Dislocation Reduction in HgCdTe Mesa Structures Formed on CdTe/Si
Mercury cadmium telluride (MCT) epilayers have been grown on CdTe/Si using molecular beam epitaxy and 8- μ m-deep mesa structures formed using plasma etching. Following previous work done on etching mesas and subjecting material to thermal cycle annealing, we set out to determine the limits and unde...
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| Veröffentlicht in: | Journal of electronic materials 2016-09, Vol.45 (9), p.4668-4673 |
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| container_title | Journal of electronic materials |
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| creator | Simingalam, Sina Pattison, James Chen, Yuanping Wijewarnasuriya, Priyalal Rao, Mulpuri V. |
| description | Mercury cadmium telluride (MCT) epilayers have been grown on CdTe/Si using molecular beam epitaxy and 8-
μ
m-deep mesa structures formed using plasma etching. Following previous work done on etching mesas and subjecting material to thermal cycle annealing, we set out to determine the limits and underlying physics of dislocation reduction in mesa-etched and annealed MCT. This paper describes the dependence of dislocation reduction on anneal time, cycle annealing, temperature, and etch depth. We show dislocation density reduction below 3 × 10
5
cm
−2
in 10-
μ
m-wide, long-bar mesas along the
[
0
1
¯
1
]
orientation with only a 5-min anneal at 400°C. |
| doi_str_mv | 10.1007/s11664-016-4544-z |
| format | Article |
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μ
m-deep mesa structures formed using plasma etching. Following previous work done on etching mesas and subjecting material to thermal cycle annealing, we set out to determine the limits and underlying physics of dislocation reduction in mesa-etched and annealed MCT. This paper describes the dependence of dislocation reduction on anneal time, cycle annealing, temperature, and etch depth. We show dislocation density reduction below 3 × 10
5
cm
−2
in 10-
μ
m-wide, long-bar mesas along the
[
0
1
¯
1
]
orientation with only a 5-min anneal at 400°C.</description><identifier>ISSN: 0361-5235</identifier><identifier>EISSN: 1543-186X</identifier><identifier>DOI: 10.1007/s11664-016-4544-z</identifier><language>eng</language><publisher>New York: Springer US</publisher><subject>Annealing ; Cadmium tellurides ; Characterization and Evaluation of Materials ; Chemistry and Materials Science ; Dislocation density ; Electronics and Microelectronics ; Epitaxial growth ; Instrumentation ; Intermetallic compounds ; Materials Science ; Mercury cadmium telluride ; Mercury cadmium tellurides ; Mesas ; Molecular beam epitaxy ; Optical and Electronic Materials ; Plasma (physics) ; Plasma etching ; Reduction ; Solid State Physics</subject><ispartof>Journal of electronic materials, 2016-09, Vol.45 (9), p.4668-4673</ispartof><rights>The Minerals, Metals & Materials Society 2016</rights><rights>Journal of Electronic Materials is a copyright of Springer, 2016.</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c316t-4b0f5da4998e43e392449f25f6c2f227f733d7c682180d141b45c5c8f45555143</citedby><cites>FETCH-LOGICAL-c316t-4b0f5da4998e43e392449f25f6c2f227f733d7c682180d141b45c5c8f45555143</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://link.springer.com/content/pdf/10.1007/s11664-016-4544-z$$EPDF$$P50$$Gspringer$$H</linktopdf><linktohtml>$$Uhttps://link.springer.com/10.1007/s11664-016-4544-z$$EHTML$$P50$$Gspringer$$H</linktohtml><link.rule.ids>314,776,780,27901,27902,41464,42533,51294</link.rule.ids></links><search><creatorcontrib>Simingalam, Sina</creatorcontrib><creatorcontrib>Pattison, James</creatorcontrib><creatorcontrib>Chen, Yuanping</creatorcontrib><creatorcontrib>Wijewarnasuriya, Priyalal</creatorcontrib><creatorcontrib>Rao, Mulpuri V.</creatorcontrib><title>Dislocation Reduction in HgCdTe Mesa Structures Formed on CdTe/Si</title><title>Journal of electronic materials</title><addtitle>Journal of Elec Materi</addtitle><description>Mercury cadmium telluride (MCT) epilayers have been grown on CdTe/Si using molecular beam epitaxy and 8-
μ
