High-Power -Band 5-b GaN Phase Shifter With Monolithic Integrated E/D HEMTs Control Logic

A high-power X-band GaN-based 5-b digital phase shifter with control logic circuit on-chip is demonstrated for the first time, which is implemented with monolithic integrated GaN E/D HEMTs fabrication process. Gate trench etching together with Al2O3 as gate dielectric is used to form the gate of the...

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Veröffentlicht in:	IEEE transactions on electron devices 2017-09, Vol.64 (9), p.3627-3633
Hauptverfasser:	Luo, Weijun, Liu, Hui, Zhang, Zongjing, Sun, Pengpeng, Liu, Xinyu
Format:	Artikel
Sprache:	eng
Schlagworte:	Aluminum oxide Continuity (mathematics) Continuous radiation Control logic circuit Etching Gallium nitride GaN HEMTs HEMTs High electron mobility transistors high pass/low pass Insertion loss Logic Logic circuits Logic gates MODFETs Phase error phase shifter Phase shifters Semiconductor devices switched filter Switches Wave power X-band
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