Correlation of Etch Pits and Dislocations in As-grown and Thermal Cycle-Annealed HgCdTe(211) Films

This paper reports observations of the different types of etch pits and dislocations present in thick HgCdTe (211) layers grown by molecular beam epitaxy on CdTe/Si (211) composite substrates. Dislocation analysis for as-grown and thermal cycle-annealed samples has been carried out using bright-fiel...

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Veröffentlicht in:	Journal of electronic materials 2017-08, Vol.46 (8), p.5007-5019
Hauptverfasser:	Vaghayenegar, M., Jacobs, R. N., Benson, J. D., Stoltz, A. J., Almeida, L. A., Smith, David J.
Format:	Artikel
Sprache:	eng
Schlagworte:	Bright annealing Buffers Burgers vector Characterization and Evaluation of Materials Chemistry and Materials Science Crystal defects Crystallography Density Dislocation mobility Electronics and Microelectronics Epitaxial growth Etch pits Etching Instrumentation Materials Science Mercury cadmium tellurides Molecular beam epitaxy Optical and Electronic Materials Segments Silicon substrates Solid State Physics Transmission electron microscopy
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