Ion-stimulated desorption from a semiconductor surface containing metal nanodots

Ion-stimulated desorption from a semiconductor surface containing metal nanodots

A model of the mechanism of ion-stimulated desorption of atoms and molecules pre-adsorbed from the surface of wide-band gap samples with a system of metal nanodots is developed. The relaxation processes of vibration-exciting states in adsorbed layer via electronic channel are considered. It is found...

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Veröffentlicht in:Bulletin of the Russian Academy of Sciences. Physics 2012-05, Vol.76 (5), p.516-519
Hauptverfasser: Bazhin, A. I., Grankin, D. V.
Format: Artikel
Sprache:eng
Schlagworte:
Desorption
Hadrons
Heavy Ions
Metal clusters
Nuclear Physics
Physics
Physics and Astronomy
Proceedings of the 20th International Conference “Ion-Surface Interaction (ISI-2011)”
Vibration
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container_title Bulletin of the Russian Academy of Sciences. Physics
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creator Bazhin, A. I.
Grankin, D. V.
description A model of the mechanism of ion-stimulated desorption of atoms and molecules pre-adsorbed from the surface of wide-band gap samples with a system of metal nanodots is developed. The relaxation processes of vibration-exciting states in adsorbed layer via electronic channel are considered. It is found in the model that the presence of nanosized metal clusters can affect the relaxation rate of the vibration excitations on the surface and the velocity of ion-stimulated desorption.
doi_str_mv 10.3103/S1062873812050085
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subjects Desorption
Hadrons
Heavy Ions
Metal clusters
Nuclear Physics
Physics
Physics and Astronomy
Proceedings of the 20th International Conference “Ion-Surface Interaction (ISI-2011)”
Vibration
title Ion-stimulated desorption from a semiconductor surface containing metal nanodots
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