BRUMnTS5s2Lr0y_lf0Tcr52XW</recordid><startdate>201109</startdate><enddate>201109</enddate><creator>Buzynin, A. 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subjects | Antireflection coatings Buffer layers Chemical properties Gallium indium arsenide phosphide Hadrons Heavy Ions Heterostructures Nuclear Physics Photovoltaic cells Physics Physics and Astronomy Proceedings of the XXIII Russian Conference on Electron Microscopy Protective coatings Silicon wafers Solar cells Superhigh frequencies Zirconium dioxide |
title | Antireflection fianite and ZrO2 coatings for solar cells |
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