Annealing effects on Ga‐doped ZnO thin films grown by atmospheric spray pyrolysis using diethylzinc solution
Polycrystalline a‐axis oriented Ga‐doped ZnO thin film could be grown on glass substrate by a conventional atmospheric spray pyrolysis at 150 °C using diethylzinc‐based solution. The n‐type Ga‐doped ZnO thin film had a resistivity of 1.5 × 10−3 Ω cm, a carrier concentration of 2.0 × 1020 cm−3 and a...
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| Veröffentlicht in: | Physica status solidi. C 2017-06, Vol.14 (6), p.n/a |
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| container_title | Physica status solidi. C |
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| creator | Yoshino, Kenji Tominaga, Himeka Ide, Akiko Nishioka, Kensuke Naka, Toshio |
| description | Polycrystalline a‐axis oriented Ga‐doped ZnO thin film could be grown on glass substrate by a conventional atmospheric spray pyrolysis at 150 °C using diethylzinc‐based solution. The n‐type Ga‐doped ZnO thin film had a resistivity of 1.5 × 10−3 Ω cm, a carrier concentration of 2.0 × 1020 cm−3 and a mobility of 20.0 cm2 (Vs)−1 at an optimal Ga content of 2 wt.% upon hydrogen annealing at 450 °C. It was assumed that an increase of the n‐type carrier concentration is due to increase oxygen vacancies by reacting hydrogen and oxygen in ZnO from X‐ray photoelectron spectroscopy. |
| doi_str_mv | 10.1002/pssc.201600177 |
| format | Article |
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The n‐type Ga‐doped ZnO thin film had a resistivity of 1.5 × 10−3 Ω cm, a carrier concentration of 2.0 × 1020 cm−3 and a mobility of 20.0 cm2 (Vs)−1 at an optimal Ga content of 2 wt.% upon hydrogen annealing at 450 °C. It was assumed that an increase of the n‐type carrier concentration is due to increase oxygen vacancies by reacting hydrogen and oxygen in ZnO from X‐ray photoelectron spectroscopy.</description><identifier>ISSN: 1862-6351</identifier><identifier>EISSN: 1610-1642</identifier><identifier>DOI: 10.1002/pssc.201600177</identifier><language>eng</language><publisher>Berlin: WILEY‐VCH Verlag Berlin GmbH</publisher><subject>Annealing ; Carrier density ; diethyl zinc ; Glass substrates ; Photoelectron spectroscopy ; Photovoltaic cells ; Spray pyrolysis ; Thin films ; Vacancies ; Zinc oxide ; ZnO</subject><ispartof>Physica status solidi. C, 2017-06, Vol.14 (6), p.n/a</ispartof><rights>2017 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim</rights><rights>2017 WILEY-VCH Verlag GmbH & Co. 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It was assumed that an increase of the n‐type carrier concentration is due to increase oxygen vacancies by reacting hydrogen and oxygen in ZnO from X‐ray photoelectron spectroscopy.</description><subject>Annealing</subject><subject>Carrier density</subject><subject>diethyl zinc</subject><subject>Glass substrates</subject><subject>Photoelectron spectroscopy</subject><subject>Photovoltaic cells</subject><subject>Spray pyrolysis</subject><subject>Thin films</subject><subject>Vacancies</subject><subject>Zinc oxide</subject><subject>ZnO</subject><issn>1862-6351</issn><issn>1610-1642</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2017</creationdate><recordtype>article</recordtype><recordid>eNqFkEFLwzAYhoMoOKdXzwHPnV-yNmmPY-gUBhOmFy8ha5Ito0tq0jLqyZ_gb_SX2DHRo6fvPTzP-8GL0DWBEQGgt3WM5YgCYQCE8xM0IIxAQlhKT_ucM5qwcUbO0UWMW4Bx1pMD5CbOaVlZt8baGF02EXuHZ_Lr41P5Wiv86ha42ViHja12Ea-D3zu86rBsdj7WGx1siWMdZIfrLviqizbiNh76lNXNpqveresJX7WN9e4SnRlZRX31c4fo5f7uefqQzBezx-lknpSUU56khaacA1FUcZUqCatUZYySjDPI81xTkgLnlOY5l6nkPWS4YSWXWqlSSzMeoptjbx38W6tjI7a-Da5_KUhBizzjAFlPjY5UGXyMQRtRB7uToRMExGFTcdhU_G7aC8VR2NtKd__Q4mm5nP653-yifhk</recordid><startdate>201706</startdate><enddate>201706</enddate><creator>Yoshino, Kenji</creator><creator>Tominaga, Himeka</creator><creator>Ide, Akiko</creator><creator>Nishioka, Kensuke</creator><creator>Naka, Toshio</creator><general>WILEY‐VCH Verlag Berlin GmbH</general><general>Wiley Subscription Services, Inc</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7U5</scope><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope></search><sort><creationdate>201706</creationdate><title>Annealing effects on Ga‐doped ZnO thin films grown by atmospheric spray pyrolysis using diethylzinc solution</title><author>Yoshino, Kenji ; Tominaga, Himeka ; Ide, Akiko ; Nishioka, Kensuke ; Naka, Toshio</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c2727-49e27701d2d7d4da0b4d56215760888e21407722887a4a7d7df7f6c7aeddceaf3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2017</creationdate><topic>Annealing</topic><topic>Carrier density</topic><topic>diethyl zinc</topic><topic>Glass substrates</topic><topic>Photoelectron spectroscopy</topic><topic>Photovoltaic cells</topic><topic>Spray pyrolysis</topic><topic>Thin films</topic><topic>Vacancies</topic><topic>Zinc oxide</topic><topic>ZnO</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Yoshino, Kenji</creatorcontrib><creatorcontrib>Tominaga, Himeka</creatorcontrib><creatorcontrib>Ide, Akiko</creatorcontrib><creatorcontrib>Nishioka, Kensuke</creatorcontrib><creatorcontrib>Naka, Toshio</creatorcontrib><collection>CrossRef</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Physica status solidi. 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The n‐type Ga‐doped ZnO thin film had a resistivity of 1.5 × 10−3 Ω cm, a carrier concentration of 2.0 × 1020 cm−3 and a mobility of 20.0 cm2 (Vs)−1 at an optimal Ga content of 2 wt.% upon hydrogen annealing at 450 °C. It was assumed that an increase of the n‐type carrier concentration is due to increase oxygen vacancies by reacting hydrogen and oxygen in ZnO from X‐ray photoelectron spectroscopy.</abstract><cop>Berlin</cop><pub>WILEY‐VCH Verlag Berlin GmbH</pub><doi>10.1002/pssc.201600177</doi><tpages>4</tpages></addata></record> |
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| subjects | Annealing Carrier density diethyl zinc Glass substrates Photoelectron spectroscopy Photovoltaic cells Spray pyrolysis Thin films Vacancies Zinc oxide ZnO |
| title | Annealing effects on Ga‐doped ZnO thin films grown by atmospheric spray pyrolysis using diethylzinc solution |
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