19‐6: Invited Paper: A Novel Process for Fabricating High‐Resolution and Very Small Pixel‐pitch GaN LED Microdisplays

A new approach for fabricating very‐small pixel pitch GaN microdisplays is proposed. MicroLEDS obtained from silicon grown epi GaN layers exhibit performances comparable to those obtained on classical sapphire templates. This technology shows very great promises in the fabrication of high brightness...

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Veröffentlicht in:	SID International Symposium Digest of technical papers 2017-05, Vol.48 (1), p.268-271
Hauptverfasser:	Templier, François, Benaïssa, Lamine, Aventurier, Bernard, Nardo, Christine Di, Charles, Matthew, Daami, Anis, Henry, Franck, Dupré, Ludovic
Format:	Artikel
Sprache:	eng
Schlagworte:	Augmented reality Brightness Displays Gallium nitrides GaN High resolution Light emitting diodes MicroLED - Brightness Sapphire Silicon
Online-Zugang:	Volltext
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