Current Analysis and Modeling of Fullerene Single-Electron Transistor at Room Temperature
Single-electron transistors (SETs) are interesting electronic devices that have become key elements in modern nanoelectronic systems. SETs operate quickly because they use individual electrons, with the number transferred playing a key role in their switching behavior. However, rapid transmission of...
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| Veröffentlicht in: | Journal of electronic materials 2017-07, Vol.46 (7), p.4294-4298 |
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| creator | Khadem Hosseini, Vahideh Ahmadi, Mohammad Taghi Afrang, Saeid Ismail, Razali |
| description | Single-electron transistors (SETs) are interesting electronic devices that have become key elements in modern nanoelectronic systems. SETs operate quickly because they use individual electrons, with the number transferred playing a key role in their switching behavior. However, rapid transmission of electrons can cause their accumulation at the island, affecting the
I
–
V
characteristic. Selection of fullerene as a nanoscale zero-dimensional material with high stability, and controllable size in the fabrication process, can overcome this charge accumulation issue and improve the reliability of SETs. Herein, the current in a fullerene SET is modeled and compared with experimental data for a silicon SET. Furthermore, a weaker Coulomb staircase and improved reliability are reported. Moreover, the applied gate voltage and fullerene diameter are found to be directly associated with the
I
–
V
curve, enabling the desired current to be achieved by controlling the fullerene diameter. |
| doi_str_mv | 10.1007/s11664-017-5354-7 |
| format | Article |
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I
–
V
characteristic. Selection of fullerene as a nanoscale zero-dimensional material with high stability, and controllable size in the fabrication process, can overcome this charge accumulation issue and improve the reliability of SETs. Herein, the current in a fullerene SET is modeled and compared with experimental data for a silicon SET. Furthermore, a weaker Coulomb staircase and improved reliability are reported. Moreover, the applied gate voltage and fullerene diameter are found to be directly associated with the
I
–
V
curve, enabling the desired current to be achieved by controlling the fullerene diameter.</description><identifier>ISSN: 0361-5235</identifier><identifier>EISSN: 1543-186X</identifier><identifier>DOI: 10.1007/s11664-017-5354-7</identifier><language>eng</language><publisher>New York: Springer US</publisher><subject>Characterization and Evaluation of Materials ; Chemistry and Materials Science ; Control stability ; Coulomb friction ; Dimensional stability ; Electric potential ; Electronic devices ; Electronics and Microelectronics ; Fullerenes ; Instrumentation ; Materials Science ; Modelling ; Nanostructure ; Optical and Electronic Materials ; Reliability ; Room temperature ; Semiconductor devices ; Silicon ; Single-electron transistors ; Solid State Physics ; Switching ; Temperature effects ; Transistors</subject><ispartof>Journal of electronic materials, 2017-07, Vol.46 (7), p.4294-4298</ispartof><rights>The Minerals, Metals & Materials Society 2017</rights><rights>Journal of Electronic Materials is a copyright of Springer, 2017.</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c316t-6a1c2b4d436362bbcc265f7e1b79c80c171f0af4073265690ac3313200665ba03</citedby><cites>FETCH-LOGICAL-c316t-6a1c2b4d436362bbcc265f7e1b79c80c171f0af4073265690ac3313200665ba03</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://link.springer.com/content/pdf/10.1007/s11664-017-5354-7$$EPDF$$P50$$Gspringer$$H</linktopdf><linktohtml>$$Uhttps://link.springer.com/10.1007/s11664-017-5354-7$$EHTML$$P50$$Gspringer$$H</linktohtml><link.rule.ids>314,780,784,27924,27925,41488,42557,51319</link.rule.ids></links><search><creatorcontrib>Khadem Hosseini, Vahideh</creatorcontrib><creatorcontrib>Ahmadi, Mohammad Taghi</creatorcontrib><creatorcontrib>Afrang, Saeid</creatorcontrib><creatorcontrib>Ismail, Razali</creatorcontrib><title>Current Analysis and Modeling of Fullerene Single-Electron Transistor at Room Temperature</title><title>Journal of electronic materials</title><addtitle>Journal of Elec Materi</addtitle><description>Single-electron transistors (SETs) are interesting electronic devices that have become key elements in modern nanoelectronic systems. SETs operate quickly because they use individual electrons, with the number transferred playing a key role in their switching behavior. However, rapid transmission of electrons can cause their accumulation at the island, affecting the