m-deep mesa structures formed using plasma etching. Following previous work done on etching mesas and subjecting material to thermal cycle annealing, we set out to determine the limits and underlying physics of dislocation reduction in mesa-etched and annealed MCT. This paper describes the dependence of dislocation reduction on anneal time, cycle annealing, temperature, and etch depth. We show dislocation density reduction below 3 × 10
5
cm
−2
in 10-
μ
m-wide, long-bar mesas along the
[
0
1
¯
1
]
orientation with only a 5-min anneal at 400°C.</description><subject>Annealing</subject><subject>Cadmium tellurides</subject><subject>Characterization and Evaluation of Materials</subject><subject>Chemistry and Materials Science</subject><subject>Dislocation density</subject><subject>Electronics and Microelectronics</subject><subject>Epitaxial growth</subject><subject>Instrumentation</subject><subject>Intermetallic compounds</subject><subject>Materials Science</subject><subject>Mercury cadmium telluride</subject><subject>Mercury cadmium tellurides</subject><subject>Mesas</subject><subject>Molecular beam epitaxy</subject><subject>Optical and Electronic Materials</subject><subject>Plasma (physics)</subject><subject>Plasma etching</subject><subject>Reduction</subject><subject>Solid State Physics</subject><issn>0361-5235</issn><issn>1543-186X</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2016</creationdate><recordtype>article</recordtype><sourceid>8G5</sourceid><sourceid>BENPR</sourceid><sourceid>GUQSH</sourceid><sourceid>M2O</sourceid><recordid>eNp1kM9LwzAUx4MoOKd_gLeC57i85CVtj2M6J0wEN8Fb6NJkdGztTNqD--tNrQcvvst78P3x4EPILbB7YCydBAClkDJQFCUiPZ2REUgUFDL1cU5GTCigkgt5Sa5C2DEGEjIYkelDFfaNKdqqqZM3W3bm56rqZLGdlWubvNhQJKvWR6HzNiTzxh9smURPL09W1TW5cMU-2JvfPSbv88f1bEGXr0_Ps-mSGgGqpbhhTpYF5nlmUViRc8TccemU4Y7z1KVClKlRGYeMlYCwQWmkyRzKOIBiTO6G3qNvPjsbWr1rOl_HlxpyHnOplCK6YHAZ34TgrdNHXx0K_6WB6Z6UHkjpSEr3pPQpZviQCdFbb63_0_xv6Bv9BGmO</recordid><startdate>20160901</startdate><enddate>20160901</enddate><creator>Simingalam, Sina</creator><creator>Pattison, James</creator><creator>Chen, Yuanping</creator><creator>Wijewarnasuriya, Priyalal</creator><creator>Rao, Mulpuri V.</creator><general>Springer US</general><general>Springer Nature B.V</general><scope>AAYXX</scope><scope>CITATION</scope><scope>3V.</scope><scope>7XB</scope><scope>88I</scope><scope>8AF</scope><scope>8AO</scope><scope>8FE</scope><scope>8FG</scope><scope>8FK</scope><scope>8G5</scope><scope>ABJCF</scope><scope>ABUWG</scope><scope>AFKRA</scope><scope>ARAPS</scope><scope>AZQEC</scope><scope>BENPR</scope><scope>BGLVJ</scope><scope>CCPQU</scope><scope>D1I</scope><scope>DWQXO</scope><scope>GNUQQ</scope><scope>GUQSH</scope><scope>HCIFZ</scope><scope>KB.</scope><scope>L6V</scope><scope>M2O</scope><scope>M2P</scope><scope>M7S</scope><scope>MBDVC</scope><scope>P5Z</scope><scope>P62</scope><scope>PDBOC</scope><scope>PQEST</scope><scope>PQQKQ</scope><scope>PQUKI</scope><scope>PRINS</scope><scope>PTHSS</scope><scope>Q9U</scope><scope>S0X</scope></search><sort><creationdate>20160901</creationdate><title>Dislocation Reduction in HgCdTe Mesa Structures Formed on CdTe/Si</title><author>Simingalam, Sina ; Pattison, James ; Chen, Yuanping ; Wijewarnasuriya, Priyalal ; Rao, Mulpuri V.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c316t-4b0f5da4998e43e392449f25f6c2f227f733d7c682180d141b45c5c8f45555143</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2016</creationdate><topic>Annealing</topic><topic>Cadmium tellurides</topic><topic>Characterization and Evaluation of Materials</topic><topic>Chemistry and Materials Science</topic><topic>Dislocation density</topic><topic>Electronics and Microelectronics</topic><topic>Epitaxial growth</topic><topic>Instrumentation</topic><topic>Intermetallic compounds</topic><topic>Materials Science</topic><topic>Mercury cadmium telluride</topic><topic>Mercury cadmium tellurides</topic><topic>Mesas</topic><topic>Molecular beam epitaxy</topic><topic>Optical and Electronic Materials</topic><topic>Plasma (physics)</topic><topic>Plasma etching</topic><topic>Reduction</topic><topic>Solid State Physics</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Simingalam, Sina</creatorcontrib><creatorcontrib>Pattison, James</creatorcontrib><creatorcontrib>Chen, Yuanping</creatorcontrib><creatorcontrib>Wijewarnasuriya, Priyalal</creatorcontrib><creatorcontrib>Rao, Mulpuri V.