Design, Fabrication, and Characterization of Dense Compressible Microinterconnects
This paper presents gold passivated NiW compressible microinterconnects (CMIs) with 75 μm height and 150 μm in-line pitch. The CMIs are batch fabricated using CMOS-compatible processes. The fabricated CMIs have a measured compliance of up to 13.12 mm/N and demonstrate 45 μm elastic vertical range of...
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| Veröffentlicht in: | IEEE transactions on components, packaging, and manufacturing technology (2011) packaging, and manufacturing technology (2011), 2017-07, Vol.7 (7), p.1003-1010 |
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| container_title | IEEE transactions on components, packaging, and manufacturing technology (2011) |
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| creator | Jo, Paul K. Zia, Muneeb Gonzalez, Joe L. Hanju Oh Bakir, Muhannad S. |
| description | This paper presents gold passivated NiW compressible microinterconnects (CMIs) with 75 μm height and 150 μm in-line pitch. The CMIs are batch fabricated using CMOS-compatible processes. The fabricated CMIs have a measured compliance of up to 13.12 mm/N and demonstrate 45 μm elastic vertical range of motion. Moreover, the CMIs are shown to return to their original geometrical profile after several deflections and consequently are able to maintain contact with their corresponding pads at all times. The measured four-point resistance of a CMI, which includes contact resistance, is as low as 176.3 mΩ. |
| doi_str_mv | 10.1109/TCPMT.2017.2688281 |
| format | Article |
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The CMIs are batch fabricated using CMOS-compatible processes. The fabricated CMIs have a measured compliance of up to 13.12 mm/N and demonstrate 45 μm elastic vertical range of motion. Moreover, the CMIs are shown to return to their original geometrical profile after several deflections and consequently are able to maintain contact with their corresponding pads at all times. The measured four-point resistance of a CMI, which includes contact resistance, is as low as 176.3 mΩ.</description><subject>3-D IC</subject><subject>CMOS</subject><subject>Compressibility</subject><subject>Contact resistance</subject><subject>Fabrication</subject><subject>Finite element analysis</subject><subject>Gold</subject><subject>interconnect</subject><subject>microelectromechanical system (MEMS)</subject><subject>microspring</subject><subject>Modulus of elasticity</subject><subject>multichips</subject><subject>Packaging</subject><subject>probe tip</subject><subject>Resists</subject><subject>Stress</subject><subject>Substrates</subject><subject>temporary interconnection</subject><issn>2156-3950</issn><issn>2156-3985</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2017</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNo9kM1OwzAQhC0EElXpC8AlEldS1nbs2EeUUkBqBULlbDnJBly1SbHTA3163B91L7tezcxaHyG3FMaUgn5cFB_zxZgBzcdMKsUUvSADRoVMuVbi8jwLuCajEJYQSyjIgQ_I5wSD-24fkqktvats77r4sG2dFD_W26pH73aHbdI1yQTbgEnRrTceQ3DlCpO5q3zn2qirurbFqg835Kqxq4CjUx-Sr-nzonhNZ-8vb8XTLK2YFn1qQSqutSoz3ZRolW6wVlLkCnMmqMpKaLiVnEpgClCwus6zhldU2LwEajUfkvtj7sZ3v1sMvVl2W9_Gk4ZqBpmUMSeq2FEVvxmCx8ZsvFtb_2comD0-c8Bn9vjMCV803R1NDhHPhjymcgD-D85Eazg</recordid><startdate>20170701</startdate><enddate>20170701</enddate><creator>Jo, Paul K.</creator><creator>Zia, Muneeb</creator><creator>Gonzalez, Joe L.</creator><creator>Hanju Oh</creator><creator>Bakir, Muhannad S.</creator><general>IEEE</general><general>The Institute of Electrical and Electronics Engineers, Inc. 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| source | IEEE Electronic Library (IEL) |
| subjects | 3-D IC CMOS Compressibility Contact resistance Fabrication Finite element analysis Gold interconnect microelectromechanical system (MEMS) microspring Modulus of elasticity multichips Packaging probe tip Resists Stress Substrates temporary interconnection |
| title | Design, Fabrication, and Characterization of Dense Compressible Microinterconnects |
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