I
–
V
characteristic. Selection of fullerene as a nanoscale zero-dimensional material with high stability, and controllable size in the fabrication process, can overcome this charge accumulation issue and improve the reliability of SETs. Herein, the current in a fullerene SET is modeled and compared with experimental data for a silicon SET. Furthermore, a weaker Coulomb staircase and improved reliability are reported. Moreover, the applied gate voltage and fullerene diameter are found to be directly associated with the
I
–
V
curve, enabling the desired current to be achieved by controlling the fullerene diameter.</description><subject>Characterization and Evaluation of Materials</subject><subject>Chemistry and Materials Science</subject><subject>Control stability</subject><subject>Coulomb friction</subject><subject>Dimensional stability</subject><subject>Electric potential</subject><subject>Electronic devices</subject><subject>Electronics and Microelectronics</subject><subject>Fullerenes</subject><subject>Instrumentation</subject><subject>Materials Science</subject><subject>Modelling</subject><subject>Nanostructure</subject><subject>Optical and Electronic Materials</subject><subject>Reliability</subject><subject>Room temperature</subject><subject>Semiconductor devices</subject><subject>Silicon</subject><subject>Single-electron transistors</subject><subject>Solid State Physics</subject><subject>Switching</subject><subject>Temperature effects</subject><subject>Transistors</subject><issn>0361-5235</issn><issn>1543-186X</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2017</creationdate><recordtype>article</recordtype><sourceid>8G5</sourceid><sourceid>ABUWG</sourceid><sourceid>AFKRA</sourceid><sourceid>AZQEC</sourceid><sourceid>BENPR</sourceid><sourceid>CCPQU</sourceid><sourceid>DWQXO</sourceid><sourceid>GNUQQ</sourceid><sourceid>GUQSH</sourceid><sourceid>M2O</sourceid><recordid>eNp1kMFKAzEQhoMoWKsP4C3gOTqz2SS7x1JaFSqCrqCnkE2zpWW7qcnuoW9vynrw4mlg5vt_mI-QW4R7BFAPEVHKnAEqJrjImTojExQ5Z1jIz3MyAS6RiYyLS3IV4w4ABRY4IV_zIQTX9XTWmfYYt5Gabk1f_Nq1225DfUOXQ9u6hDj6njatY4vW2T74jlbBdCnR-0BNT9-839PK7Q8umH4I7ppcNKaN7uZ3TsnHclHNn9jq9fF5Plsxy1H2TBq0WZ2vcy65zOra2kyKRjmsVWkLsKiwAdPkoHg6yBKM5Rx5BiClqA3wKbkbew_Bfw8u9nrnh5C-iRpLkFyUBS8ShSNlg48xuEYfwnZvwlEj6JNBPRrUyaA-GdQqZbIxExPbbVz40_xv6Ac8NnLy</recordid><startdate>20170701</startdate><enddate>20170701</enddate><creator>Khadem Hosseini, Vahideh</creator><creator>Ahmadi, Mohammad Taghi</creator><creator>Afrang, Saeid</creator><creator>Ismail, Razali</creator><general>Springer US</general><general>Springer Nature B.V</general><scope>AAYXX</scope><scope>CITATION</scope><scope>3V.</scope><scope>7XB</scope><scope>88I</scope><scope>8AF</scope><scope>8AO</scope><scope>8FE</scope><scope>8FG</scope><scope>8FK</scope><scope>8G5</scope><scope>ABJCF</scope><scope>ABUWG</scope><scope>AFKRA</scope><scope>ARAPS</scope><scope>AZQEC</scope><scope>BENPR</scope><scope>BGLVJ</scope><scope>CCPQU</scope><scope>D1I</scope><scope>DWQXO</scope><scope>GNUQQ</scope><scope>GUQSH</scope><scope>HCIFZ</scope><scope>KB.</scope><scope>L6V</scope><scope>M2O</scope><scope>M2P</scope><scope>M7S</scope><scope>MBDVC</scope><scope>P5Z</scope><scope>P62</scope><scope>PDBOC</scope><scope>PQEST</scope><scope>PQQKQ</scope><scope>PQUKI</scope><scope>PRINS</scope><scope>PTHSS</scope><scope>Q9U</scope><scope>S0X</scope></search><sort><creationdate>20170701</creationdate><title>Current Analysis and Modeling of Fullerene Single-Electron Transistor at Room Temperature</title><author>Khadem Hosseini, Vahideh ; Ahmadi, Mohammad Taghi ; Afrang, Saeid ; Ismail, Razali</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c316t-6a1c2b4d436362bbcc265f7e1b79c80c171f0af4073265690ac3313200665ba03</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2017</creationdate><topic>Characterization and Evaluation of Materials</topic><topic>Chemistry and Materials Science</topic><topic>Control stability</topic><topic>Coulomb friction</topic><topic>Dimensional stability</topic><topic>Electric potential</topic><topic>Electronic devices</topic><topic>Electronics and Microelectronics</topic><topic>Fullerenes</topic><topic>Instrumentation</topic><topic>Materials Science</topic><topic>Modelling</topic><topic>Nanostructure</topic><topic>Optical and Electronic Materials</topic><topic>Reliability</topic><topic>Room temperature</topic><topic>Semiconductor devices</topic><topic>Silicon</topic><topic>Single-electron transistors</topic><topic>Solid State Physics</topic><topic>Switching</topic><topic>Temperature effects</topic><topic>Transistors</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Khadem