</creatorcontrib><collection>CrossRef</collection><collection>ProQuest Central (Corporate)</collection><collection>ProQuest Central (purchase pre-March 2016)</collection><collection>Science Database (Alumni Edition)</collection><collection>STEM Database</collection><collection>ProQuest Pharma Collection</collection><collection>ProQuest SciTech Collection</collection><collection>ProQuest Technology Collection</collection><collection>ProQuest Central (Alumni) (purchase pre-March 2016)</collection><collection>Research Library (Alumni Edition)</collection><collection>Materials Science & Engineering Collection</collection><collection>ProQuest Central (Alumni Edition)</collection><collection>ProQuest Central UK/Ireland</collection><collection>Advanced Technologies & Aerospace Collection</collection><collection>ProQuest Central Essentials</collection><collection>ProQuest Central</collection><collection>Technology Collection (ProQuest)</collection><collection>ProQuest One Community College</collection><collection>ProQuest Materials Science Collection</collection><collection>ProQuest Central Korea</collection><collection>ProQuest Central Student</collection><collection>Research Library Prep</collection><collection>SciTech Premium Collection</collection><collection>Materials Science Database</collection><collection>ProQuest Engineering Collection</collection><collection>Research Library</collection><collection>Science Database</collection><collection>Engineering Database</collection><collection>Research Library (Corporate)</collection><collection>Advanced Technologies & Aerospace Database</collection><collection>ProQuest Advanced Technologies & Aerospace Collection</collection><collection>Materials Science Collection</collection><collection>ProQuest One Academic Eastern Edition (DO NOT USE)</collection><collection>ProQuest One Academic</collection><collection>ProQuest One Academic UKI Edition</collection><collection>ProQuest Central China</collection><collection>Engineering Collection</collection><collection>ProQuest Central Basic</collection><collection>SIRS Editorial</collection><jtitle>Journal of electronic materials</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Simingalam, Sina</au><au>Pattison, James</au><au>Chen, Yuanping</au><au>Wijewarnasuriya, Priyalal</au><au>Rao, Mulpuri V.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Dislocation Reduction in HgCdTe Mesa Structures Formed on CdTe/Si</atitle><jtitle>Journal of electronic materials</jtitle><stitle>Journal of Elec Materi</stitle><date>2016-09-01</date><risdate>2016</risdate><volume>45</volume><issue>9</issue><spage>4668</spage><epage>4673</epage><pages>4668-4673</pages><issn>0361-5235</issn><eissn>1543-186X</eissn><abstract>Mercury cadmium telluride (MCT) epilayers have been grown on CdTe/Si using molecular beam epitaxy and 8-
μ
m-deep mesa structures formed using plasma etching. Following previous work done on etching mesas and subjecting material to thermal cycle annealing, we set out to determine the limits and underlying physics of dislocation reduction in mesa-etched and annealed MCT. This paper describes the dependence of dislocation reduction on anneal time, cycle annealing, temperature, and etch depth. We show dislocation density reduction below 3 × 10
5
cm
−2
in 10-
μ
m-wide, long-bar mesas along the
[
0
1
¯
1
]
orientation with only a 5-min anneal at 400°C.</abstract><cop>New York</cop><pub>Springer US</pub><doi>10.1007/s11664-016-4544-z</doi><tpages>6</tpages></addata></record> |
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| subjects | Annealing Cadmium tellurides Characterization and Evaluation of Materials Chemistry and Materials Science Dislocation density Electronics and Microelectronics Epitaxial growth Instrumentation Intermetallic compounds Materials Science Mercury cadmium telluride Mercury cadmium tellurides Mesas Molecular beam epitaxy Optical and Electronic Materials Plasma (physics) Plasma etching Reduction Solid State Physics |
| title | Dislocation Reduction in HgCdTe Mesa Structures Formed on CdTe/Si |
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