Hosseini, Vahideh</creatorcontrib><creatorcontrib>Ahmadi, Mohammad Taghi</creatorcontrib><creatorcontrib>Afrang, Saeid</creatorcontrib><creatorcontrib>Ismail, Razali</creatorcontrib><collection>CrossRef</collection><collection>ProQuest Central (Corporate)</collection><collection>ProQuest Central (purchase pre-March 2016)</collection><collection>Science Database (Alumni Edition)</collection><collection>STEM Database</collection><collection>ProQuest Pharma Collection</collection><collection>ProQuest SciTech Collection</collection><collection>ProQuest Technology Collection</collection><collection>ProQuest Central (Alumni) (purchase pre-March 2016)</collection><collection>Research Library (Alumni Edition)</collection><collection>Materials Science & Engineering Collection</collection><collection>ProQuest Central (Alumni Edition)</collection><collection>ProQuest Central UK/Ireland</collection><collection>Advanced Technologies & Aerospace Collection</collection><collection>ProQuest Central Essentials</collection><collection>ProQuest Central</collection><collection>Technology Collection</collection><collection>ProQuest One Community College</collection><collection>ProQuest Materials Science Collection</collection><collection>ProQuest Central Korea</collection><collection>ProQuest Central Student</collection><collection>Research Library Prep</collection><collection>SciTech Premium Collection</collection><collection>Materials Science Database</collection><collection>ProQuest Engineering Collection</collection><collection>Research Library</collection><collection>Science Database</collection><collection>Engineering Database</collection><collection>Research Library (Corporate)</collection><collection>Advanced Technologies & Aerospace Database</collection><collection>ProQuest Advanced Technologies & Aerospace Collection</collection><collection>Materials Science Collection</collection><collection>ProQuest One Academic Eastern Edition (DO NOT USE)</collection><collection>ProQuest One Academic</collection><collection>ProQuest One Academic UKI Edition</collection><collection>ProQuest Central China</collection><collection>Engineering Collection</collection><collection>ProQuest Central Basic</collection><collection>SIRS Editorial</collection><jtitle>Journal of electronic materials</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Khadem Hosseini, Vahideh</au><au>Ahmadi, Mohammad Taghi</au><au>Afrang, Saeid</au><au>Ismail, Razali</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Current Analysis and Modeling of Fullerene Single-Electron Transistor at Room Temperature</atitle><jtitle>Journal of electronic materials</jtitle><stitle>Journal of Elec Materi</stitle><date>2017-07-01</date><risdate>2017</risdate><volume>46</volume><issue>7</issue><spage>4294</spage><epage>4298</epage><pages>4294-4298</pages><issn>0361-5235</issn><eissn>1543-186X</eissn><abstract>Single-electron transistors (SETs) are interesting electronic devices that have become key elements in modern nanoelectronic systems. SETs operate quickly because they use individual electrons, with the number transferred playing a key role in their switching behavior. However, rapid transmission of electrons can cause their accumulation at the island, affecting the
I
–
V
characteristic. Selection of fullerene as a nanoscale zero-dimensional material with high stability, and controllable size in the fabrication process, can overcome this charge accumulation issue and improve the reliability of SETs. Herein, the current in a fullerene SET is modeled and compared with experimental data for a silicon SET. Furthermore, a weaker Coulomb staircase and improved reliability are reported. Moreover, the applied gate voltage and fullerene diameter are found to be directly associated with the
I
–
V
curve, enabling the desired current to be achieved by controlling the fullerene diameter.</abstract><cop>New York</cop><pub>Springer US</pub><doi>10.1007/s11664-017-5354-7</doi><tpages>5</tpages></addata></record> |
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| subjects | Characterization and Evaluation of Materials Chemistry and Materials Science Control stability Coulomb friction Dimensional stability Electric potential Electronic devices Electronics and Microelectronics Fullerenes Instrumentation Materials Science Modelling Nanostructure Optical and Electronic Materials Reliability Room temperature Semiconductor devices Silicon Single-electron transistors Solid State Physics Switching Temperature effects Transistors |
| title | Current Analysis and Modeling of Fullerene Single-Electron Transistor at Room Temperature |
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